DE102012210227A8 - Abblätterungsverfahren mit Randausschluss zur Verbesserung der Substrat-Wiederverwendbarkeit - Google Patents

Abblätterungsverfahren mit Randausschluss zur Verbesserung der Substrat-Wiederverwendbarkeit Download PDF

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Publication number
DE102012210227A8
DE102012210227A8 DE102012210227A DE102012210227A DE102012210227A8 DE 102012210227 A8 DE102012210227 A8 DE 102012210227A8 DE 102012210227 A DE102012210227 A DE 102012210227A DE 102012210227 A DE102012210227 A DE 102012210227A DE 102012210227 A8 DE102012210227 A8 DE 102012210227A8
Authority
DE
Germany
Prior art keywords
exfoliation
exclusion
border
improve substrate
reusability
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE102012210227A
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English (en)
Other versions
DE102012210227A1 (de
DE102012210227B4 (de
Inventor
Stephen W. Bedell
Keith E. Fogel
Paul A. Lauro
Devendra K. Sadana
Davood Shahrjerdi
Norma Edith Sosa Cortes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalFoundries US Inc
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE102012210227A1 publication Critical patent/DE102012210227A1/de
Publication of DE102012210227A8 publication Critical patent/DE102012210227A8/de
Application granted granted Critical
Publication of DE102012210227B4 publication Critical patent/DE102012210227B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/34—Masking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Laminated Bodies (AREA)
  • Measuring Or Testing Involving Enzymes Or Micro-Organisms (AREA)
DE102012210227.2A 2011-06-29 2012-06-18 Abblätterungsverfahren mit Randausschluss zur Verbesserung der Substrat-Wiederverwendbarkeit Active DE102012210227B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/172,793 2011-06-29
US13/172,793 US8748296B2 (en) 2011-06-29 2011-06-29 Edge-exclusion spalling method for improving substrate reusability

Publications (3)

Publication Number Publication Date
DE102012210227A1 DE102012210227A1 (de) 2013-01-03
DE102012210227A8 true DE102012210227A8 (de) 2013-03-07
DE102012210227B4 DE102012210227B4 (de) 2018-01-25

Family

ID=46396775

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102012210227.2A Active DE102012210227B4 (de) 2011-06-29 2012-06-18 Abblätterungsverfahren mit Randausschluss zur Verbesserung der Substrat-Wiederverwendbarkeit

Country Status (4)

Country Link
US (1) US8748296B2 (de)
CN (1) CN102856232B (de)
DE (1) DE102012210227B4 (de)
GB (1) GB2492444B (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8658444B2 (en) * 2012-05-16 2014-02-25 International Business Machines Corporation Semiconductor active matrix on buried insulator
US9040432B2 (en) 2013-02-22 2015-05-26 International Business Machines Corporation Method for facilitating crack initiation during controlled substrate spalling
US9308714B2 (en) * 2013-03-05 2016-04-12 International Business Machines Corporation Method for improving surface quality of spalled substrates
US8946054B2 (en) * 2013-04-19 2015-02-03 International Business Machines Corporation Crack control for substrate separation
DE102013007672A1 (de) 2013-05-03 2014-11-06 Siltectra Gmbh Verfahren und Vorrichtung zur Waferherstellung mit vordefinierter Bruchauslösestelle
US9058990B1 (en) * 2013-12-19 2015-06-16 International Business Machines Corporation Controlled spalling of group III nitrides containing an embedded spall releasing plane
GB2525904B (en) * 2014-05-08 2018-05-09 Surecore Ltd Memory unit
US9653554B2 (en) 2014-07-21 2017-05-16 Soraa, Inc. Reusable nitride wafer, method of making, and use thereof
KR102192589B1 (ko) * 2014-08-08 2020-12-18 삼성디스플레이 주식회사 플렉서블 디스플레이 장치
DE102015103118A1 (de) * 2014-10-06 2016-04-07 Siltectra Gmbh Splitting-Verfahren und Verwendung eines Materials in einem Splitting-Verfahren
US9578736B2 (en) * 2014-12-23 2017-02-21 International Business Machines Corporation Patterned metallization handle layer for controlled spalling
US9748353B2 (en) 2015-12-31 2017-08-29 International Business Machines Corporation Method of making a gallium nitride device
US9570295B1 (en) 2016-01-29 2017-02-14 International Business Machines Corporation Protective capping layer for spalled gallium nitride
WO2017162800A1 (de) * 2016-03-24 2017-09-28 Siltectra Gmbh Polymer-hybrid-material zur verwendung in einem splitting-verfahren
KR20180050452A (ko) * 2016-11-04 2018-05-15 코닝 인코포레이티드 코팅 과정에서의 글래스 기반 제품의 마스킹 및 고정, 및 이에 의해 제조된 제품
US10419574B2 (en) 2017-08-23 2019-09-17 Micron Technology, Inc. Memory device with a multi-mode communication mechanism
US10601033B2 (en) 2017-09-29 2020-03-24 International Business Machines Corporation High-performance rechargeable batteries having a spalled and textured cathode layer
US10622636B2 (en) 2017-09-29 2020-04-14 International Business Machines Corporation High-capacity rechargeable battery stacks containing a spalled cathode material
US10658531B2 (en) 2017-10-18 2020-05-19 International Business Machines Corporation Spalling techniques for manufacturing photodiodes
WO2019090695A1 (zh) * 2017-11-10 2019-05-16 深圳市柔宇科技有限公司 柔性面板的制作方法、柔性面板和显示装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4582559A (en) 1984-04-27 1986-04-15 Gould Inc. Method of making thin free standing single crystal films
EP1863100A1 (de) * 2006-05-30 2007-12-05 INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM vzw (IMEC) Verfahren zur Herstellung von dünnen Substraten
US20100047959A1 (en) * 2006-08-07 2010-02-25 Emcore Solar Power, Inc. Epitaxial Lift Off on Film Mounted Inverted Metamorphic Multijunction Solar Cells
EP2379440B1 (de) * 2008-12-23 2013-04-17 Siltectra GmbH Verfahren zur Erzeugung dünner, freistehender Schichten aus Festkörpermaterialien mit strukturierten Flächen
US20100310775A1 (en) 2009-06-09 2010-12-09 International Business Machines Corporation Spalling for a Semiconductor Substrate
US8802477B2 (en) * 2009-06-09 2014-08-12 International Business Machines Corporation Heterojunction III-V photovoltaic cell fabrication
US20110048517A1 (en) 2009-06-09 2011-03-03 International Business Machines Corporation Multijunction Photovoltaic Cell Fabrication

Also Published As

Publication number Publication date
GB2492444B (en) 2013-08-14
CN102856232B (zh) 2015-05-06
US20130005116A1 (en) 2013-01-03
GB2492444A (en) 2013-01-02
DE102012210227A1 (de) 2013-01-03
GB201208147D0 (en) 2012-06-20
CN102856232A (zh) 2013-01-02
US8748296B2 (en) 2014-06-10
DE102012210227B4 (de) 2018-01-25

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R081 Change of applicant/patentee

Owner name: GLOBALFOUNDRIES U.S. INC., SANTA CLARA, US

Free format text: FORMER OWNER: INTERNATIONAL BUSINESS MACHINES CORPORATION, ARMONK, N.Y., US

Owner name: GLOBALFOUNDRIES INC., KY

Free format text: FORMER OWNER: INTERNATIONAL BUSINESS MACHINES CORPORATION, ARMONK, N.Y., US

R082 Change of representative

Representative=s name: GRUENECKER PATENT- UND RECHTSANWAELTE PARTG MB, DE

Representative=s name: RICHARDT PATENTANWAELTE PARTG MBB, DE

R081 Change of applicant/patentee

Owner name: GLOBALFOUNDRIES U.S. INC., SANTA CLARA, US

Free format text: FORMER OWNER: GLOBALFOUNDRIES US 2 LLC (N.D.GES.DES STAATES DELAWARE), HOPEWELL JUNCTION, N.Y., US

Owner name: GLOBALFOUNDRIES INC., KY

Free format text: FORMER OWNER: GLOBALFOUNDRIES US 2 LLC (N.D.GES.DES STAATES DELAWARE), HOPEWELL JUNCTION, N.Y., US

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Representative=s name: RICHARDT PATENTANWAELTE PARTG MBB, DE

R018 Grant decision by examination section/examining division
R020 Patent grant now final
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Owner name: GLOBALFOUNDRIES U.S. INC., SANTA CLARA, US

Free format text: FORMER OWNER: GLOBALFOUNDRIES INC., GRAND CAYMAN, KY

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Representative=s name: GRUENECKER PATENT- UND RECHTSANWAELTE PARTG MB, DE