JP5762973B2 - 構造化表面を備えた固体状材料の薄い独立層を生産する方法 - Google Patents

構造化表面を備えた固体状材料の薄い独立層を生産する方法 Download PDF

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JP5762973B2
JP5762973B2 JP2011542787A JP2011542787A JP5762973B2 JP 5762973 B2 JP5762973 B2 JP 5762973B2 JP 2011542787 A JP2011542787 A JP 2011542787A JP 2011542787 A JP2011542787 A JP 2011542787A JP 5762973 B2 JP5762973 B2 JP 5762973B2
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auxiliary layer
layer
solid material
stress
pattern
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JP2012513312A (ja
JP2012513312A5 (enExample
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ルーカス リヒテンシュタイガー
ルーカス リヒテンシュタイガー
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ジルテクトラ ゲゼルシャフト ミット ベシュレンクテル ハフツング
ジルテクトラ ゲゼルシャフト ミット ベシュレンクテル ハフツング
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • B28D1/221—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising by thermic methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00634—Processes for shaping materials not provided for in groups B81C1/00444 - B81C1/00626
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/03—Processes for manufacturing substrate-free structures
    • B81C2201/038—Processes for manufacturing substrate-free structures not provided for in B81C2201/034 - B81C2201/036
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T225/00—Severing by tearing or breaking
    • Y10T225/10—Methods

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mining & Mineral Resources (AREA)
  • Mechanical Engineering (AREA)
  • Micromachines (AREA)
  • Printing Methods (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Photovoltaic Devices (AREA)
  • Laser Beam Processing (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Manufacture Or Reproduction Of Printing Formes (AREA)
JP2011542787A 2008-12-23 2009-12-18 構造化表面を備えた固体状材料の薄い独立層を生産する方法 Active JP5762973B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US14046608P 2008-12-23 2008-12-23
US61/140,466 2008-12-23
US17544709P 2009-05-04 2009-05-04
US61/175,447 2009-05-04
US17610509P 2009-05-06 2009-05-06
US61/176,105 2009-05-06
PCT/EP2009/067539 WO2010072675A2 (en) 2008-12-23 2009-12-18 Method for producing thin, free-standing layers of solid state materials with structured surfaces

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JP2012513312A JP2012513312A (ja) 2012-06-14
JP2012513312A5 JP2012513312A5 (enExample) 2013-02-14
JP5762973B2 true JP5762973B2 (ja) 2015-08-12

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US (1) US8877077B2 (enExample)
EP (3) EP2379440B1 (enExample)
JP (1) JP5762973B2 (enExample)
KR (1) KR101527627B1 (enExample)
CN (1) CN102325717B (enExample)
AU (1) AU2009331646A1 (enExample)
BR (1) BRPI0923536A2 (enExample)
CA (1) CA2747840A1 (enExample)
ES (1) ES2418142T3 (enExample)
MX (1) MX2011006750A (enExample)
RU (1) RU2011130872A (enExample)
WO (1) WO2010072675A2 (enExample)

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BRPI0923536A2 (pt) 2016-01-26
ES2418142T3 (es) 2013-08-12
CA2747840A1 (en) 2010-07-01
US8877077B2 (en) 2014-11-04
JP2012513312A (ja) 2012-06-14
AU2009331646A2 (en) 2011-09-15
WO2010072675A3 (en) 2011-04-14
EP2620409A1 (en) 2013-07-31
US20110259936A1 (en) 2011-10-27
CN102325717A (zh) 2012-01-18
EP2379440B1 (en) 2013-04-17
MX2011006750A (es) 2011-09-06
AU2009331646A1 (en) 2011-07-28
EP2620408B1 (en) 2016-03-09
EP2620409B1 (en) 2017-03-01
CN102325717B (zh) 2015-11-25
EP2379440A2 (en) 2011-10-26
EP2620408A1 (en) 2013-07-31
KR20110110781A (ko) 2011-10-07
AU2009331646A8 (en) 2011-08-04
KR101527627B1 (ko) 2015-06-10
WO2010072675A2 (en) 2010-07-01
RU2011130872A (ru) 2013-01-27

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