JP6328630B2 - フォトレジスト現像用組成物、組成物の使用方法並びに集積回路装置、光学装置、マイクロマシン及び機械精密装置の製造方法 - Google Patents

フォトレジスト現像用組成物、組成物の使用方法並びに集積回路装置、光学装置、マイクロマシン及び機械精密装置の製造方法 Download PDF

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JP6328630B2
JP6328630B2 JP2015522210A JP2015522210A JP6328630B2 JP 6328630 B2 JP6328630 B2 JP 6328630B2 JP 2015522210 A JP2015522210 A JP 2015522210A JP 2015522210 A JP2015522210 A JP 2015522210A JP 6328630 B2 JP6328630 B2 JP 6328630B2
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alkyl
photoresist
composition
independently
formula
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JP2015524577A (ja
JP2015524577A5 (https=
Inventor
クリップ，アンドレアス
ホンチウク，アンドライ
パンセラ，サブリナ モンテロ
パンセラ，サブリナ モンテロ
バーン，ツォルタン
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BASF SE
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BASF SE
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
JP2015522210A 2012-07-16 2013-07-12 フォトレジスト現像用組成物、組成物の使用方法並びに集積回路装置、光学装置、マイクロマシン及び機械精密装置の製造方法 Active JP6328630B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261671806P 2012-07-16 2012-07-16
US61/671,806 2012-07-16
PCT/IB2013/055728 WO2014013396A2 (en) 2012-07-16 2013-07-12 Composition for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices

Publications (3)

Publication Number Publication Date
JP2015524577A JP2015524577A (ja) 2015-08-24
JP2015524577A5 JP2015524577A5 (https=) 2016-09-01
JP6328630B2 true JP6328630B2 (ja) 2018-05-23

Family

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Family Applications (1)

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JP2015522210A Active JP6328630B2 (ja) 2012-07-16 2013-07-12 フォトレジスト現像用組成物、組成物の使用方法並びに集積回路装置、光学装置、マイクロマシン及び機械精密装置の製造方法

Country Status (11)

Country Link
US (1) US20150192854A1 (https=)
EP (1) EP2875406A4 (https=)
JP (1) JP6328630B2 (https=)
KR (1) KR102107370B1 (https=)
CN (1) CN104471487B (https=)
IL (1) IL236457B (https=)
MY (1) MY171072A (https=)
RU (1) RU2015104902A (https=)
SG (1) SG11201500235XA (https=)
TW (1) TWI665177B (https=)
WO (1) WO2014013396A2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015028576A (ja) * 2013-07-01 2015-02-12 富士フイルム株式会社 パターン形成方法
KR102374206B1 (ko) 2017-12-05 2022-03-14 삼성전자주식회사 반도체 장치 제조 방법
WO2022008306A1 (en) * 2020-07-09 2022-01-13 Basf Se Composition comprising a siloxane and an alkane for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4628023A (en) * 1981-04-10 1986-12-09 Shipley Company Inc. Metal ion free photoresist developer composition with lower alkyl quaternary ammonium hydrozide as alkalai agent and a quaternary ammonium compound as surfactant
JP3707856B2 (ja) * 1996-03-07 2005-10-19 富士通株式会社 レジストパターンの形成方法
JPH11218932A (ja) * 1997-10-31 1999-08-10 Nippon Zeon Co Ltd ポリイミド系感光性樹脂組成物用現像液
US6403289B1 (en) * 1997-10-31 2002-06-11 Nippon Zeon Co., Ltd. Developer for photosensitive polyimide resin composition
JP4265741B2 (ja) * 2003-02-28 2009-05-20 日本カーリット株式会社 レジスト剥離剤
JP3993549B2 (ja) * 2003-09-30 2007-10-17 株式会社東芝 レジストパターン形成方法
US7157213B2 (en) * 2004-03-01 2007-01-02 Think Laboratory Co., Ltd. Developer agent for positive type photosensitive compound
KR100993516B1 (ko) * 2005-06-13 2010-11-10 가부시끼가이샤 도꾸야마 포토레지스트 현상액, 및 그 현상액을 사용한 기판의 제조방법
JP5206304B2 (ja) * 2008-10-15 2013-06-12 東ソー株式会社 第四級アンモニウム塩の回収方法
KR101732747B1 (ko) * 2009-03-12 2017-05-04 바스프 에스이 1-아다만틸트리메틸암모늄 히드록시드의 제조 방법
WO2010127943A1 (en) * 2009-05-07 2010-11-11 Basf Se Resist stripping compositions and methods for manufacturing electrical devices
EP2287669A1 (en) * 2009-06-26 2011-02-23 Rohm and Haas Electronic Materials, L.L.C. Methods of forming electronic devices
CN101993377A (zh) * 2009-08-07 2011-03-30 出光兴产株式会社 具有金刚烷骨架的胺类和季铵盐的制造方法
JP2011145557A (ja) * 2010-01-15 2011-07-28 Tokyo Ohka Kogyo Co Ltd フォトリソグラフィ用現像液
JP6213296B2 (ja) * 2013-04-10 2017-10-18 信越化学工業株式会社 現像液を用いたパターン形成方法

Also Published As

Publication number Publication date
CN104471487A (zh) 2015-03-25
EP2875406A4 (en) 2016-11-09
JP2015524577A (ja) 2015-08-24
MY171072A (en) 2019-09-24
SG11201500235XA (en) 2015-02-27
US20150192854A1 (en) 2015-07-09
IL236457B (en) 2020-04-30
TWI665177B (zh) 2019-07-11
WO2014013396A2 (en) 2014-01-23
IL236457A0 (en) 2015-02-26
EP2875406A2 (en) 2015-05-27
RU2015104902A (ru) 2016-09-10
WO2014013396A3 (en) 2014-03-06
TW201425279A (zh) 2014-07-01
KR20150042796A (ko) 2015-04-21
CN104471487B (zh) 2019-07-09
KR102107370B1 (ko) 2020-05-07

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