CN102856232A - 用于改进基板可重用性的边缘排除剥离方法 - Google Patents
用于改进基板可重用性的边缘排除剥离方法 Download PDFInfo
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- CN102856232A CN102856232A CN2012102251128A CN201210225112A CN102856232A CN 102856232 A CN102856232 A CN 102856232A CN 2012102251128 A CN2012102251128 A CN 2012102251128A CN 201210225112 A CN201210225112 A CN 201210225112A CN 102856232 A CN102856232 A CN 102856232A
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
- H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/34—Masking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- General Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Laminated Bodies (AREA)
- Measuring Or Testing Involving Enzymes Or Micro-Organisms (AREA)
Abstract
Description
Claims (24)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/172,793 | 2011-06-29 | ||
US13/172,793 US8748296B2 (en) | 2011-06-29 | 2011-06-29 | Edge-exclusion spalling method for improving substrate reusability |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102856232A true CN102856232A (zh) | 2013-01-02 |
CN102856232B CN102856232B (zh) | 2015-05-06 |
Family
ID=46396775
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210225112.8A Active CN102856232B (zh) | 2011-06-29 | 2012-06-29 | 用于改进基板可重用性的边缘排除剥离方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8748296B2 (zh) |
CN (1) | CN102856232B (zh) |
DE (1) | DE102012210227B4 (zh) |
GB (1) | GB2492444B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104008963A (zh) * | 2013-02-22 | 2014-08-27 | 国际商业机器公司 | 一种在受控衬底剥脱期间促进开裂萌生的方法 |
CN104037059A (zh) * | 2013-03-05 | 2014-09-10 | 国际商业机器公司 | 改善剥脱衬底的表面质量的方法 |
CN104112690B (zh) * | 2013-04-19 | 2017-06-06 | 国际商业机器公司 | 用于衬底分离的裂纹控制 |
US10269643B2 (en) | 2013-05-03 | 2019-04-23 | Siltectra, GmbH | Method and device for the production of wafers with a pre-defined break initiation point |
CN110741427A (zh) * | 2017-11-10 | 2020-01-31 | 深圳市柔宇科技有限公司 | 柔性面板的制作方法、柔性面板和显示装置 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8658444B2 (en) * | 2012-05-16 | 2014-02-25 | International Business Machines Corporation | Semiconductor active matrix on buried insulator |
US9058990B1 (en) * | 2013-12-19 | 2015-06-16 | International Business Machines Corporation | Controlled spalling of group III nitrides containing an embedded spall releasing plane |
GB2525904B (en) * | 2014-05-08 | 2018-05-09 | Surecore Ltd | Memory unit |
US9653554B2 (en) | 2014-07-21 | 2017-05-16 | Soraa, Inc. | Reusable nitride wafer, method of making, and use thereof |
KR102192589B1 (ko) * | 2014-08-08 | 2020-12-18 | 삼성디스플레이 주식회사 | 플렉서블 디스플레이 장치 |
DE102015103118A1 (de) | 2014-10-06 | 2016-04-07 | Siltectra Gmbh | Splitting-Verfahren und Verwendung eines Materials in einem Splitting-Verfahren |
US9578736B2 (en) * | 2014-12-23 | 2017-02-21 | International Business Machines Corporation | Patterned metallization handle layer for controlled spalling |
US9748353B2 (en) | 2015-12-31 | 2017-08-29 | International Business Machines Corporation | Method of making a gallium nitride device |
US9570295B1 (en) | 2016-01-29 | 2017-02-14 | International Business Machines Corporation | Protective capping layer for spalled gallium nitride |
WO2017162800A1 (de) * | 2016-03-24 | 2017-09-28 | Siltectra Gmbh | Polymer-hybrid-material zur verwendung in einem splitting-verfahren |
KR20180050452A (ko) * | 2016-11-04 | 2018-05-15 | 코닝 인코포레이티드 | 코팅 과정에서의 글래스 기반 제품의 마스킹 및 고정, 및 이에 의해 제조된 제품 |
US10419574B2 (en) | 2017-08-23 | 2019-09-17 | Micron Technology, Inc. | Memory device with a multi-mode communication mechanism |
US10622636B2 (en) | 2017-09-29 | 2020-04-14 | International Business Machines Corporation | High-capacity rechargeable battery stacks containing a spalled cathode material |
US10601033B2 (en) | 2017-09-29 | 2020-03-24 | International Business Machines Corporation | High-performance rechargeable batteries having a spalled and textured cathode layer |
US10658531B2 (en) | 2017-10-18 | 2020-05-19 | International Business Machines Corporation | Spalling techniques for manufacturing photodiodes |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4582559A (en) * | 1984-04-27 | 1986-04-15 | Gould Inc. | Method of making thin free standing single crystal films |
US20070249140A1 (en) * | 2006-04-19 | 2007-10-25 | Interuniversitair Microelecktronica Centrum (Imec) | Method for the production of thin substrates |
WO2010072675A2 (en) * | 2008-12-23 | 2010-07-01 | Pfeffer, Christian | Method for producing thin, free-standing layers of solid state materials with structured surfaces |
US20100307572A1 (en) * | 2009-06-09 | 2010-12-09 | International Business Machines Corporation | Heterojunction III-V Photovoltaic Cell Fabrication |
US20100310775A1 (en) * | 2009-06-09 | 2010-12-09 | International Business Machines Corporation | Spalling for a Semiconductor Substrate |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100047959A1 (en) * | 2006-08-07 | 2010-02-25 | Emcore Solar Power, Inc. | Epitaxial Lift Off on Film Mounted Inverted Metamorphic Multijunction Solar Cells |
US20110048517A1 (en) | 2009-06-09 | 2011-03-03 | International Business Machines Corporation | Multijunction Photovoltaic Cell Fabrication |
-
2011
- 2011-06-29 US US13/172,793 patent/US8748296B2/en active Active
-
2012
- 2012-05-10 GB GB1208147.7A patent/GB2492444B/en not_active Expired - Fee Related
- 2012-06-18 DE DE102012210227.2A patent/DE102012210227B4/de active Active
- 2012-06-29 CN CN201210225112.8A patent/CN102856232B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4582559A (en) * | 1984-04-27 | 1986-04-15 | Gould Inc. | Method of making thin free standing single crystal films |
US20070249140A1 (en) * | 2006-04-19 | 2007-10-25 | Interuniversitair Microelecktronica Centrum (Imec) | Method for the production of thin substrates |
WO2010072675A2 (en) * | 2008-12-23 | 2010-07-01 | Pfeffer, Christian | Method for producing thin, free-standing layers of solid state materials with structured surfaces |
US20100307572A1 (en) * | 2009-06-09 | 2010-12-09 | International Business Machines Corporation | Heterojunction III-V Photovoltaic Cell Fabrication |
US20100310775A1 (en) * | 2009-06-09 | 2010-12-09 | International Business Machines Corporation | Spalling for a Semiconductor Substrate |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104008963A (zh) * | 2013-02-22 | 2014-08-27 | 国际商业机器公司 | 一种在受控衬底剥脱期间促进开裂萌生的方法 |
CN104037059A (zh) * | 2013-03-05 | 2014-09-10 | 国际商业机器公司 | 改善剥脱衬底的表面质量的方法 |
CN104112690B (zh) * | 2013-04-19 | 2017-06-06 | 国际商业机器公司 | 用于衬底分离的裂纹控制 |
US10269643B2 (en) | 2013-05-03 | 2019-04-23 | Siltectra, GmbH | Method and device for the production of wafers with a pre-defined break initiation point |
US10304738B2 (en) | 2013-05-03 | 2019-05-28 | Siltectra | Method and device for the production of wafers with a pre-defined break initiation point |
TWI661478B (zh) * | 2013-05-03 | 2019-06-01 | 德商希爾提克特拉股份有限公司 | 具有預定義破裂觸發點之晶圓製造的方法和裝置 |
US10580699B1 (en) | 2013-05-03 | 2020-03-03 | Siltectra Gmbh | Method and device for the production of wafers with a pre-defined break initiation point |
US10825732B2 (en) | 2013-05-03 | 2020-11-03 | Siltectra Gmbh | Method of producing stresses in a semiconductor wafer |
CN110741427A (zh) * | 2017-11-10 | 2020-01-31 | 深圳市柔宇科技有限公司 | 柔性面板的制作方法、柔性面板和显示装置 |
CN110741427B (zh) * | 2017-11-10 | 2021-10-22 | 深圳市柔宇科技股份有限公司 | 柔性面板的制作方法、柔性面板和显示装置 |
Also Published As
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GB2492444A (en) | 2013-01-02 |
GB201208147D0 (en) | 2012-06-20 |
CN102856232B (zh) | 2015-05-06 |
US20130005116A1 (en) | 2013-01-03 |
US8748296B2 (en) | 2014-06-10 |
GB2492444B (en) | 2013-08-14 |
DE102012210227A1 (de) | 2013-01-03 |
DE102012210227B4 (de) | 2018-01-25 |
DE102012210227A8 (de) | 2013-03-07 |
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