RU2016101945A - Способ получения соединений алкоксида индия, соединения алкоксида индия, получаемые согласно способу, и их применение - Google Patents
Способ получения соединений алкоксида индия, соединения алкоксида индия, получаемые согласно способу, и их применение Download PDFInfo
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- RU2016101945A RU2016101945A RU2016101945A RU2016101945A RU2016101945A RU 2016101945 A RU2016101945 A RU 2016101945A RU 2016101945 A RU2016101945 A RU 2016101945A RU 2016101945 A RU2016101945 A RU 2016101945A RU 2016101945 A RU2016101945 A RU 2016101945A
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- Russia
- Prior art keywords
- indium
- compounds
- alkyl
- indocycle
- trihalide
- Prior art date
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- 150000001875 compounds Chemical class 0.000 title claims 8
- 238000000034 method Methods 0.000 title claims 8
- 238000004519 manufacturing process Methods 0.000 title claims 2
- 229910052738 indium Inorganic materials 0.000 claims 10
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 6
- 125000000217 alkyl group Chemical group 0.000 claims 5
- -1 indium alkoxide Chemical class 0.000 claims 4
- 125000000467 secondary amino group Chemical class [H]N([*:1])[*:2] 0.000 claims 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims 3
- 150000001768 cations Chemical class 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 1
- 125000005265 dialkylamine group Chemical group 0.000 claims 1
- 229910003437 indium oxide Inorganic materials 0.000 claims 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 239000011541 reaction mixture Substances 0.000 claims 1
- 239000002904 solvent Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C07F5/003—Compounds containing elements of Groups 3 or 13 of the Periodic Table without C-Metal linkages
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1216—Metal oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1291—Process of deposition of the inorganic material by heating of the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
- C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Thermal Sciences (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Claims (23)
1. Соединение алкоксида индия,
получаемое путем реакции
тригалогенида индия InX3 ,где X = F, Cl, Br, I,
со вторичным амином формулы R‘2NH, где R‘ = алкил,
в молярном соотношении от 8:1 до 20:1 по отношению к тригалогениду индия,
в присутствии спирта общей формулы ROH, где R = алкил.
2. Соединение алкоксида индия по п. 1, отличающееся тем, что оно может быть получено способом, при котором вторичный амин присутствует в молярном соотношении от 8:1 до 15:1, предпочтительно от 8:1 до 12:1, по отношению к тригалогениду индия.
3. Соединение общей формулы
[In6(O)(OR)12X6]2-Am z (ROH)x,
где R = алкил, X = F, Cl, Br, I, A = катион, z = валентность катиона, m∙z = 2, и x = 0-10.
4. Соединение по п. 3, отличающееся тем, что оно имеет общую формулу [In6(O)(OMe)12Cl6]2-[NH2R2]+ 2 (MeOH)2.
5. Способ получения соединений алкоксида индия, при котором
обеспечивают реагирование тригалогенида индия InX3, где X = F, Cl, Br, I,
со вторичным амином формулы R'2NH, где R' = алкил,
в молярном соотношении от 8:1 до 20:1 по отношению к тригалогениду индия,
в присутствии спирта общей формулы ROH, где R = алкил.
6. Способ по п. 5, отличающийся тем, что молярное соотношение составляет от 8:1 до 15:1, предпочтительно от 8:1 до 12:1.
7. Способ по п. 6, отличающийся тем, что вначале загружают тригалогенид индия в спирт ROH и добавляют вторичный амин в газообразном виде, в жидком виде или растворенным в растворителе.
8. Способ по п. 7, отличающийся тем, что добавляют диалкиламин со скоростью от 0,5 до 5 моль в час на моль InX3.
9. Способ по п. 8, отличающийся тем, что реакционную смесь после добавления всех компонентов нагревают до температуры от 40 до 70°C в течение периода от 1 до 10 ч.
10. Способ по любому из пп. 5-9, отличающийся тем, что образованное соединение алкоксида индия отделяют от других составляющих реакционной композиции и перекристаллизовывают.
11. Применение соединения по любому из пп. 1-4 для получения содержащих оксид индия покрытий.
12. Применение соединения по любому из пп. 1-4 для получения полупроводящих или проводящих слоев для электронных компонентов, в частности, для производства тонкопленочных транзисторов, диодов или солнечных элементов.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102013212017.6A DE102013212017A1 (de) | 2013-06-25 | 2013-06-25 | Verfahren zur Herstellung von Indiumalkoxid-Verbindungen, die nach dem Verfahren herstellbaren Indiumalkoxid-Verbindungen und ihre Verwendung |
| DE102013212017.6 | 2013-06-25 | ||
| PCT/EP2014/059957 WO2014206634A1 (de) | 2013-06-25 | 2014-05-15 | Verfahren zur herstellung von indiumalkoxid-verbindungen, die nach dem verfahren herstellbaren indiumalkoxid-verbindungen und ihre verwendung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| RU2016101945A true RU2016101945A (ru) | 2017-07-28 |
| RU2656103C2 RU2656103C2 (ru) | 2018-05-31 |
Family
ID=50792427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2016101945A RU2656103C2 (ru) | 2013-06-25 | 2014-05-15 | Способ получения соединений алкоксида индия, соединения алкоксида индия, получаемые согласно способу, и их применение |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US9802964B2 (ru) |
| EP (1) | EP3013838B1 (ru) |
| JP (1) | JP6373373B2 (ru) |
| KR (1) | KR102141350B1 (ru) |
| CN (1) | CN105492447B (ru) |
| DE (1) | DE102013212017A1 (ru) |
| RU (1) | RU2656103C2 (ru) |
| TW (1) | TWI632150B (ru) |
| WO (1) | WO2014206634A1 (ru) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102013212019A1 (de) | 2013-06-25 | 2015-01-08 | Evonik Industries Ag | Formulierungen zur Herstellung Indiumoxid-haltiger Schichten, Verfahren zu ihrer Herstellung und ihre Verwendung |
| CN112480906A (zh) * | 2020-11-24 | 2021-03-12 | 苏州星烁纳米科技有限公司 | 一种铟氧簇合物及其制备方法、由其制备的量子点及该量子点的制备方法 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63243091A (ja) * | 1985-04-22 | 1988-10-07 | ストウフア− ケミカル カンパニ− | 金属アルコキシドの製法 |
| FR2659649B1 (fr) * | 1990-03-16 | 1992-06-12 | Kodak Pathe | Preparation d'alkoxydes d'indium solubles dans les solvants organiques. |
| JP2831431B2 (ja) * | 1990-04-10 | 1998-12-02 | 株式会社ジャパンエナジー | 高純度金属アルコキサイドの製造方法 |
| JPH07258277A (ja) * | 1994-03-25 | 1995-10-09 | Kooriyama Kasei Kk | スズ（ｉｖ）テトラアルコキシドからハロゲンを除去する方法 |
| AUPP027497A0 (en) * | 1997-11-07 | 1997-12-04 | Sustainable Technologies Australia Limited | Preparation of metal alkoxides |
| RU2181389C2 (ru) * | 1999-06-29 | 2002-04-20 | Омский научно-исследовательский институт приборостроения | Способ получения прозрачной электропроводящей пленки на основе оксидов индия и олова |
| KR100627631B1 (ko) * | 2005-02-18 | 2006-09-25 | 한국화학연구원 | 휘발성 인듐 아미노 알콕사이드 화합물 및 그 제조 방법 |
| GB2454019B (en) * | 2007-10-27 | 2011-11-09 | Multivalent Ltd | Improvements in or relating to synthesis of gallium and indium alkoxides |
| DE102009009338A1 (de) | 2009-02-17 | 2010-08-26 | Evonik Degussa Gmbh | Indiumalkoxid-haltige Zusammensetzungen, Verfahren zu ihrer Herstellung und ihre Verwendung |
| DE102009009337A1 (de) | 2009-02-17 | 2010-08-19 | Evonik Degussa Gmbh | Verfahren zur Herstellung halbleitender Indiumoxid-Schichten, nach dem Verfahren hergestellte Indiumoxid-Schichten und deren Verwendung |
| DE102009028801B3 (de) | 2009-08-21 | 2011-04-14 | Evonik Degussa Gmbh | Verfahren zur Herstellung Indiumoxid-haltiger Schichten, nach dem Verfahren herstellbare Indiumoxid-haltige Schicht und deren Verwendung |
| TWI395730B (zh) * | 2009-11-13 | 2013-05-11 | Univ Nat Kaohsiung Applied Sci | Indium tin oxide compound coating liquid and its manufacturing method and application |
| DE102009054998A1 (de) | 2009-12-18 | 2011-06-22 | Evonik Degussa GmbH, 45128 | Verfahren zur Herstellung von Indiumchlordialkoxiden |
| DE102009054997B3 (de) | 2009-12-18 | 2011-06-01 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung |
| DE102010031592A1 (de) | 2010-07-21 | 2012-01-26 | Evonik Degussa Gmbh | Indiumoxoalkoxide für die Herstellung Indiumoxid-haltiger Schichten |
| DE102010031895A1 (de) | 2010-07-21 | 2012-01-26 | Evonik Degussa Gmbh | Indiumoxoalkoxide für die Herstellung Indiumoxid-haltiger Schichten |
| DE102010043668B4 (de) | 2010-11-10 | 2012-06-21 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung |
| DE102012209918A1 (de) | 2012-06-13 | 2013-12-19 | Evonik Industries Ag | Verfahren zur Herstellung Indiumoxid-haltiger Schichten |
| JP6246225B2 (ja) * | 2012-11-14 | 2017-12-13 | チエン・マイ・ユニバーシティＣｈｉａｎｇ Ｍａｉ Ｕｎｉｖｅｒｓｉｔｙ | 液状スズ（ｉｉ）アルコキシドの製造方法 |
| DE102013212019A1 (de) | 2013-06-25 | 2015-01-08 | Evonik Industries Ag | Formulierungen zur Herstellung Indiumoxid-haltiger Schichten, Verfahren zu ihrer Herstellung und ihre Verwendung |
-
2013
- 2013-06-25 DE DE102013212017.6A patent/DE102013212017A1/de not_active Withdrawn
-
2014
- 2014-05-15 RU RU2016101945A patent/RU2656103C2/ru not_active IP Right Cessation
- 2014-05-15 US US14/900,936 patent/US9802964B2/en active Active
- 2014-05-15 KR KR1020167001938A patent/KR102141350B1/ko active IP Right Grant
- 2014-05-15 JP JP2016522352A patent/JP6373373B2/ja not_active Expired - Fee Related
- 2014-05-15 WO PCT/EP2014/059957 patent/WO2014206634A1/de active Application Filing
- 2014-05-15 CN CN201480036888.2A patent/CN105492447B/zh not_active Expired - Fee Related
- 2014-05-15 EP EP14726113.5A patent/EP3013838B1/de not_active Not-in-force
- 2014-06-23 TW TW103121565A patent/TWI632150B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP2016530225A (ja) | 2016-09-29 |
| US9802964B2 (en) | 2017-10-31 |
| KR20160024388A (ko) | 2016-03-04 |
| CN105492447A (zh) | 2016-04-13 |
| RU2656103C2 (ru) | 2018-05-31 |
| TW201518309A (zh) | 2015-05-16 |
| JP6373373B2 (ja) | 2018-08-15 |
| EP3013838B1 (de) | 2017-05-10 |
| EP3013838A1 (de) | 2016-05-04 |
| CN105492447B (zh) | 2019-09-10 |
| DE102013212017A1 (de) | 2015-01-08 |
| KR102141350B1 (ko) | 2020-08-06 |
| US20160159824A1 (en) | 2016-06-09 |
| WO2014206634A1 (de) | 2014-12-31 |
| TWI632150B (zh) | 2018-08-11 |
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