CN102325717B - 生产具有结构化表面的薄的、独立式固态材料层的方法 - Google Patents

生产具有结构化表面的薄的、独立式固态材料层的方法 Download PDF

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CN102325717B
CN102325717B CN200980157357.8A CN200980157357A CN102325717B CN 102325717 B CN102325717 B CN 102325717B CN 200980157357 A CN200980157357 A CN 200980157357A CN 102325717 B CN102325717 B CN 102325717B
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auxiliary layer
layer
solid
pattern
stress
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CN102325717A (zh
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L.利希滕斯泰格
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Siltectra GmbH
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Siltectra GmbH
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • B28D1/221Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising by thermic methods
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00634Processes for shaping materials not provided for in groups B81C1/00444 - B81C1/00626
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00Manufacture or treatment of microstructural devices or systems
    • B81C2201/03Processes for manufacturing substrate-free structures
    • B81C2201/038Processes for manufacturing substrate-free structures not provided for in B81C2201/034 - B81C2201/036
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T225/00Severing by tearing or breaking
    • Y10T225/10Methods

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mining & Mineral Resources (AREA)
  • Mechanical Engineering (AREA)
  • Micromachines (AREA)
  • Printing Methods (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Photovoltaic Devices (AREA)
  • Laser Beam Processing (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Manufacture Or Reproduction Of Printing Formes (AREA)
CN200980157357.8A 2008-12-23 2009-12-18 生产具有结构化表面的薄的、独立式固态材料层的方法 Active CN102325717B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US14046608P 2008-12-23 2008-12-23
US61/140466 2008-12-23
US17544709P 2009-05-04 2009-05-04
US61/175447 2009-05-04
US17610509P 2009-05-06 2009-05-06
US61/176105 2009-05-06
PCT/EP2009/067539 WO2010072675A2 (en) 2008-12-23 2009-12-18 Method for producing thin, free-standing layers of solid state materials with structured surfaces

Publications (2)

Publication Number Publication Date
CN102325717A CN102325717A (zh) 2012-01-18
CN102325717B true CN102325717B (zh) 2015-11-25

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Country Status (12)

Country Link
US (1) US8877077B2 (enExample)
EP (3) EP2379440B1 (enExample)
JP (1) JP5762973B2 (enExample)
KR (1) KR101527627B1 (enExample)
CN (1) CN102325717B (enExample)
AU (1) AU2009331646A1 (enExample)
BR (1) BRPI0923536A2 (enExample)
CA (1) CA2747840A1 (enExample)
ES (1) ES2418142T3 (enExample)
MX (1) MX2011006750A (enExample)
RU (1) RU2011130872A (enExample)
WO (1) WO2010072675A2 (enExample)

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CN110713167B (zh) * 2018-07-13 2024-01-16 浙江清华柔性电子技术研究院 微流体器件、微流体系统
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Also Published As

Publication number Publication date
BRPI0923536A2 (pt) 2016-01-26
ES2418142T3 (es) 2013-08-12
CA2747840A1 (en) 2010-07-01
US8877077B2 (en) 2014-11-04
JP2012513312A (ja) 2012-06-14
AU2009331646A2 (en) 2011-09-15
WO2010072675A3 (en) 2011-04-14
EP2620409A1 (en) 2013-07-31
US20110259936A1 (en) 2011-10-27
CN102325717A (zh) 2012-01-18
EP2379440B1 (en) 2013-04-17
MX2011006750A (es) 2011-09-06
AU2009331646A1 (en) 2011-07-28
EP2620408B1 (en) 2016-03-09
EP2620409B1 (en) 2017-03-01
JP5762973B2 (ja) 2015-08-12
EP2379440A2 (en) 2011-10-26
EP2620408A1 (en) 2013-07-31
KR20110110781A (ko) 2011-10-07
AU2009331646A8 (en) 2011-08-04
KR101527627B1 (ko) 2015-06-10
WO2010072675A2 (en) 2010-07-01
RU2011130872A (ru) 2013-01-27

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