ATE528763T1 - System und verfahren zur verringerung des dynamischen ram-energieverbrauchs durch verwenden von gültigen datenmarkern - Google Patents

System und verfahren zur verringerung des dynamischen ram-energieverbrauchs durch verwenden von gültigen datenmarkern

Info

Publication number
ATE528763T1
ATE528763T1 AT08005492T AT08005492T ATE528763T1 AT E528763 T1 ATE528763 T1 AT E528763T1 AT 08005492 T AT08005492 T AT 08005492T AT 08005492 T AT08005492 T AT 08005492T AT E528763 T1 ATE528763 T1 AT E528763T1
Authority
AT
Austria
Prior art keywords
valid data
energy consumption
dynamic ram
data markers
reducing dynamic
Prior art date
Application number
AT08005492T
Other languages
English (en)
Inventor
Gerald Paul Michalak
Barry Joe Wolford
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Application granted granted Critical
Publication of ATE528763T1 publication Critical patent/ATE528763T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40622—Partial refresh of memory arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4072—Circuits for initialization, powering up or down, clearing memory or presetting
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/406—Refreshing of dynamic cells
    • G11C2211/4065—Low level details of refresh operations
AT08005492T 2007-07-26 2008-03-25 System und verfahren zur verringerung des dynamischen ram-energieverbrauchs durch verwenden von gültigen datenmarkern ATE528763T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/828,569 US7590021B2 (en) 2007-07-26 2007-07-26 System and method to reduce dynamic RAM power consumption via the use of valid data indicators

Publications (1)

Publication Number Publication Date
ATE528763T1 true ATE528763T1 (de) 2011-10-15

Family

ID=39862963

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08005492T ATE528763T1 (de) 2007-07-26 2008-03-25 System und verfahren zur verringerung des dynamischen ram-energieverbrauchs durch verwenden von gültigen datenmarkern

Country Status (12)

Country Link
US (1) US7590021B2 (de)
EP (1) EP2020659B1 (de)
JP (2) JP2010534897A (de)
KR (1) KR101107798B1 (de)
CN (1) CN101765887A (de)
AT (1) ATE528763T1 (de)
BR (1) BRPI0814590A8 (de)
CA (1) CA2693811C (de)
ES (1) ES2375230T3 (de)
MX (1) MX2010000954A (de)
RU (1) RU2435237C1 (de)
WO (1) WO2009015324A1 (de)

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EP2459146B1 (de) 2009-07-29 2020-04-29 ICU Medical, Inc. Flüssigkeitsübertragungsverfahren
US9411674B2 (en) * 2010-03-19 2016-08-09 Microsoft Technology Licensing, Llc Providing hardware resources having different reliabilities for use by an application
US8412882B2 (en) 2010-06-18 2013-04-02 Microsoft Corporation Leveraging chip variability
ES2704688T3 (es) 2010-09-30 2019-03-19 Chiesi Farm Spa Uso de estearato de magnesio en formulaciones de polvo seco para inhalación
WO2012074724A1 (en) 2010-12-03 2012-06-07 Rambus Inc. Memory refresh method and devices
AU2012324021A1 (en) 2011-12-22 2013-07-11 Icu Medical, Inc. Fluid transfer devices and methods of use
EP2620838B1 (de) * 2012-01-26 2015-04-22 ST-Ericsson SA Automatische, partielle Array-Selbstauffrischung
CN105280215B (zh) 2014-06-09 2018-01-23 华为技术有限公司 动态随机存取存储器dram的刷新方法、设备以及系统
US20160155491A1 (en) * 2014-11-27 2016-06-02 Advanced Micro Devices, Inc. Memory persistence management control
KR102373544B1 (ko) 2015-11-06 2022-03-11 삼성전자주식회사 요청 기반의 리프레쉬를 수행하는 메모리 장치, 메모리 시스템 및 메모리 장치의 동작방법
AU2016365335B2 (en) 2015-12-04 2021-10-21 Icu Medical, Inc. Systems methods and components for transferring medical fluids
US9972375B2 (en) * 2016-04-15 2018-05-15 Via Alliance Semiconductor Co., Ltd. Sanitize-aware DRAM controller
USD851745S1 (en) 2016-07-19 2019-06-18 Icu Medical, Inc. Medical fluid transfer system
JP6765941B2 (ja) * 2016-11-22 2020-10-07 理想科学工業株式会社 半導体メモリ管理装置
US10437499B2 (en) * 2017-12-22 2019-10-08 Nanya Technology Corporation Hybrid memory system and method of operating the same
US10762946B2 (en) * 2018-12-31 2020-09-01 Micron Technology, Inc. Memory with partial array refresh
US10811076B1 (en) * 2019-06-29 2020-10-20 Intel Corporation Battery life based on inhibited memory refreshes

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JPH09312094A (ja) * 1996-05-23 1997-12-02 Nec Eng Ltd リフレッシュ制御システム
JPH10177786A (ja) * 1996-12-16 1998-06-30 Nec Shizuoka Ltd メモリリフレッシュ制御装置および方法
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JP2001243767A (ja) * 2000-02-25 2001-09-07 Nec Microsystems Ltd 揮発性メモリを用いたｆｉｆｏメモリ
JP2002373489A (ja) 2001-06-15 2002-12-26 Mitsubishi Electric Corp 半導体記憶装置
US6742097B2 (en) 2001-07-30 2004-05-25 Rambus Inc. Consolidation of allocated memory to reduce power consumption
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Also Published As

Publication number Publication date
CA2693811A1 (en) 2009-01-29
EP2020659B1 (de) 2011-10-12
RU2435237C1 (ru) 2011-11-27
BRPI0814590A2 (pt) 2015-01-20
US7590021B2 (en) 2009-09-15
EP2020659A1 (de) 2009-02-04
KR101107798B1 (ko) 2012-01-25
BRPI0814590A8 (pt) 2019-01-02
ES2375230T3 (es) 2012-02-27
JP2010534897A (ja) 2010-11-11
JP2014197446A (ja) 2014-10-16
MX2010000954A (es) 2010-03-10
CA2693811C (en) 2013-11-12
US20090027989A1 (en) 2009-01-29
CN101765887A (zh) 2010-06-30
RU2010107059A (ru) 2011-09-10
KR20100047286A (ko) 2010-05-07
WO2009015324A1 (en) 2009-01-29

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