RU2015104902A - Композиция, используемая в изготовлении интегральных схем, оптических устройств, микромашин и механических прецизионных устройств - Google Patents

Композиция, используемая в изготовлении интегральных схем, оптических устройств, микромашин и механических прецизионных устройств Download PDF

Info

Publication number
RU2015104902A
RU2015104902A RU2015104902A RU2015104902A RU2015104902A RU 2015104902 A RU2015104902 A RU 2015104902A RU 2015104902 A RU2015104902 A RU 2015104902A RU 2015104902 A RU2015104902 A RU 2015104902A RU 2015104902 A RU2015104902 A RU 2015104902A
Authority
RU
Russia
Prior art keywords
independently selected
aqueous composition
alkyl
composition according
optionally
Prior art date
Application number
RU2015104902A
Other languages
English (en)
Russian (ru)
Inventor
Андреас КЛИПП
Андрей ХОНЧУК
ПАНЧЕРА Забрина МОНТЕРО
Золтан БААН
Original Assignee
Басф Се
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Басф Се filed Critical Басф Се
Publication of RU2015104902A publication Critical patent/RU2015104902A/ru

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/32Liquid compositions therefor, e.g. developers
    • G03F7/322Aqueous alkaline compositions
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/32Liquid compositions therefor, e.g. developers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2041Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
RU2015104902A 2012-07-16 2013-07-12 Композиция, используемая в изготовлении интегральных схем, оптических устройств, микромашин и механических прецизионных устройств RU2015104902A (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261671806P 2012-07-16 2012-07-16
US61/671806 2012-07-16
PCT/IB2013/055728 WO2014013396A2 (en) 2012-07-16 2013-07-12 Composition for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices

Publications (1)

Publication Number Publication Date
RU2015104902A true RU2015104902A (ru) 2016-09-10

Family

ID=49949313

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2015104902A RU2015104902A (ru) 2012-07-16 2013-07-12 Композиция, используемая в изготовлении интегральных схем, оптических устройств, микромашин и механических прецизионных устройств

Country Status (11)

Country Link
US (1) US20150192854A1 (https=)
EP (1) EP2875406A4 (https=)
JP (1) JP6328630B2 (https=)
KR (1) KR102107370B1 (https=)
CN (1) CN104471487B (https=)
IL (1) IL236457B (https=)
MY (1) MY171072A (https=)
RU (1) RU2015104902A (https=)
SG (1) SG11201500235XA (https=)
TW (1) TWI665177B (https=)
WO (1) WO2014013396A2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015028576A (ja) * 2013-07-01 2015-02-12 富士フイルム株式会社 パターン形成方法
KR102374206B1 (ko) 2017-12-05 2022-03-14 삼성전자주식회사 반도체 장치 제조 방법
US12518960B2 (en) * 2020-07-09 2026-01-06 Basf Se Composition comprising a siloxane and an alkane for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 NM or below

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4628023A (en) * 1981-04-10 1986-12-09 Shipley Company Inc. Metal ion free photoresist developer composition with lower alkyl quaternary ammonium hydrozide as alkalai agent and a quaternary ammonium compound as surfactant
JP3707856B2 (ja) * 1996-03-07 2005-10-19 富士通株式会社 レジストパターンの形成方法
KR19990037527A (ko) * 1997-10-31 1999-05-25 후지쯔 가부시끼가이샤 폴리이미드계 감광성 수지조성물용 현상액
JPH11218932A (ja) * 1997-10-31 1999-08-10 Nippon Zeon Co Ltd ポリイミド系感光性樹脂組成物用現像液
JP4265741B2 (ja) * 2003-02-28 2009-05-20 日本カーリット株式会社 レジスト剥離剤
JP3993549B2 (ja) * 2003-09-30 2007-10-17 株式会社東芝 レジストパターン形成方法
US7157213B2 (en) * 2004-03-01 2007-01-02 Think Laboratory Co., Ltd. Developer agent for positive type photosensitive compound
US8808976B2 (en) * 2005-06-13 2014-08-19 Tokuyama Corporation Photoresist developer and method for fabricating substrate by using the developer thereof
JP5206304B2 (ja) * 2008-10-15 2013-06-12 東ソー株式会社 第四級アンモニウム塩の回収方法
US8772547B2 (en) * 2009-03-12 2014-07-08 Basf Se Method for producing 1-adamantyl trimethylammonium hydroxide
JP5836932B2 (ja) * 2009-05-07 2015-12-24 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se レジストストリッピング組成物及び電気装置を製造するための方法
TWI474378B (zh) * 2009-06-26 2015-02-21 羅門哈斯電子材料有限公司 形成電子裝置的方法
CN101993377A (zh) * 2009-08-07 2011-03-30 出光兴产株式会社 具有金刚烷骨架的胺类和季铵盐的制造方法
JP2011145557A (ja) * 2010-01-15 2011-07-28 Tokyo Ohka Kogyo Co Ltd フォトリソグラフィ用現像液
JP6213296B2 (ja) * 2013-04-10 2017-10-18 信越化学工業株式会社 現像液を用いたパターン形成方法

Also Published As

Publication number Publication date
CN104471487B (zh) 2019-07-09
JP6328630B2 (ja) 2018-05-23
WO2014013396A2 (en) 2014-01-23
SG11201500235XA (en) 2015-02-27
KR102107370B1 (ko) 2020-05-07
EP2875406A2 (en) 2015-05-27
WO2014013396A3 (en) 2014-03-06
TWI665177B (zh) 2019-07-11
IL236457B (en) 2020-04-30
TW201425279A (zh) 2014-07-01
KR20150042796A (ko) 2015-04-21
CN104471487A (zh) 2015-03-25
EP2875406A4 (en) 2016-11-09
IL236457A0 (en) 2015-02-26
MY171072A (en) 2019-09-24
US20150192854A1 (en) 2015-07-09
JP2015524577A (ja) 2015-08-24

Similar Documents

Publication Publication Date Title
RU2013139216A (ru) ПРИМЕНЕНИЕ ПОВЕРХНОСТНО-АКТИВНЫХ ВЕЩЕСТВ, СОДЕРЖАЩИХ ПО МЕНЬШЕЙ МЕРЕ ТРИ КОРОТКОЦЕПОЧЕЧНЫЕ ПЕРФТОРИРОВАННЫЕ ГРУППЫ, ДЛЯ ПРОИЗВОДСТВА МИКРОСХЕМ, ИМЕЮЩИХ РИСУНКИ С РАССТОЯНИЯМИ МЕЖДУ ЛИНИЯМИ МЕНЕЕ 50 нм
CN101303525B (zh) 一种双重图形曝光工艺
RU2015104902A (ru) Композиция, используемая в изготовлении интегральных схем, оптических устройств, микромашин и механических прецизионных устройств
JP5768074B2 (ja) パターン形成方法
WO2016200626A1 (en) Vertical and planar tfts on common substrate
CN109696797A (zh) Lele双重图形工艺方法
KR20210016274A (ko) 접착력이 향상된 반도체 구조물의 패터닝 공정
US9159559B2 (en) Lithography layer with quenchers to prevent pattern collapse
CN104375387B (zh) 用于在发射辐射的半导体器件中制造结构的光刻方法
US9123815B1 (en) VTFTs including offset electrodes
EP2230552A3 (en) Method for forming fine pattern in semiconductor device
JP2015524577A5 (https=)
JP6832727B2 (ja) 化合物、パターン形成用基板、光分解性カップリング剤、パターン形成方法及びトランジスタの製造方法
WO2015134092A1 (en) Vtft including overlapping electrodes
US9153698B2 (en) VTFT with gate aligned to vertical structure
CN106068567B (zh) 具有聚合物芯的vtft
US9093470B1 (en) VTFT formation using capillary action
US9178029B2 (en) Forming a VTFT gate using printing
US9331205B2 (en) VTFT with post, cap, and aligned gate
KR102571754B1 (ko) 금속 칼코겐 화합물을 포함하는 포토레지스트 조성물 및 이를 이용한 패턴 형성 방법
US20150255625A1 (en) Offset independently operable vtft electrodes
US20140038089A1 (en) Self-polarized mask and self-polarized mask application
US9142647B1 (en) VTFT formation using selective area deposition
US9153445B2 (en) Forming a VTFT with aligned gate
RU2011120451A (ru) Способ и оборудование для формирования электронного устройства

Legal Events

Date Code Title Description
FA92 Acknowledgement of application withdrawn (lack of supplementary materials submitted)

Effective date: 20171020