RU2011130872A - Способ получения тонких отдельных слоев твердотельных материалов со структурированными поверхностями - Google Patents
Способ получения тонких отдельных слоев твердотельных материалов со структурированными поверхностями Download PDFInfo
- Publication number
- RU2011130872A RU2011130872A RU2011130872/28A RU2011130872A RU2011130872A RU 2011130872 A RU2011130872 A RU 2011130872A RU 2011130872/28 A RU2011130872/28 A RU 2011130872/28A RU 2011130872 A RU2011130872 A RU 2011130872A RU 2011130872 A RU2011130872 A RU 2011130872A
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- Prior art keywords
- auxiliary layer
- solid
- layer
- state material
- auxiliary
- Prior art date
Links
- 239000011343 solid material Substances 0.000 title claims abstract 15
- 239000007787 solid Substances 0.000 title claims 21
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000463 material Substances 0.000 claims abstract 64
- 238000000034 method Methods 0.000 claims abstract 37
- 239000002131 composite material Substances 0.000 claims abstract 18
- 238000001459 lithography Methods 0.000 claims abstract 4
- 230000015572 biosynthetic process Effects 0.000 claims abstract 2
- 230000000295 complement effect Effects 0.000 claims 4
- 238000004377 microelectronic Methods 0.000 claims 3
- 229920000642 polymer Polymers 0.000 claims 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 2
- 239000004205 dimethyl polysiloxane Substances 0.000 claims 2
- 230000000694 effects Effects 0.000 claims 2
- 230000000737 periodic effect Effects 0.000 claims 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims 2
- -1 polydimethylsiloxane Polymers 0.000 claims 2
- 239000002904 solvent Substances 0.000 claims 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 1
- 229910002601 GaN Inorganic materials 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 238000001816 cooling Methods 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 229910010272 inorganic material Inorganic materials 0.000 claims 1
- 239000011147 inorganic material Substances 0.000 claims 1
- 239000011159 matrix material Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 244000052769 pathogen Species 0.000 claims 1
- 230000001717 pathogenic effect Effects 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 239000011787 zinc oxide Substances 0.000 claims 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
- B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
- B28D1/221—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising by thermic methods
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
- B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00634—Processes for shaping materials not provided for in groups B81C1/00444 - B81C1/00626
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/03—Processes for manufacturing substrate-free structures
- B81C2201/038—Processes for manufacturing substrate-free structures not provided for in B81C2201/034 - B81C2201/036
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T225/00—Severing by tearing or breaking
- Y10T225/10—Methods
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mining & Mineral Resources (AREA)
- Mechanical Engineering (AREA)
- Micromachines (AREA)
- Printing Methods (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Photovoltaic Devices (AREA)
- Laser Beam Processing (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Manufacture Or Reproduction Of Printing Formes (AREA)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14046608P | 2008-12-23 | 2008-12-23 | |
| US61/140,466 | 2008-12-23 | ||
| US17544709P | 2009-05-04 | 2009-05-04 | |
| US61/175,447 | 2009-05-04 | ||
| US17610509P | 2009-05-06 | 2009-05-06 | |
| US61/176,105 | 2009-05-06 | ||
| PCT/EP2009/067539 WO2010072675A2 (en) | 2008-12-23 | 2009-12-18 | Method for producing thin, free-standing layers of solid state materials with structured surfaces |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| RU2011130872A true RU2011130872A (ru) | 2013-01-27 |
Family
ID=42288178
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2011130872/28A RU2011130872A (ru) | 2008-12-23 | 2009-12-18 | Способ получения тонких отдельных слоев твердотельных материалов со структурированными поверхностями |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US8877077B2 (enExample) |
| EP (3) | EP2379440B1 (enExample) |
| JP (1) | JP5762973B2 (enExample) |
| KR (1) | KR101527627B1 (enExample) |
| CN (1) | CN102325717B (enExample) |
| AU (1) | AU2009331646A1 (enExample) |
| BR (1) | BRPI0923536A2 (enExample) |
| CA (1) | CA2747840A1 (enExample) |
| ES (1) | ES2418142T3 (enExample) |
| MX (1) | MX2011006750A (enExample) |
| RU (1) | RU2011130872A (enExample) |
| WO (1) | WO2010072675A2 (enExample) |
Families Citing this family (63)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MX2010004896A (es) | 2007-11-02 | 2010-07-29 | Harvard College | Produccion de capas de estado solido independientes mediante procesamiento termico de sustratos con un polimero. |
| CN101781461B (zh) * | 2009-01-16 | 2012-01-25 | 清华大学 | 电致伸缩复合材料及其制备方法 |
| US8802477B2 (en) | 2009-06-09 | 2014-08-12 | International Business Machines Corporation | Heterojunction III-V photovoltaic cell fabrication |
| US8633097B2 (en) | 2009-06-09 | 2014-01-21 | International Business Machines Corporation | Single-junction photovoltaic cell |
| US8703521B2 (en) | 2009-06-09 | 2014-04-22 | International Business Machines Corporation | Multijunction photovoltaic cell fabrication |
| US8852994B2 (en) | 2010-05-24 | 2014-10-07 | Masimo Semiconductor, Inc. | Method of fabricating bifacial tandem solar cells |
| US8455290B2 (en) * | 2010-09-04 | 2013-06-04 | Masimo Semiconductor, Inc. | Method of fabricating epitaxial structures |
| US8841203B2 (en) * | 2011-06-14 | 2014-09-23 | International Business Machines Corporation | Method for forming two device wafers from a single base substrate utilizing a controlled spalling process |
| US8748296B2 (en) * | 2011-06-29 | 2014-06-10 | International Business Machines Corporation | Edge-exclusion spalling method for improving substrate reusability |
| DE102012001620B4 (de) | 2012-01-30 | 2025-02-13 | Siltectra Gmbh | Verfahren zur Herstellung von dünnen Platten aus Werkstoffen geringer Duktilität |
| KR101332306B1 (ko) * | 2012-03-30 | 2013-11-22 | 한국기계연구원 | 프리스탠딩 나노 박막 제조방법 |
| US20130316538A1 (en) * | 2012-05-23 | 2013-11-28 | International Business Machines Corporation | Surface morphology generation and transfer by spalling |
| BR102012016393A2 (pt) * | 2012-07-02 | 2015-04-07 | Rexam Beverage Can South America S A | Dispositivo de impressão em latas, processo de impressão em latas, lata impressa e blanqueta |
| DE102012013539A1 (de) | 2012-07-06 | 2014-01-09 | Siltectra Gmbh | Wafer und Verfahren zur Herstellung von Wafern mit Oberflächenstrukturen |
| DE102013007673A1 (de) | 2013-05-03 | 2014-11-06 | Siltectra Gmbh | Verfahren zur Herstellung von Wafern mittels einer vordefinierten Spannungsverteilung |
| DE102013007671A1 (de) | 2013-05-03 | 2014-11-06 | Siltectra Gmbh | Verfahren zur Herstellung eines Wafers mit Trägereinheit |
| DE102013007672A1 (de) | 2013-05-03 | 2014-11-06 | Siltectra Gmbh | Verfahren und Vorrichtung zur Waferherstellung mit vordefinierter Bruchauslösestelle |
| DE102013017272A1 (de) | 2013-06-06 | 2014-12-11 | Siltectra Gmbh | Vorrichtung und Verfahren zum Erzeugen von Schichtanordnungen mittels fluidischer Fließbarriere |
| US9245955B2 (en) | 2013-06-28 | 2016-01-26 | Stmicroelectronics, Inc. | Embedded shape SiGe for strained channel transistors |
| KR20150006121A (ko) * | 2013-07-08 | 2015-01-16 | 서울대학교산학협력단 | 폴리아세틸렌 나노파이버 온도센서 |
| DE102013014615A1 (de) | 2013-09-02 | 2015-03-05 | Siltectra Gmbh | Vorrichtung und Verfahren zur Herstellung eines Wafers mit einer Rissverlaufsbeeinflussung |
| DE102013014623A1 (de) * | 2013-09-02 | 2015-03-05 | Siltectra Gmbh | Vorrichtung und Verfahren zur Herstellung eines Wafers mit einer selektiven Positionierung im Trägersystem |
| DE102014014486A1 (de) | 2013-10-08 | 2015-04-09 | Siltectra Gmbh | Neuartiges Waferherstellungsverfahren |
| DE102013016682A1 (de) | 2013-10-08 | 2015-04-09 | Siltectra Gmbh | Erzeugung einer Rissauslösestelle oder einer Rissführung zum verbesserten Abspalten einer Festkörperschicht von einem Festkörper |
| DE102013016669A1 (de) | 2013-10-08 | 2015-04-09 | Siltectra Gmbh | Kombiniertes Herstellungsverfahren zum Abtrennen mehrerer dünner Festkörperschichten von einem dicken Festkörper |
| DE102013016693A1 (de) | 2013-10-08 | 2015-04-09 | Siltectra Gmbh | Herstellungsverfahren für Festkörperelemente mittels Laserbehandlung und temperaturinduzierten Spannungen |
| DE102014013107A1 (de) | 2013-10-08 | 2015-04-09 | Siltectra Gmbh | Neuartiges Waferherstellungsverfahren |
| DE102013016665A1 (de) | 2013-10-08 | 2015-04-09 | Siltectra Gmbh | Kombiniertes Waferherstellungsverfahren mit lonenimplantation und temperaturinduzierten Spannungen |
| US20150201504A1 (en) * | 2014-01-15 | 2015-07-16 | Applied Nanotech, Inc. | Copper particle composition |
| DE102015000449A1 (de) * | 2015-01-15 | 2016-07-21 | Siltectra Gmbh | Festkörperteilung mittels Stoffumwandlung |
| DE102014004574A1 (de) | 2014-03-28 | 2015-10-01 | Siltectra Gmbh | Verfahren zur Herstellung von Festkörperschichten mittels lokaler Modifikation von Leit-Stütz-Struktur-Eigenschaften einer mehrschichtigen Anordnung |
| DE102014006328A1 (de) | 2014-04-30 | 2015-11-05 | Siltectra Gmbh | Kombiniertes Festkörperherstellungsverfahren mit Laserbehandlung und temperaturinduzierten Spannungen zur Erzeugung dreidimensionaler Festkörper |
| DE102014014422A1 (de) * | 2014-09-29 | 2016-03-31 | Siltectra Gmbh | Kombiniertes Waferherstellungsverfahren mit einer Löcher aufweisenden Aufnahmeschicht |
| DE102014014420A1 (de) * | 2014-09-29 | 2016-04-14 | Siltectra Gmbh | Kombiniertes Waferherstellungsverfahren mit einer Mehrkomponentenaufnahmeschicht |
| DE102015103118A1 (de) * | 2014-10-06 | 2016-04-07 | Siltectra Gmbh | Splitting-Verfahren und Verwendung eines Materials in einem Splitting-Verfahren |
| EP4122633B1 (de) * | 2014-11-27 | 2025-03-19 | Siltectra GmbH | Festkörperteilung mittels stoffumwandlung |
| EP3223994B1 (de) | 2014-11-27 | 2023-04-26 | Siltectra GmbH | Laserbasiertes trennverfahren |
| DE102015000450A1 (de) | 2015-01-15 | 2016-07-21 | Siltectra Gmbh | Abtrennvorrichtung zum spanfreien Abtrennen von Wafern von Spendersubstraten |
| DE102015003369A1 (de) | 2015-03-16 | 2016-09-22 | Siltectra Gmbh | Transparenter und hochstabiler Displayschutz |
| DE102015104147B4 (de) | 2015-03-19 | 2019-09-12 | Osram Opto Semiconductors Gmbh | Verfahren zur Ablösung eines Aufwachssubstrats von einer Schichtenfolge |
| DE102015004347A1 (de) | 2015-04-02 | 2016-10-06 | Siltectra Gmbh | Erzeugung von physischen Modifikationen mittels LASER im Inneren eines Festkörpers |
| DE102015006971A1 (de) | 2015-04-09 | 2016-10-13 | Siltectra Gmbh | Verfahren zum verlustarmen Herstellen von Mehrkomponentenwafern |
| DE102015004603A1 (de) | 2015-04-09 | 2016-10-13 | Siltectra Gmbh | Kombiniertes Waferherstellungsverfahren mit Laserbehandlung und temperaturinduzierten Spannungen |
| DE102015008037A1 (de) | 2015-06-23 | 2016-12-29 | Siltectra Gmbh | Verfahren zum Führen eines Risses im Randbereich eines Spendersubstrats |
| DE102015008034A1 (de) | 2015-06-23 | 2016-12-29 | Siltectra Gmbh | Verfahren zum Führen eines Risses im Randbereich eines Spendersubstrats |
| US10515981B2 (en) | 2015-09-21 | 2019-12-24 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with memory |
| DE102016000051A1 (de) * | 2016-01-05 | 2017-07-06 | Siltectra Gmbh | Verfahren und Vorrichtung zum planaren Erzeugen von Modifikationen in Festkörpern |
| EP3427044B1 (en) * | 2016-03-08 | 2025-07-16 | Arizona Board of Regents on behalf of Arizona State University | Sound-assisted crack propagation for semiconductor wafering |
| JP6703617B2 (ja) * | 2016-03-22 | 2020-06-03 | ジルテクトラ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 分離されるべき固体物の複合レーザ処理 |
| DE102016014821A1 (de) | 2016-12-12 | 2018-06-14 | Siltectra Gmbh | Verfahren zum Dünnen von mit Bauteilen versehenen Festkörperschichten |
| EP3433876B1 (de) * | 2016-03-24 | 2023-09-13 | Siltectra GmbH | Ein splitting-verfahren |
| DE102016105616A1 (de) | 2016-03-24 | 2017-09-28 | Siltectra Gmbh | Polymer-Hybrid-Material, dessen Verwendung in einem Splitting-Verfahren und Verfahren zur Herstellung des Polymer-Hybrid-Materials |
| GB201616955D0 (en) * | 2016-10-06 | 2016-11-23 | University Of Newcastle Upon Tyne | Micro-milling |
| DE102017010284A1 (de) | 2017-11-07 | 2019-05-09 | Siltectra Gmbh | Verfahren zum Dünnen von mit Bauteilen versehenen Festkörperschichten |
| EP3551373A1 (de) | 2016-12-12 | 2019-10-16 | Siltectra GmbH | Verfahren zum dünnen von mit bauteilen versehenen festkörperschichten |
| JP7250695B2 (ja) | 2017-04-20 | 2023-04-03 | ジルテクトラ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 規定どおりに配向された改質線を有するウェハの製造方法 |
| DE102018001605A1 (de) | 2018-03-01 | 2019-09-05 | Siltectra Gmbh | Verfahren zum Kompensieren von Verformungen eines mittels Laserstrahl behandelten und/oder beschichteten Festkörpers |
| DE102018111450B4 (de) | 2018-05-14 | 2024-06-20 | Infineon Technologies Ag | Verfahren zum Verarbeiten eines Breiter-Bandabstand-Halbleiterwafers, Verfahren zum Bilden einer Mehrzahl von dünnen Breiter-Bandabstand-Halbleiterwafern und Breiter-Bandabstand-Halbleiterwafer |
| CN110713167B (zh) * | 2018-07-13 | 2024-01-16 | 浙江清华柔性电子技术研究院 | 微流体器件、微流体系统 |
| CN109345959A (zh) * | 2018-10-12 | 2019-02-15 | 京东方科技集团股份有限公司 | 一种柔性衬底、柔性显示面板、柔性显示装置和制作方法 |
| CN109665486B (zh) * | 2018-12-24 | 2020-08-28 | 中山大学 | 微杯及其转印制备方法和应用 |
| US11787690B1 (en) | 2020-04-03 | 2023-10-17 | Knowles Electronics, Llc. | MEMS assembly substrates including a bond layer |
| CN112276176A (zh) * | 2020-10-20 | 2021-01-29 | 哈尔滨工业大学 | 一种应用于折叠波导慢波结构的微铣削毛刺抑制方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4582559A (en) * | 1984-04-27 | 1986-04-15 | Gould Inc. | Method of making thin free standing single crystal films |
| US6943448B2 (en) * | 2003-01-23 | 2005-09-13 | Akustica, Inc. | Multi-metal layer MEMS structure and process for making the same |
| CN1227153C (zh) * | 2003-12-25 | 2005-11-16 | 中国电子科技集团公司第十三研究所 | 全干法硅－铝－硅结构微机械加工方法 |
| US9390999B2 (en) * | 2005-03-23 | 2016-07-12 | Noriaki Kawamura | Metal substrate/metal impregnated carbon composite material structure and method for manufacturing said structure |
| EP1863100A1 (en) * | 2006-05-30 | 2007-12-05 | INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM vzw (IMEC) | Method for the production of thin substrates |
| CN101274738A (zh) * | 2007-03-28 | 2008-10-01 | 中国科学院微电子研究所 | 基于多晶硅特性制作热剪切应力传感器的方法 |
-
2009
- 2009-12-18 CN CN200980157357.8A patent/CN102325717B/zh active Active
- 2009-12-18 EP EP20090807540 patent/EP2379440B1/en active Active
- 2009-12-18 ES ES09807540T patent/ES2418142T3/es active Active
- 2009-12-18 EP EP13163979.1A patent/EP2620409B1/en not_active Not-in-force
- 2009-12-18 US US13/141,821 patent/US8877077B2/en active Active
- 2009-12-18 WO PCT/EP2009/067539 patent/WO2010072675A2/en not_active Ceased
- 2009-12-18 CA CA 2747840 patent/CA2747840A1/en not_active Abandoned
- 2009-12-18 JP JP2011542787A patent/JP5762973B2/ja active Active
- 2009-12-18 KR KR1020117017441A patent/KR101527627B1/ko active Active
- 2009-12-18 AU AU2009331646A patent/AU2009331646A1/en not_active Abandoned
- 2009-12-18 EP EP13163963.5A patent/EP2620408B1/en active Active
- 2009-12-18 RU RU2011130872/28A patent/RU2011130872A/ru not_active Application Discontinuation
- 2009-12-18 BR BRPI0923536A patent/BRPI0923536A2/pt not_active IP Right Cessation
- 2009-12-18 MX MX2011006750A patent/MX2011006750A/es not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| BRPI0923536A2 (pt) | 2016-01-26 |
| ES2418142T3 (es) | 2013-08-12 |
| CA2747840A1 (en) | 2010-07-01 |
| US8877077B2 (en) | 2014-11-04 |
| JP2012513312A (ja) | 2012-06-14 |
| AU2009331646A2 (en) | 2011-09-15 |
| WO2010072675A3 (en) | 2011-04-14 |
| EP2620409A1 (en) | 2013-07-31 |
| US20110259936A1 (en) | 2011-10-27 |
| CN102325717A (zh) | 2012-01-18 |
| EP2379440B1 (en) | 2013-04-17 |
| MX2011006750A (es) | 2011-09-06 |
| AU2009331646A1 (en) | 2011-07-28 |
| EP2620408B1 (en) | 2016-03-09 |
| EP2620409B1 (en) | 2017-03-01 |
| JP5762973B2 (ja) | 2015-08-12 |
| CN102325717B (zh) | 2015-11-25 |
| EP2379440A2 (en) | 2011-10-26 |
| EP2620408A1 (en) | 2013-07-31 |
| KR20110110781A (ko) | 2011-10-07 |
| AU2009331646A8 (en) | 2011-08-04 |
| KR101527627B1 (ko) | 2015-06-10 |
| WO2010072675A2 (en) | 2010-07-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FA94 | Acknowledgement of application withdrawn (non-payment of fees) |
Effective date: 20140602 |