KR101107798B1 - 유효 데이터 표시자들의 사용을 통해 동적 ｒａｍ 전력 소비를 감소시키기 위한 시스템 및 방법 - Google Patents

유효 데이터 표시자들의 사용을 통해 동적 ｒａｍ 전력 소비를 감소시키기 위한 시스템 및 방법 Download PDF

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Publication number
KR101107798B1
KR101107798B1 KR1020107004191A KR20107004191A KR101107798B1 KR 101107798 B1 KR101107798 B1 KR 101107798B1 KR 1020107004191 A KR1020107004191 A KR 1020107004191A KR 20107004191 A KR20107004191 A KR 20107004191A KR 101107798 B1 KR101107798 B1 KR 101107798B1
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South Korea
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memory
refresh
independently refreshable
indicator
valid data
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English (en)
Korean (ko)
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KR20100047286A (ko
Inventor
제랄드 폴 미찰락
배리 조 울포드
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콸콤 인코포레이티드
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40622—Partial refresh of memory arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4072—Circuits for initialization, powering up or down, clearing memory or presetting
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/406—Refreshing of dynamic cells
    • G11C2211/4065—Low level details of refresh operations

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Power Sources (AREA)
  • Memory System (AREA)
KR1020107004191A 2007-07-26 2008-07-25 유효 데이터 표시자들의 사용을 통해 동적 ｒａｍ 전력 소비를 감소시키기 위한 시스템 및 방법 Expired - Fee Related KR101107798B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/828,569 2007-07-26
US11/828,569 US7590021B2 (en) 2007-07-26 2007-07-26 System and method to reduce dynamic RAM power consumption via the use of valid data indicators
PCT/US2008/071153 WO2009015324A1 (en) 2007-07-26 2008-07-25 System and method to reduce dynamic ram power consumption via the use of valid data indicators

Publications (2)

Publication Number Publication Date
KR20100047286A KR20100047286A (ko) 2010-05-07
KR101107798B1 true KR101107798B1 (ko) 2012-01-25

Family

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Application Number Title Priority Date Filing Date
KR1020107004191A Expired - Fee Related KR101107798B1 (ko) 2007-07-26 2008-07-25 유효 데이터 표시자들의 사용을 통해 동적 ｒａｍ 전력 소비를 감소시키기 위한 시스템 및 방법

Country Status (12)

Country Link
US (1) US7590021B2 (enExample)
EP (1) EP2020659B1 (enExample)
JP (2) JP2010534897A (enExample)
KR (1) KR101107798B1 (enExample)
CN (1) CN101765887A (enExample)
AT (1) ATE528763T1 (enExample)
BR (1) BRPI0814590A8 (enExample)
CA (1) CA2693811C (enExample)
ES (1) ES2375230T3 (enExample)
MX (1) MX2010000954A (enExample)
RU (1) RU2435237C1 (enExample)
WO (1) WO2009015324A1 (enExample)

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CA3068441C (en) 2009-07-29 2024-01-09 Icu Medical, Inc. Fluid transfer devices and methods of use
US9411674B2 (en) * 2010-03-19 2016-08-09 Microsoft Technology Licensing, Llc Providing hardware resources having different reliabilities for use by an application
US8412882B2 (en) 2010-06-18 2013-04-02 Microsoft Corporation Leveraging chip variability
CA2813096C (en) 2010-09-30 2019-10-29 Chiesi Farmaceutici S.P.A. Use of magnesium stearate in dry powder formulations for inhalation
WO2012074724A1 (en) 2010-12-03 2012-06-07 Rambus Inc. Memory refresh method and devices
KR102481494B1 (ko) 2011-12-22 2022-12-26 아이씨유 메디칼 인코퍼레이티드 의료용 유체 전달 시스템, 유체 전달 방법, 전자 의료용 유체 전달 시스템, 및 전자 의료용 유체 전달 시스템 이용 방법
EP2620838B1 (en) 2012-01-26 2015-04-22 ST-Ericsson SA Automatic partial array self-refresh
CN108231109B (zh) 2014-06-09 2021-01-29 华为技术有限公司 动态随机存取存储器dram的刷新方法、设备以及系统
US20160155491A1 (en) * 2014-11-27 2016-06-02 Advanced Micro Devices, Inc. Memory persistence management control
KR102373544B1 (ko) 2015-11-06 2022-03-11 삼성전자주식회사 요청 기반의 리프레쉬를 수행하는 메모리 장치, 메모리 시스템 및 메모리 장치의 동작방법
EP4534065A3 (en) 2015-12-04 2025-06-04 ICU Medical, Inc. Systems methods and components for transferring medical fluids
US9972375B2 (en) * 2016-04-15 2018-05-15 Via Alliance Semiconductor Co., Ltd. Sanitize-aware DRAM controller
USD851745S1 (en) 2016-07-19 2019-06-18 Icu Medical, Inc. Medical fluid transfer system
JP6765941B2 (ja) * 2016-11-22 2020-10-07 理想科学工業株式会社 半導体メモリ管理装置
US10437499B2 (en) * 2017-12-22 2019-10-08 Nanya Technology Corporation Hybrid memory system and method of operating the same
US10762946B2 (en) 2018-12-31 2020-09-01 Micron Technology, Inc. Memory with partial array refresh
US10811076B1 (en) 2019-06-29 2020-10-20 Intel Corporation Battery life based on inhibited memory refreshes
US11721384B2 (en) * 2020-04-17 2023-08-08 Advanced Micro Devices, Inc. Hardware-assisted dynamic random access memory (DRAM) row merging
KR20240059151A (ko) 2022-10-27 2024-05-07 삼성전자주식회사 메모리 장치, 그것을 포함하는 메모리 시스템 및 그것의 동작 방법

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US20030023825A1 (en) * 2001-07-30 2003-01-30 Woo Steven C Consolidation of allocated memory to reduce power consumption

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Also Published As

Publication number Publication date
EP2020659A1 (en) 2009-02-04
JP2014197446A (ja) 2014-10-16
US20090027989A1 (en) 2009-01-29
JP2010534897A (ja) 2010-11-11
RU2435237C1 (ru) 2011-11-27
ES2375230T3 (es) 2012-02-27
US7590021B2 (en) 2009-09-15
KR20100047286A (ko) 2010-05-07
BRPI0814590A2 (pt) 2015-01-20
CA2693811A1 (en) 2009-01-29
EP2020659B1 (en) 2011-10-12
MX2010000954A (es) 2010-03-10
ATE528763T1 (de) 2011-10-15
CA2693811C (en) 2013-11-12
RU2010107059A (ru) 2011-09-10
BRPI0814590A8 (pt) 2019-01-02
WO2009015324A1 (en) 2009-01-29
CN101765887A (zh) 2010-06-30

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