JP6703617B2 - 分離されるべき固体物の複合レーザ処理 - Google Patents
分離されるべき固体物の複合レーザ処理 Download PDFInfo
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Description
6 HCl + 2 Al + 12 H2O ! 2 [AlCl3*6 H2O] + 3 H2
深さ180μm、パルス持続時間3ns(ナノ秒)、開口数0.4:
低ドーピング:7μJ−21mOhmcm
高ドーピング:8μJ−16mOhmcm
低ドーピング:9.5μJ−21mOhmcm
高ドーピング:12μJ−16mOhmcm
Eは、μJ単位のエネルギー
E0は、最低ドーピングでのオフセットエネルギー
Kは、エネルギー・スケーリング係数
Rは、測定したドーピング度
Bは、基礎のドーピング度(21mOhmcm)
K=1/(21−16)μJ/mOhmcm=0.2μJ/mOhmcm
E0=7μJ
B=21mOhmcm
である。
Eは、μJ単位のエネルギー
E0は、最低ドーピングでのオフセットエネルギー
Kは、エネルギー・スケーリング係数
Rは、測定したドーピング度
Bは、基礎のドーピング度(21mOhmcm)
K=2.5/(21−16)μJ/mOhmcm=0.5μJ/mOhmcm
E0=9.5μJ
B=21mOhmcm
である。
好ましく配置される。
横方向ライン(鋸歯波付き)及び亀裂開始ライン(鋸歯の波頭上)についての一例図。
2 改質
3 改質が生成された場所
4 亀裂誘導領域
6 固体部分
8 レーザ適用装置
9 対象レンズ
10 レーザビーム
11 変更されたレーザビーム
12 凹み
14 固体層
16 固体層の表面
17 放射された表面
18 応力発生層又は受理層140
19 接着又は更なる応力発生層
24 固体物の局所的特性変化(例えば伝達性)
26 溝
28 フレーム
30 反射したビームの交差点
32 噴流装置
34 コーティング
300 チャック
L 固体物の長手方向
Claims (11)
- 固体物(1)から少なくとも1つの固体層(14)を剥離するための方法であって、ここで、1つの固体層を該固体物(1)から剥離するための亀裂を誘導するために、剥離面(4)が改質(2)によって提供され、前記方法は、
レーザ適用装置(8)に対して相対的に固体物(1)を動かす工程と、少なくとも1つの改質(2)をそれぞれ生成するために該レーザ適用装置(8)によって複数のレーザビーム(10)を相次いで生成する工程とを少なくとも含み、ここで、前記レーザビームは、前記固体物から剥離すべき前記固体層の表面を介して該固体物に入射し、
前記レーザ適用装置(8)は、改質の定義された生成のために、少なくとも1つのパラメータに依存して調整され、
作用を受けた面の領域及び/又は作用を受けた固体物の体積の領域における前記固体物の不均質性が、前記レーザ適用装置(8)の前記調整によって補償され、
さらに、前記固体物(1)から前記剥離面に沿って前記固体層(14)を剥離する工程を含む方法。 - 前記少なくとも1つのパラメータは、定義された複数位置での及び定義された固体深さについての前記固体物の伝達特性である、
請求項1の方法。 - 1又は複数の前記パラメータに関連するデータが、記憶装置内に設けられ、少なくとも改質(2)を生成する前に制御装置に供給され、ここで、該制御装置は、生成すべき改質(2)の各位置に依存して前記レーザ適用装置(8)を調整し、
及び/又は、
改質(2)を生成するための前記レーザビーム(10)は、高い伝導性を持つ領域よりも低い伝導性を持つ領域においてより大きなエネルギーを持ち、ここで、前記レーザ適用装置(8)は、レーザビームエネルギーを調整するための手段を備える、
請求項1又は2の方法。 - 前記手段は、音響光学変調器である、
請求項3の方法。 - 前記固体層(14)が、前記改質の生成の結果としての前記剥離面(4)に沿って前記固体物(1)から剥離される、又は、
前記固体物(1)が、前記改質の生成後に、熱的に作用され又は冷却され、該熱的作用の結果として、前記固体層(14)が前記剥離面(4)に沿って前記固体物(1)から剥離される、又は、
ポリマー層が、前記固体物(1)において配置又は形成され、ここで、前記ポリマー層は、剥離されるべき固体層(14)の表面に好ましく配置又は形成され、該ポリマー層は、熱的に作用され又は冷却され、該熱的作用に応じて該ポリマー層の強度が変化され、該ポリマー層の強度の変化の結果として、前記固体物(1)において機械的応力が発生され、該機械的応力は、前記固体物(1)から前記固体層(14)を剥離するために、前記剥離面に沿う亀裂伝播を引き起す、
請求項1乃至4のいずれかの方法。 - 1つのパラメータが、前記固体物内の、前記固体物の表面から或る距離をおいた、所定の位置又は所定の領域における前記固体物のドーピング度であり、
ここで、前記ドーピング度は、非弾性散乱(ラマン散乱)を持つ後方散乱光の分析によって予め決定されるものであり、前記後方散乱光は、該後方散乱を誘発するために定められた放射光とは異なる波長又は異なる波長範囲を持ち、該後方散乱光は、予め定義された位置又は予め定義された領域から後方散乱され、
若しくは、
ここで、前記ドーピング度は、渦電流測定によって好ましく決定されるものであり、前記固体物の材料における導電率の相違が決定される、
請求項1乃至5のいずれかの方法。 - 前記固体物(1)の最初に露出された表面の上又は上方に複数の層及び/又はコンポーネント(150)を配置又は生成することにより、複合構造を生成する工程を更に含み、ここで、前記露出された表面は、剥離されるべき固体層の一部であり、
前記複合構造を生成する前に、剥離面を形成するために複数の前記改質が生成される、
請求項1乃至5のいずれかの方法。 - 前記剥離面を形成する前に、前記固体物(1)が少なくとも1つの高温方法を使用して処理され、ここで、該高温方法は、70℃と前記固体物(1)の材料の融点又は蒸発温度との間の温度で実行され、
前記少なくとも1つの高温方法が、エピタキシ方法、ドーピング方法、又はプラズマを使用する方法であり、該高温方法によって前記固体物(1)上に少なくとも1つの層(145)が生成され、該生成された少なくとも1つの層(145)は予め定義された複数のパラメータを持ち、少なくとも1つの該パラメータはレーザ光波の屈折及び/又は吸収及び/又は反射の最大値を特定するものであり、屈折及び/又は吸収及び/又は反射の度合いは、5%未満である、
請求項7の方法。 - 複数の前記改質が多光子励起によって生成され、
最初に、少なくとも部分毎に均質に走るカーブした線上に、均質に走る部分において、少なくとも複数の基礎の改質が生成され、
前記基礎の改質は複数の予め定義された処理パラメータを用いて生成され、
前記複数の予め定義された処理パラメータはショットごとのエネルギー及び/又はショット密度を含み、
前記処理パラメータの少なくとも1つの値及び好ましくは両方の値又はこれら処理パラメータの全ての値若しくはこれら処理パラメータの2以上の値が、前記固体物の結晶格子安定性に依存して特定され、
該値は、結晶格子が各基礎の改質の回りにそのまま残るように選択され、
複数の更なるトリガ改質が未臨界の亀裂をトリガするために生成され、
トリガ改質を発生するための少なくとも1つの処理パラメータは、基礎の改質を発生するための少なくとも1つの処理パラメータとは異なっており、好ましくは、複数の処理パラメータが互いに異なっており、及び/又は
前記トリガ改質は、前記基礎の改質が並んで発生されているラインの進行方向に角度をなす若しくは間隔をあけた方向に生成され、前記未臨界の亀裂は5mm未満で伝播する、
請求項1乃至8のいずれかの方法。 - 前記固体物の材料はシリコンであり、その開口数は0.5乃至0.8の間であり、パルス配置間隔は1μm乃至5μmの間であり、並びラインの間隔は1μm乃至5μmの間であり、パルス持続時間は50ns乃至400nsの間であり、パルスエネルギーは5μJ乃至15μJの間であり、
若しくは、
前記固体物の材料はSiCであり、その開口数は0.5乃至0.8の間であり、放射の深さは100μm乃至300μmの間であり、パルス配置間隔は0.1μm乃至3μmの間であり、並びラインの間隔は20μm乃至100μmの間であり、パルス持続時間は1ns乃至10nsの間であり、パルスエネルギーは3μJ乃至15μJの間である、
請求項1乃至9のいずれかの方法。 - 前記未臨界の亀裂は、前記固体物において、5μm乃至200μmの間で伝播し、
及び/又は、
ガラス転移によって生成される応力の結果として前記未臨界の亀裂が伝播しているいくつかのライン状の領域の間の部分を裂く、
請求項9の方法。
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US11130200B2 (en) | 2021-09-28 |
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CN108883502B (zh) | 2022-04-15 |
KR102300061B1 (ko) | 2021-09-09 |
KR20180125532A (ko) | 2018-11-23 |
EP3433048A1 (de) | 2019-01-30 |
US20190099838A1 (en) | 2019-04-04 |
EP3433048B1 (de) | 2022-10-19 |
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