Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B28—WORKING CEMENT, CLAY, OR STONE
  • B28D—WORKING STONE OR STONE-LIKE MATERIALS
  • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
  • B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
  • B28D1/221—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising by thermic methods
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B28—WORKING CEMENT, CLAY, OR STONE
  • B28D—WORKING STONE OR STONE-LIKE MATERIALS
  • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
  • B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B81—MICROSTRUCTURAL TECHNOLOGY
  • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
  • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B81—MICROSTRUCTURAL TECHNOLOGY
  • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
  • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
  • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
  • B81C1/00634—Processes for shaping materials not provided for in groups B81C1/00444 - B81C1/00626
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
  • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
  • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
  • H01L21/76—Making of isolation regions between components
  • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
  • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
  • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B81—MICROSTRUCTURAL TECHNOLOGY
  • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
  • B81C2201/00—Manufacture or treatment of microstructural devices or systems
  • B81C2201/03—Processes for manufacturing substrate-free structures
  • B81C2201/038—Processes for manufacturing substrate-free structures not provided for in B81C2201/034 - B81C2201/036
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T225/00—Severing by tearing or breaking
  • Y10T225/10—Methods

Definitions

• Fig.2 illustrates schematically the process sequence of the present method in four steps (from top to bottom), in perspective view;
• the patterning step (STEP 3) is performed using irradiation with a laser beam instead of cutting with a sharp knife.
• the laser preferably has a frequency that is strongly absorbed by PDMS (a CO 2 laser meets this criterion), and preferably the intensity and the motion of the beam over the PDMS layer 3a is controlled in an automated or manual fashion to cut a desired pattern.
• Commercially available laser cutters e.g., VERSA LASER VLS 6.60, with 60 Watt CO 2 laser are acceptable.
• UV light ultraviolet
• the PDMS layer 3a is then exposed to UV irradiation (e.g., 254 nm, 10-30 min) through an amplitude photomask showing the desired pattern 6.
• UV irradiation e.g., 254 nm, 10-30 min
• the exposed regions of the PDMS layer 3a become stiffer and less elastomeric, and have a CTE and elastic modulus that are different from those of the surrounding areas.
• the PDMS (or other polymer, or in general any material in the auxiliary layer) may also be chemically modified to facilitate a particular form of cure (or, in general, solidifying, possibly generating internal stress inside the layer during solidification already), for example, curing PDMS by UV irradiation may be facilitated, e.g., by immersing the PDMS in benzophenone (a photosensitizer that generates radicals under irradiation), or by, e.g., replacing the methyl groups in the PDMS with photoreactive substituents.
• benzophenone a photosensitizer that generates radicals under irradiation
• the three-layer composite (PDMS 3a - wafer 2 - PDMS 3b) is cooled down to room temperature. After that, any PDMS protruding along the circumference of the wafer 2 is removed with a sharp knife, such that the edge of the wafer 2 is essentially free of PDMS, and PDMS covers only the two faces 1 a and 1 b of the wafer 2. It is possible to avoid having any PDMS protrude over the circumference of the wafer (and thus touch the edge of the wafer) by applying the PDMS to the wafer face carefully and letting it equilibrate on a horizontal surface; in this way the surface tension of the PDMS will keep it from overflowing onto the wafer edges.
• the PDMS (or other polymer) in the auxiliary layer can be cured (i.e., its polymer chains cross-linked) by means other than heating it on a hotplate.
• it may be heated by blowing a hot gas over it, or irradiating it with, e.g., infrared light.
• curing may be accomplished using chemical additives, ultraviolet radiation, or electron beam.
• different formulations of the same material may be used in different parts of the auxiliary layer, for example, different polymer chain lengths are used depending on the position within the auxiliary layer.
• different degrees of cross-linking of polymer chains may be used, depending on the position within the auxiliary layer (a locally higher degree of cross-linking may be used to locally increase the glass transition temperature, i.e., to make the material stiffer at predefineable locations within the auxiliary layer).
• Predefineable patterns of areas with locally differing degree of cross-linking may e.g. be created through selective irradiation with a UV light source, e.g. through a mask or by directing a UV laser beam over the desired areas, in particular when using photocurable polymers.
• non-homogeneous physical conditions inside the auxiliary layer may include creating anisotropic material properties in pre-defined parts of the auxiliary layer. For example, preferentially aligning and/or orienting polymer chains in certain pre-defined parts of an auxiliary layer substantially comprising a polymer results in pre-definable parts of the auxiliary layer having substantially anisotropic elastic modulus. For example, this facilitates fracture (spalling) to start and/or progress more preferentially along certain directions in the work piece rather than along other directions.
• an auxiliary layer comprising one or more materials with anisotropic material properties is used for producing thin layers from a work piece that also has anisotropic material properties.
• An additional advantage of the invention is that the production of very thin sheets (less than approximately 100 micrometer thickness) is faster and less labor-intensive than with previous methods, such as e.g. grinding and polishing.
• the wafer 2 can be used straight out of wafer production, or it can be roughly pre-cleaned using conventional methods (e.g., with organic solvents and water, or by plasma oxidation cleaning).
• STEP 2 On each face 1a and 1 b of the wafer 2 a thin layer 3a and 3b of polydiorganolsiloxane (e.g., polydimethylsiloxane, or PDMS; the ensuing discussions refers to PDMS for convenience, but it should be understood that any suitable silicone polymer or copolymer may be employed) is applied and cured (or allowed to cure).
• polydiorganolsiloxane e.g., polydimethylsiloxane, or PDMS; the ensuing discussions refers to PDMS for convenience, but it should be understood that any suitable silicone polymer or copolymer may be employed
• thin, free-standing layers of solid state materials are produced by inducing locally controllable stresses in the solid state material. Such stresses are induced by setting up locally controlled stresses in an auxiliary layer that adheres to the solid state material.
• the auxiliary layer may be joined to a work piece of solid state material through sufficiently strong adhesion. Under appropriate conditions, the mechanical stresses lead to the splitting-off of a thin layer from the work piece, in parallel to the interface between work piece and auxiliary layer, with the auxiliary layer still adhering to the split-off thin layer.
• the auxiliary layer is then patterned and used as a mask, i.e., the material of the auxiliary layer is selectively removed in certain areas (e.g. by photolithography) in order to form a pattern of mask openings.
• the auxiliary layer locally definable structures can be formed on the underlying surface of the thin layer of solid state material by a number of well-known techniques, e.g., by physical vapor deposition.
• One advantage of using such tunnels is that, in principle, in each tunnel a different structure formation process can be used, which allows simultaneous application of different structure formation processes on the thin layer, using only one single mask (e.g., simultaneous electrodeposition of different metals in different tunnels). In this way, for example, different locally definable surface structures consisting of different materials can be created simultaneously on the same thin layer of solid state material, using only one single mask.

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• Engineering & Computer Science (AREA)
• Manufacturing & Machinery (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Computer Hardware Design (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Power Engineering (AREA)
• Mining & Mineral Resources (AREA)
• Mechanical Engineering (AREA)
• Micromachines (AREA)
• Printing Methods (AREA)
• Mechanical Treatment Of Semiconductor (AREA)
• Photovoltaic Devices (AREA)
• Laser Beam Processing (AREA)
• Crystals, And After-Treatments Of Crystals (AREA)
• Manufacture Or Reproduction Of Printing Formes (AREA)

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Cited By (42)

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• 2009
  • 2009-12-18 CN CN200980157357.8A patent/CN102325717B/zh active Active
  • 2009-12-18 EP EP20090807540 patent/EP2379440B1/en active Active
  • 2009-12-18 ES ES09807540T patent/ES2418142T3/es active Active
  • 2009-12-18 EP EP13163979.1A patent/EP2620409B1/en not_active Not-in-force
  • 2009-12-18 US US13/141,821 patent/US8877077B2/en active Active
  • 2009-12-18 WO PCT/EP2009/067539 patent/WO2010072675A2/en not_active Ceased
  • 2009-12-18 CA CA 2747840 patent/CA2747840A1/en not_active Abandoned
  • 2009-12-18 JP JP2011542787A patent/JP5762973B2/ja active Active
  • 2009-12-18 KR KR1020117017441A patent/KR101527627B1/ko active Active
  • 2009-12-18 AU AU2009331646A patent/AU2009331646A1/en not_active Abandoned
  • 2009-12-18 EP EP13163963.5A patent/EP2620408B1/en active Active
  • 2009-12-18 RU RU2011130872/28A patent/RU2011130872A/ru not_active Application Discontinuation
  • 2009-12-18 BR BRPI0923536A patent/BRPI0923536A2/pt not_active IP Right Cessation
  • 2009-12-18 MX MX2011006750A patent/MX2011006750A/es not_active Application Discontinuation

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