MX2010000954A - Sistema y metodo para reducir el consumo de potencia ram dinamica mediante el uso de indicadores de datos validos. - Google Patents

Sistema y metodo para reducir el consumo de potencia ram dinamica mediante el uso de indicadores de datos validos.

Info

Publication number
MX2010000954A
MX2010000954A MX2010000954A MX2010000954A MX2010000954A MX 2010000954 A MX2010000954 A MX 2010000954A MX 2010000954 A MX2010000954 A MX 2010000954A MX 2010000954 A MX2010000954 A MX 2010000954A MX 2010000954 A MX2010000954 A MX 2010000954A
Authority
MX
Mexico
Prior art keywords
valid data
power consumption
dynamic ram
reduce dynamic
consumption via
Prior art date
Application number
MX2010000954A
Other languages
English (en)
Spanish (es)
Inventor
Gerald Paul Michalak
Barry Joe Wolford
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of MX2010000954A publication Critical patent/MX2010000954A/es

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406Management or control of the refreshing or charge-regeneration cycles
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40622Partial refresh of memory arrays
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4072Circuits for initialization, powering up or down, clearing memory or presetting
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409Read-write [R-W] circuits 
    • G11C11/4093Input/output [I/O] data interface arrangements, e.g. data buffers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C2211/00Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/406Refreshing of dynamic cells
    • G11C2211/4065Low level details of refresh operations

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Power Sources (AREA)
  • Memory System (AREA)
MX2010000954A 2007-07-26 2008-07-25 Sistema y metodo para reducir el consumo de potencia ram dinamica mediante el uso de indicadores de datos validos. MX2010000954A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/828,569 US7590021B2 (en) 2007-07-26 2007-07-26 System and method to reduce dynamic RAM power consumption via the use of valid data indicators
PCT/US2008/071153 WO2009015324A1 (en) 2007-07-26 2008-07-25 System and method to reduce dynamic ram power consumption via the use of valid data indicators

Publications (1)

Publication Number Publication Date
MX2010000954A true MX2010000954A (es) 2010-03-10

Family

ID=39862963

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2010000954A MX2010000954A (es) 2007-07-26 2008-07-25 Sistema y metodo para reducir el consumo de potencia ram dinamica mediante el uso de indicadores de datos validos.

Country Status (12)

Country Link
US (1) US7590021B2 (enExample)
EP (1) EP2020659B1 (enExample)
JP (2) JP2010534897A (enExample)
KR (1) KR101107798B1 (enExample)
CN (1) CN101765887A (enExample)
AT (1) ATE528763T1 (enExample)
BR (1) BRPI0814590A8 (enExample)
CA (1) CA2693811C (enExample)
ES (1) ES2375230T3 (enExample)
MX (1) MX2010000954A (enExample)
RU (1) RU2435237C1 (enExample)
WO (1) WO2009015324A1 (enExample)

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US9411674B2 (en) * 2010-03-19 2016-08-09 Microsoft Technology Licensing, Llc Providing hardware resources having different reliabilities for use by an application
US8412882B2 (en) 2010-06-18 2013-04-02 Microsoft Corporation Leveraging chip variability
CA2813096C (en) 2010-09-30 2019-10-29 Chiesi Farmaceutici S.P.A. Use of magnesium stearate in dry powder formulations for inhalation
WO2012074724A1 (en) 2010-12-03 2012-06-07 Rambus Inc. Memory refresh method and devices
KR102481494B1 (ko) 2011-12-22 2022-12-26 아이씨유 메디칼 인코퍼레이티드 의료용 유체 전달 시스템, 유체 전달 방법, 전자 의료용 유체 전달 시스템, 및 전자 의료용 유체 전달 시스템 이용 방법
EP2620838B1 (en) 2012-01-26 2015-04-22 ST-Ericsson SA Automatic partial array self-refresh
CN108231109B (zh) 2014-06-09 2021-01-29 华为技术有限公司 动态随机存取存储器dram的刷新方法、设备以及系统
US20160155491A1 (en) * 2014-11-27 2016-06-02 Advanced Micro Devices, Inc. Memory persistence management control
KR102373544B1 (ko) 2015-11-06 2022-03-11 삼성전자주식회사 요청 기반의 리프레쉬를 수행하는 메모리 장치, 메모리 시스템 및 메모리 장치의 동작방법
EP4534065A3 (en) 2015-12-04 2025-06-04 ICU Medical, Inc. Systems methods and components for transferring medical fluids
US9972375B2 (en) * 2016-04-15 2018-05-15 Via Alliance Semiconductor Co., Ltd. Sanitize-aware DRAM controller
USD851745S1 (en) 2016-07-19 2019-06-18 Icu Medical, Inc. Medical fluid transfer system
JP6765941B2 (ja) * 2016-11-22 2020-10-07 理想科学工業株式会社 半導体メモリ管理装置
US10437499B2 (en) * 2017-12-22 2019-10-08 Nanya Technology Corporation Hybrid memory system and method of operating the same
US10762946B2 (en) 2018-12-31 2020-09-01 Micron Technology, Inc. Memory with partial array refresh
US10811076B1 (en) 2019-06-29 2020-10-20 Intel Corporation Battery life based on inhibited memory refreshes
US11721384B2 (en) * 2020-04-17 2023-08-08 Advanced Micro Devices, Inc. Hardware-assisted dynamic random access memory (DRAM) row merging
KR20240059151A (ko) 2022-10-27 2024-05-07 삼성전자주식회사 메모리 장치, 그것을 포함하는 메모리 시스템 및 그것의 동작 방법

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Also Published As

Publication number Publication date
EP2020659A1 (en) 2009-02-04
JP2014197446A (ja) 2014-10-16
KR101107798B1 (ko) 2012-01-25
US20090027989A1 (en) 2009-01-29
JP2010534897A (ja) 2010-11-11
RU2435237C1 (ru) 2011-11-27
ES2375230T3 (es) 2012-02-27
US7590021B2 (en) 2009-09-15
KR20100047286A (ko) 2010-05-07
BRPI0814590A2 (pt) 2015-01-20
CA2693811A1 (en) 2009-01-29
EP2020659B1 (en) 2011-10-12
ATE528763T1 (de) 2011-10-15
CA2693811C (en) 2013-11-12
RU2010107059A (ru) 2011-09-10
BRPI0814590A8 (pt) 2019-01-02
WO2009015324A1 (en) 2009-01-29
CN101765887A (zh) 2010-06-30

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