MX2011006750A - Metodo para producir capas autoestables delgadas de materiales de estado solido con superficies estructuradas. - Google Patents
Metodo para producir capas autoestables delgadas de materiales de estado solido con superficies estructuradas.Info
- Publication number
- MX2011006750A MX2011006750A MX2011006750A MX2011006750A MX2011006750A MX 2011006750 A MX2011006750 A MX 2011006750A MX 2011006750 A MX2011006750 A MX 2011006750A MX 2011006750 A MX2011006750 A MX 2011006750A MX 2011006750 A MX2011006750 A MX 2011006750A
- Authority
- MX
- Mexico
- Prior art keywords
- solid state
- free
- producing thin
- structured surfaces
- state material
- Prior art date
Links
- 239000000463 material Substances 0.000 title abstract 5
- 239000007787 solid Substances 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002131 composite material Substances 0.000 abstract 2
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
- B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
- B28D1/221—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising by thermic methods
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
- B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00634—Processes for shaping materials not provided for in groups B81C1/00444 - B81C1/00626
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/03—Processes for manufacturing substrate-free structures
- B81C2201/038—Processes for manufacturing substrate-free structures not provided for in B81C2201/034 - B81C2201/036
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T225/00—Severing by tearing or breaking
- Y10T225/10—Methods
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Mining & Mineral Resources (AREA)
- Micromachines (AREA)
- Printing Methods (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Photovoltaic Devices (AREA)
- Manufacture Or Reproduction Of Printing Formes (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Laser Beam Processing (AREA)
Abstract
Se describe un método de impresión que comprende los pasos de: proporcionar un material de estado sólido que tiene al menos una superficie expuesta; aplicar una capa auxiliar a la superficie expuesta para forma una estructura compuesta, la capa auxiliar tiene un patrón de desgaste; someter la estructura compuesta a condiciones que facilitan la fractura del material de estado sólido a lo largo de un plano a una profundidad en el mismo; y remover la capa auxiliar, y con esto, una capa del material de estado sólido que termina a la profundidad de fractura, una superficie expuesta de la capa removida de material de estado sólido tiene una topología superficial que corresponde con el patrón de desgaste.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14046608P | 2008-12-23 | 2008-12-23 | |
US17544709P | 2009-05-04 | 2009-05-04 | |
US17610509P | 2009-05-06 | 2009-05-06 | |
PCT/EP2009/067539 WO2010072675A2 (en) | 2008-12-23 | 2009-12-18 | Method for producing thin, free-standing layers of solid state materials with structured surfaces |
Publications (1)
Publication Number | Publication Date |
---|---|
MX2011006750A true MX2011006750A (es) | 2011-09-06 |
Family
ID=42288178
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX2011006750A MX2011006750A (es) | 2008-12-23 | 2009-12-18 | Metodo para producir capas autoestables delgadas de materiales de estado solido con superficies estructuradas. |
Country Status (12)
Country | Link |
---|---|
US (1) | US8877077B2 (es) |
EP (3) | EP2620409B1 (es) |
JP (1) | JP5762973B2 (es) |
KR (1) | KR101527627B1 (es) |
CN (1) | CN102325717B (es) |
AU (1) | AU2009331646A1 (es) |
BR (1) | BRPI0923536A2 (es) |
CA (1) | CA2747840A1 (es) |
ES (1) | ES2418142T3 (es) |
MX (1) | MX2011006750A (es) |
RU (1) | RU2011130872A (es) |
WO (1) | WO2010072675A2 (es) |
Families Citing this family (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2472247C2 (ru) | 2007-11-02 | 2013-01-10 | Президент Энд Феллоуз Оф Гарвард Колледж | Изготовление самостоятельных твердотельных слоев термической обработкой подложек с полимером |
CN101781461B (zh) * | 2009-01-16 | 2012-01-25 | 清华大学 | 电致伸缩复合材料及其制备方法 |
US8703521B2 (en) | 2009-06-09 | 2014-04-22 | International Business Machines Corporation | Multijunction photovoltaic cell fabrication |
US8633097B2 (en) | 2009-06-09 | 2014-01-21 | International Business Machines Corporation | Single-junction photovoltaic cell |
US8802477B2 (en) | 2009-06-09 | 2014-08-12 | International Business Machines Corporation | Heterojunction III-V photovoltaic cell fabrication |
US8852994B2 (en) | 2010-05-24 | 2014-10-07 | Masimo Semiconductor, Inc. | Method of fabricating bifacial tandem solar cells |
US8455290B2 (en) * | 2010-09-04 | 2013-06-04 | Masimo Semiconductor, Inc. | Method of fabricating epitaxial structures |
US8841203B2 (en) * | 2011-06-14 | 2014-09-23 | International Business Machines Corporation | Method for forming two device wafers from a single base substrate utilizing a controlled spalling process |
US8748296B2 (en) * | 2011-06-29 | 2014-06-10 | International Business Machines Corporation | Edge-exclusion spalling method for improving substrate reusability |
DE102012001620A1 (de) | 2012-01-30 | 2013-08-01 | Siltectra Gmbh | Verfahren zur Herstellung von dünnen Platten aus Werkstoffen geringer Duktilität mittels temperaturinduzierter mechanischer Spannung unter Verwendung von vorgefertigten Polymer-Folien |
KR101332306B1 (ko) * | 2012-03-30 | 2013-11-22 | 한국기계연구원 | 프리스탠딩 나노 박막 제조방법 |
US20130316538A1 (en) * | 2012-05-23 | 2013-11-28 | International Business Machines Corporation | Surface morphology generation and transfer by spalling |
BR102012016393A2 (pt) * | 2012-07-02 | 2015-04-07 | Rexam Beverage Can South America S A | Dispositivo de impressão em latas, processo de impressão em latas, lata impressa e blanqueta |
DE102012013539A1 (de) | 2012-07-06 | 2014-01-09 | Siltectra Gmbh | Wafer und Verfahren zur Herstellung von Wafern mit Oberflächenstrukturen |
DE102013007671A1 (de) | 2013-05-03 | 2014-11-06 | Siltectra Gmbh | Verfahren zur Herstellung eines Wafers mit Trägereinheit |
DE102013007673A1 (de) | 2013-05-03 | 2014-11-06 | Siltectra Gmbh | Verfahren zur Herstellung von Wafern mittels einer vordefinierten Spannungsverteilung |
DE102013007672A1 (de) | 2013-05-03 | 2014-11-06 | Siltectra Gmbh | Verfahren und Vorrichtung zur Waferherstellung mit vordefinierter Bruchauslösestelle |
DE102013017272A1 (de) | 2013-06-06 | 2014-12-11 | Siltectra Gmbh | Vorrichtung und Verfahren zum Erzeugen von Schichtanordnungen mittels fluidischer Fließbarriere |
US9245955B2 (en) * | 2013-06-28 | 2016-01-26 | Stmicroelectronics, Inc. | Embedded shape SiGe for strained channel transistors |
KR20150006121A (ko) * | 2013-07-08 | 2015-01-16 | 서울대학교산학협력단 | 폴리아세틸렌 나노파이버 온도센서 |
DE102013014615A1 (de) | 2013-09-02 | 2015-03-05 | Siltectra Gmbh | Vorrichtung und Verfahren zur Herstellung eines Wafers mit einer Rissverlaufsbeeinflussung |
DE102013014623A1 (de) * | 2013-09-02 | 2015-03-05 | Siltectra Gmbh | Vorrichtung und Verfahren zur Herstellung eines Wafers mit einer selektiven Positionierung im Trägersystem |
DE102014013107A1 (de) | 2013-10-08 | 2015-04-09 | Siltectra Gmbh | Neuartiges Waferherstellungsverfahren |
DE102013016669A1 (de) | 2013-10-08 | 2015-04-09 | Siltectra Gmbh | Kombiniertes Herstellungsverfahren zum Abtrennen mehrerer dünner Festkörperschichten von einem dicken Festkörper |
DE102013016693A1 (de) | 2013-10-08 | 2015-04-09 | Siltectra Gmbh | Herstellungsverfahren für Festkörperelemente mittels Laserbehandlung und temperaturinduzierten Spannungen |
DE102014014486A1 (de) | 2013-10-08 | 2015-04-09 | Siltectra Gmbh | Neuartiges Waferherstellungsverfahren |
DE102013016665A1 (de) | 2013-10-08 | 2015-04-09 | Siltectra Gmbh | Kombiniertes Waferherstellungsverfahren mit lonenimplantation und temperaturinduzierten Spannungen |
DE102013016682A1 (de) | 2013-10-08 | 2015-04-09 | Siltectra Gmbh | Erzeugung einer Rissauslösestelle oder einer Rissführung zum verbesserten Abspalten einer Festkörperschicht von einem Festkörper |
DE102015000449A1 (de) | 2015-01-15 | 2016-07-21 | Siltectra Gmbh | Festkörperteilung mittels Stoffumwandlung |
US20150201504A1 (en) * | 2014-01-15 | 2015-07-16 | Applied Nanotech, Inc. | Copper particle composition |
DE102014004574A1 (de) | 2014-03-28 | 2015-10-01 | Siltectra Gmbh | Verfahren zur Herstellung von Festkörperschichten mittels lokaler Modifikation von Leit-Stütz-Struktur-Eigenschaften einer mehrschichtigen Anordnung |
DE102014006328A1 (de) * | 2014-04-30 | 2015-11-05 | Siltectra Gmbh | Kombiniertes Festkörperherstellungsverfahren mit Laserbehandlung und temperaturinduzierten Spannungen zur Erzeugung dreidimensionaler Festkörper |
DE102014014420A1 (de) * | 2014-09-29 | 2016-04-14 | Siltectra Gmbh | Kombiniertes Waferherstellungsverfahren mit einer Mehrkomponentenaufnahmeschicht |
DE102014014422A1 (de) * | 2014-09-29 | 2016-03-31 | Siltectra Gmbh | Kombiniertes Waferherstellungsverfahren mit einer Löcher aufweisenden Aufnahmeschicht |
DE102015103118A1 (de) | 2014-10-06 | 2016-04-07 | Siltectra Gmbh | Splitting-Verfahren und Verwendung eines Materials in einem Splitting-Verfahren |
SG11201704275UA (en) * | 2014-11-27 | 2017-06-29 | Siltectra Gmbh | Splitting of a solid using conversion of material |
CN107000125B (zh) | 2014-11-27 | 2022-08-12 | 西尔特克特拉有限责任公司 | 基于激光器的分离方法 |
DE102015000450A1 (de) | 2015-01-15 | 2016-07-21 | Siltectra Gmbh | Abtrennvorrichtung zum spanfreien Abtrennen von Wafern von Spendersubstraten |
DE102015003369A1 (de) | 2015-03-16 | 2016-09-22 | Siltectra Gmbh | Transparenter und hochstabiler Displayschutz |
DE102015104147B4 (de) | 2015-03-19 | 2019-09-12 | Osram Opto Semiconductors Gmbh | Verfahren zur Ablösung eines Aufwachssubstrats von einer Schichtenfolge |
DE102015004347A1 (de) | 2015-04-02 | 2016-10-06 | Siltectra Gmbh | Erzeugung von physischen Modifikationen mittels LASER im Inneren eines Festkörpers |
DE102015006971A1 (de) * | 2015-04-09 | 2016-10-13 | Siltectra Gmbh | Verfahren zum verlustarmen Herstellen von Mehrkomponentenwafern |
DE102015004603A1 (de) | 2015-04-09 | 2016-10-13 | Siltectra Gmbh | Kombiniertes Waferherstellungsverfahren mit Laserbehandlung und temperaturinduzierten Spannungen |
DE102015008034A1 (de) | 2015-06-23 | 2016-12-29 | Siltectra Gmbh | Verfahren zum Führen eines Risses im Randbereich eines Spendersubstrats |
DE102015008037A1 (de) | 2015-06-23 | 2016-12-29 | Siltectra Gmbh | Verfahren zum Führen eines Risses im Randbereich eines Spendersubstrats |
DE112016004265T5 (de) | 2015-09-21 | 2018-06-07 | Monolithic 3D Inc. | 3d halbleitervorrichtung und -struktur |
DE102016000051A1 (de) | 2016-01-05 | 2017-07-06 | Siltectra Gmbh | Verfahren und Vorrichtung zum planaren Erzeugen von Modifikationen in Festkörpern |
KR102388994B1 (ko) | 2016-03-22 | 2022-04-22 | 실텍트라 게엠베하 | 분리될 고형체의 결합된 레이저 처리 방법 |
DE102016014821A1 (de) | 2016-12-12 | 2018-06-14 | Siltectra Gmbh | Verfahren zum Dünnen von mit Bauteilen versehenen Festkörperschichten |
DE102016105616A1 (de) | 2016-03-24 | 2017-09-28 | Siltectra Gmbh | Polymer-Hybrid-Material, dessen Verwendung in einem Splitting-Verfahren und Verfahren zur Herstellung des Polymer-Hybrid-Materials |
WO2017162800A1 (de) | 2016-03-24 | 2017-09-28 | Siltectra Gmbh | Polymer-hybrid-material zur verwendung in einem splitting-verfahren |
GB201616955D0 (en) * | 2016-10-06 | 2016-11-23 | University Of Newcastle Upon Tyne | Micro-milling |
DE102017010284A1 (de) | 2017-11-07 | 2019-05-09 | Siltectra Gmbh | Verfahren zum Dünnen von mit Bauteilen versehenen Festkörperschichten |
EP3551373A1 (de) | 2016-12-12 | 2019-10-16 | Siltectra GmbH | Verfahren zum dünnen von mit bauteilen versehenen festkörperschichten |
KR20200008566A (ko) | 2017-04-20 | 2020-01-28 | 실텍트라 게엠베하 | 구성요소가 제공되는 솔리드 스테이트 층의 두께를 감소시키는 방법 |
DE102018001605A1 (de) | 2018-03-01 | 2019-09-05 | Siltectra Gmbh | Verfahren zum Kompensieren von Verformungen eines mittels Laserstrahl behandelten und/oder beschichteten Festkörpers |
DE102018111450B4 (de) | 2018-05-14 | 2024-06-20 | Infineon Technologies Ag | Verfahren zum Verarbeiten eines Breiter-Bandabstand-Halbleiterwafers, Verfahren zum Bilden einer Mehrzahl von dünnen Breiter-Bandabstand-Halbleiterwafern und Breiter-Bandabstand-Halbleiterwafer |
CN110713168B (zh) * | 2018-07-13 | 2023-09-26 | 浙江清华柔性电子技术研究院 | 微流体器件的制备方法 |
CN109345959A (zh) * | 2018-10-12 | 2019-02-15 | 京东方科技集团股份有限公司 | 一种柔性衬底、柔性显示面板、柔性显示装置和制作方法 |
CN109665486B (zh) * | 2018-12-24 | 2020-08-28 | 中山大学 | 微杯及其转印制备方法和应用 |
US11787690B1 (en) | 2020-04-03 | 2023-10-17 | Knowles Electronics, Llc. | MEMS assembly substrates including a bond layer |
CN112276176A (zh) * | 2020-10-20 | 2021-01-29 | 哈尔滨工业大学 | 一种应用于折叠波导慢波结构的微铣削毛刺抑制方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4582559A (en) * | 1984-04-27 | 1986-04-15 | Gould Inc. | Method of making thin free standing single crystal films |
US6943448B2 (en) * | 2003-01-23 | 2005-09-13 | Akustica, Inc. | Multi-metal layer MEMS structure and process for making the same |
CN1227153C (zh) * | 2003-12-25 | 2005-11-16 | 中国电子科技集团公司第十三研究所 | 全干法硅-铝-硅结构微机械加工方法 |
US9390999B2 (en) * | 2005-03-23 | 2016-07-12 | Noriaki Kawamura | Metal substrate/metal impregnated carbon composite material structure and method for manufacturing said structure |
EP1863100A1 (en) * | 2006-05-30 | 2007-12-05 | INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM vzw (IMEC) | Method for the production of thin substrates |
CN101274738A (zh) * | 2007-03-28 | 2008-10-01 | 中国科学院微电子研究所 | 基于多晶硅特性制作热剪切应力传感器的方法 |
-
2009
- 2009-12-18 AU AU2009331646A patent/AU2009331646A1/en not_active Abandoned
- 2009-12-18 ES ES09807540T patent/ES2418142T3/es active Active
- 2009-12-18 EP EP13163979.1A patent/EP2620409B1/en active Active
- 2009-12-18 CN CN200980157357.8A patent/CN102325717B/zh active Active
- 2009-12-18 EP EP13163963.5A patent/EP2620408B1/en active Active
- 2009-12-18 BR BRPI0923536A patent/BRPI0923536A2/pt not_active IP Right Cessation
- 2009-12-18 KR KR1020117017441A patent/KR101527627B1/ko active IP Right Grant
- 2009-12-18 CA CA 2747840 patent/CA2747840A1/en not_active Abandoned
- 2009-12-18 EP EP20090807540 patent/EP2379440B1/en active Active
- 2009-12-18 WO PCT/EP2009/067539 patent/WO2010072675A2/en active Application Filing
- 2009-12-18 RU RU2011130872/28A patent/RU2011130872A/ru not_active Application Discontinuation
- 2009-12-18 MX MX2011006750A patent/MX2011006750A/es not_active Application Discontinuation
- 2009-12-18 US US13/141,821 patent/US8877077B2/en active Active
- 2009-12-18 JP JP2011542787A patent/JP5762973B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
AU2009331646A8 (en) | 2011-08-04 |
EP2620409B1 (en) | 2017-03-01 |
KR101527627B1 (ko) | 2015-06-10 |
CN102325717B (zh) | 2015-11-25 |
EP2620409A1 (en) | 2013-07-31 |
CA2747840A1 (en) | 2010-07-01 |
RU2011130872A (ru) | 2013-01-27 |
EP2620408A1 (en) | 2013-07-31 |
JP5762973B2 (ja) | 2015-08-12 |
KR20110110781A (ko) | 2011-10-07 |
CN102325717A (zh) | 2012-01-18 |
WO2010072675A3 (en) | 2011-04-14 |
JP2012513312A (ja) | 2012-06-14 |
EP2620408B1 (en) | 2016-03-09 |
US8877077B2 (en) | 2014-11-04 |
AU2009331646A2 (en) | 2011-09-15 |
EP2379440A2 (en) | 2011-10-26 |
WO2010072675A2 (en) | 2010-07-01 |
ES2418142T3 (es) | 2013-08-12 |
AU2009331646A1 (en) | 2011-07-28 |
BRPI0923536A2 (pt) | 2016-01-26 |
EP2379440B1 (en) | 2013-04-17 |
US20110259936A1 (en) | 2011-10-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
MX2011006750A (es) | Metodo para producir capas autoestables delgadas de materiales de estado solido con superficies estructuradas. | |
WO2009061353A3 (en) | Production of free-standing solid state layers by thermal processing of substrates with a polymer | |
ATE506704T1 (de) | Verfahren zur herstellung einer mikroelektromechanischen einrichtung mit piezoelektrischen blöcken | |
ATE510795T1 (de) | Verfahren zur herstellung eines elektromechanischen mems-bauteils in einem einkristallinen material | |
CR20110087A (es) | Metodo y montaje para productos tri-dimencionales | |
WO2010049771A3 (de) | Verbundmaterial, verfahren zum herstellen eines verbundmaterials sowie kleber oder bondmaterial | |
TW201130324A (en) | Two-or multi-layer ferroelectret and method for the production thereof | |
WO2009057381A1 (ja) | 脆性材料基板の分断方法 | |
EP2436052A4 (en) | METHOD FOR PRODUCING AN ELECTROMECHANICAL CONVERTER, ELECTROMECHANICAL CONVERTERS MANUFACTURED IN THIS PROCESS, LIQUID STROKE SPRAY HEAD, AND LIQUID SPRAYING APPARATUS | |
MX2011013713A (es) | Cuerpo de multiples capas. | |
JP2014001723A5 (es) | ||
EP2505548A3 (en) | Micromechanical sound transducer having a membrane support with tapered surface | |
ATE523067T1 (de) | Verfahren zur herstellung einer mehrschichtigen stapelstruktur mit verbesserter wvtr- grenzeigenschaft | |
TW200711982A (en) | Method for manufacturing a component having a three-dimensional structure in a surface region and a ceramic component | |
TW200644757A (en) | Multilayer ceramic substrate and production method thereof | |
SG130125A1 (en) | Methods for applying a hybrid thermal barrier coating, and coating articles | |
WO2009122373A3 (en) | Patterned artificial marble slab | |
WO2009002644A8 (en) | Methods of making hierarchical articles | |
GB201215891D0 (en) | Composite material comprising a layer of polymeric piezoelectic material matched with a textile substrate and method for making such a composite material | |
WO2008103779A3 (en) | Composite laminate and method of producing a composite laminate | |
WO2008110883A3 (en) | Methods for manufacturing laminate, device applied herewith, laminate obtained herewith, method for encasing substrates and encased substrate obtained herewith | |
ATE544175T1 (de) | Transferverfahren einer dünnschicht auf ein zielsubstrat, das einen anderen wärmedehnungskoeffizienten besitzt als die dünnschicht | |
WO2007138286A3 (en) | Ultrahydrophobic surfaces and methods for their production | |
PL1979635T3 (pl) | Kompozytowe elementy kształtowe i sposób ich wytwarzania | |
WO2009137038A3 (en) | Channel and method of forming channels |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FA | Abandonment or withdrawal |