RU2005117970A - Резервуар для приема расплавленного кремния или для плавления кремния и способ его изготовления - Google Patents
Резервуар для приема расплавленного кремния или для плавления кремния и способ его изготовления Download PDFInfo
- Publication number
- RU2005117970A RU2005117970A RU2005117970/15A RU2005117970A RU2005117970A RU 2005117970 A RU2005117970 A RU 2005117970A RU 2005117970/15 A RU2005117970/15 A RU 2005117970/15A RU 2005117970 A RU2005117970 A RU 2005117970A RU 2005117970 A RU2005117970 A RU 2005117970A
- Authority
- RU
- Russia
- Prior art keywords
- silicon
- sub
- nitride
- silicon oxide
- tank
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5053—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
- C04B41/5062—Borides, Nitrides or Silicides
- C04B41/5066—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/87—Ceramics
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
- C23C4/134—Plasma spraying
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
- Y10T428/131—Glass, ceramic, or sintered, fused, fired, or calcined metal oxide or metal carbide containing [e.g., porcelain, brick, cement, etc.]
- Y10T428/1314—Contains fabric, fiber particle, or filament made of glass, ceramic, or sintered, fused, fired, or calcined metal oxide, or metal carbide or other inorganic compound [e.g., fiber glass, mineral fiber, sand, etc.]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Metallurgy (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Structural Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Ceramic Products (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Claims (7)
1. Резервуар для приема расплавленного кремния или для плавления кремния, который имеет напыленное покрытие из кремниевого композитного термета, содержащего металлический кремний, нитрид кремния и оксид кремния, по меньшей мере на части внутренней стенки резервуара для хранения кремния, отличающийся тем, что налыленное покрытие из кремниевого композитного термета имеет следующее отношение концентраций металлического кремния (X) к нитриду кремния (Y) и к оксиду кремния (Z): X:Y:Z=20-50:77-30:3-20.
2. Резервуар по п.1, отличающийся тем, что напыленное покрытие из кремниевого композитного термета образуют за счет напыления материала в виде кремниевого композитного термета, полученного за счет добавки металлического кремния, в качестве связующего материала, в смесь Si2N4 и SiO2.
3. Резервуар по п.1 или 2, отличающийся тем, что он изготовлен из материала, который содержит оксид кремния, нитрид бора и/или графит.
4. Резервуар по п.3, в котором оксид кремния (SiO2) представляет собой уплотненный или спеченный плавленый кварц.
5. Резервуар по п.1, отличающийся тем, что покрытие имеет толщину 20-500 мкм, преимущественно 50-300 мкм.
6. Способ изготовления резервуара для приема расплавленного кремния или для плавления кремния, который предусматривает напыление материала в виде кремниевого композитного термета, который содержит металлический кремний, нитрид кремния и оксид кремния, на внутреннюю стенку указанного резервуара, в результате чего образуется напыленное покрытие из кремниевого композитного термета, причем напыленное покрытие из кремниевого термета имеет следующее отношение концентраций металлического кремния (X) к нитриду кремния (Y) и к оксиду кремния (Z): X:Y:Z=20-50:77-30:3-20.
7. Способ по п.6, в котором указанный резервуар изготавливают из материала, содержащего оксид кремния, нитрид бора и/или графит, преимущественно уплотненный или спеченный плавленый кварц.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2002/013850 WO2004053207A1 (en) | 2002-12-06 | 2002-12-06 | Vessel for holding silicon and method of producing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
RU2005117970A true RU2005117970A (ru) | 2005-11-20 |
RU2303663C2 RU2303663C2 (ru) | 2007-07-27 |
Family
ID=32479689
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
RU2005117970/15A RU2303663C2 (ru) | 2002-12-06 | 2002-12-06 | Резервуар для приема расплавленного кремния или для плавления кремния и способ его изготовления |
Country Status (13)
Country | Link |
---|---|
US (1) | US20060057317A1 (ru) |
EP (1) | EP1570117B1 (ru) |
CN (1) | CN1309879C (ru) |
AT (1) | ATE335094T1 (ru) |
AU (1) | AU2002358101A1 (ru) |
BR (1) | BR0215961A (ru) |
CA (1) | CA2507389A1 (ru) |
DE (1) | DE60213687T2 (ru) |
ES (1) | ES2269794T3 (ru) |
MX (1) | MXPA05006031A (ru) |
RU (1) | RU2303663C2 (ru) |
UA (1) | UA81278C2 (ru) |
WO (1) | WO2004053207A1 (ru) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006002779A1 (de) * | 2004-06-30 | 2006-01-12 | Deutsche Solar Ag | Herstellungsverfahren für kokille mit antihaftbeschichtung |
DE102005028435B4 (de) * | 2004-06-30 | 2011-05-12 | Deutsche Solar Ag | Kokille mit Antihaftbeschichtung ihr Herstellungsverfahren und ihre Verwendung |
DE102005029039B4 (de) * | 2004-07-08 | 2012-07-12 | Deutsche Solar Gmbh | Herstellungsverfahren für Kokille mit Antihaftbeschichtung |
WO2006005416A1 (de) * | 2004-07-08 | 2006-01-19 | Deutsche Solar Ag | Herstellungsverfahren für kokille mit antihaftbeschichtung |
EP1739209A1 (en) * | 2005-07-01 | 2007-01-03 | Vesuvius Crucible Company | Crucible for the crystallization of silicon |
TWI400369B (zh) * | 2005-10-06 | 2013-07-01 | Vesuvius Crucible Co | 用於矽結晶的坩堝及其製造方法 |
DE102005050593A1 (de) * | 2005-10-21 | 2007-04-26 | Esk Ceramics Gmbh & Co. Kg | Dauerhafte siliciumnitridhaltige Hartbeschichtung |
EP1811064A1 (fr) | 2006-01-12 | 2007-07-25 | Vesuvius Crucible Company | Creuset pour le traitement de silicium à l'état fondu |
NO327122B1 (no) * | 2007-03-26 | 2009-04-27 | Elkem Solar As | Beleggingssystem |
US8062704B2 (en) * | 2007-08-02 | 2011-11-22 | Motech Americas, Llc | Silicon release coating, method of making same, and method of using same |
DE102007053284A1 (de) * | 2007-11-08 | 2009-05-20 | Esk Ceramics Gmbh & Co. Kg | Fest haftende siliciumnitridhaltige Trennschicht |
CN101433890B (zh) * | 2008-12-05 | 2010-12-29 | 江阴海润太阳能电力有限公司 | 低压下在石英坩埚内壁上喷涂氮化硅涂层的方法及装置 |
CN101775639B (zh) * | 2009-01-08 | 2012-05-30 | 常熟华融太阳能新型材料有限公司 | 用于多晶硅结晶炉炉壁保护的内衬及其制造方法 |
JP2013512188A (ja) * | 2009-12-01 | 2013-04-11 | ダウ コーニング コーポレーション | 回転成型プロセス |
US9620664B2 (en) * | 2010-05-25 | 2017-04-11 | Mossey Creek Technologies, Inc. | Coating of graphite tooling for manufacture of semiconductors |
WO2011150057A2 (en) | 2010-05-25 | 2011-12-01 | Mossey Creek Solar, LLC | Method of producing a solar cell |
CN101892517B (zh) * | 2010-06-30 | 2013-07-17 | 江西赛维Ldk太阳能高科技有限公司 | 一种多晶硅坩埚涂层制备用浆料以及配置方法 |
TWI403461B (zh) * | 2010-07-21 | 2013-08-01 | Masahiro Hoshino | Method and apparatus for improving yield and yield of metallurgical silicon |
CN102909163A (zh) * | 2011-08-05 | 2013-02-06 | 镇江仁德新能源科技有限公司 | 在多晶硅铸锭用坩埚的内表面上形成涂层的方法 |
CN102358953B (zh) * | 2011-09-28 | 2015-12-09 | 江西赛维Ldk太阳能高科技有限公司 | 一种减少粘埚的坩埚及其制备方法 |
US20130192516A1 (en) * | 2012-01-27 | 2013-08-01 | Memc Singapore Pte. Ltd. (Uen200614794D) | Method of preparing cast silicon by directional solidification |
CN102586856B (zh) * | 2012-02-01 | 2015-03-11 | 江西赛维Ldk太阳能高科技有限公司 | 一种提高硅锭利用率和籽晶使用次数的坩埚及其制备方法 |
FR2989680B1 (fr) | 2012-04-24 | 2014-04-18 | Saint Gobain Ct Recherches | Procede de fabrication d'un creuset en nitrure de silicium |
FR2997419A1 (fr) | 2012-10-31 | 2014-05-02 | Saint Gobain Ct Recherches | Creuset incorporant un revetement sialon. |
CN103011836B (zh) * | 2012-12-03 | 2015-09-16 | 北京中材人工晶体研究院有限公司 | 一种碳材料表面涂层组合物及涂层的制备方法 |
DE102013206993B4 (de) | 2013-04-18 | 2014-12-04 | Morgan Advanced Materials Haldenwanger GmbH | Verfahren zur Beschichtung von Formkörpern aus Quarzgut |
CN104048505B (zh) * | 2014-05-24 | 2016-09-21 | 青岛百顿坩埚有限公司 | 大型承压楔形密封组合式石墨坩埚及其制作方法 |
CN106087048A (zh) * | 2016-08-19 | 2016-11-09 | 西安华晶电子技术股份有限公司 | 一种降低多晶硅铸锭底部氧含量的方法 |
CN106283183A (zh) * | 2016-08-19 | 2017-01-04 | 西安华晶电子技术股份有限公司 | 一种基于氮化硼涂层的多晶硅铸锭工艺 |
WO2023235285A1 (en) * | 2022-06-01 | 2023-12-07 | Globalwafers Co., Ltd. | Methods for forming single crystal silicon ingots with reduced carbon contamination and susceptors for use in such methods |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4090851A (en) * | 1976-10-15 | 1978-05-23 | Rca Corporation | Si3 N4 Coated crucible and die means for growing single crystalline silicon sheets |
US4356152A (en) * | 1981-03-13 | 1982-10-26 | Rca Corporation | Silicon melting crucible |
JPS6148491A (ja) * | 1984-08-17 | 1986-03-10 | 株式会社 ほくさん | カ−ボン型材のコ−テイング膜表面に形成する離型剤層の形成方法 |
DE3639335A1 (de) * | 1986-11-18 | 1988-05-26 | Bayer Ag | Gegenueber metall- und salzschmelzen resistente werkstoffe, ihre herstellung und deren verwendung |
CN87206316U (zh) * | 1987-04-16 | 1987-12-30 | 清华大学 | 氮化硅涂层坩埚 |
WO1998035075A1 (de) * | 1997-02-06 | 1998-08-13 | Bayer Aktiengesellschaft | Mit siliciumschutzschichten versehene schmelztiegel, ein verfahren zum aufbringen der siliciumschutzschicht und deren verwendung |
JP3981538B2 (ja) * | 2001-07-27 | 2007-09-26 | トーカロ株式会社 | シリコン保持容器およびその製造方法 |
-
2002
- 2002-06-12 UA UAA200506630A patent/UA81278C2/uk unknown
- 2002-12-06 DE DE60213687T patent/DE60213687T2/de not_active Expired - Fee Related
- 2002-12-06 ES ES02791784T patent/ES2269794T3/es not_active Expired - Lifetime
- 2002-12-06 RU RU2005117970/15A patent/RU2303663C2/ru not_active IP Right Cessation
- 2002-12-06 US US10/537,200 patent/US20060057317A1/en not_active Abandoned
- 2002-12-06 CN CNB028301935A patent/CN1309879C/zh not_active Expired - Fee Related
- 2002-12-06 WO PCT/EP2002/013850 patent/WO2004053207A1/en not_active Application Discontinuation
- 2002-12-06 AT AT02791784T patent/ATE335094T1/de not_active IP Right Cessation
- 2002-12-06 CA CA002507389A patent/CA2507389A1/en not_active Abandoned
- 2002-12-06 BR BR0215961-9A patent/BR0215961A/pt not_active Application Discontinuation
- 2002-12-06 MX MXPA05006031A patent/MXPA05006031A/es unknown
- 2002-12-06 EP EP02791784A patent/EP1570117B1/en not_active Expired - Lifetime
- 2002-12-06 AU AU2002358101A patent/AU2002358101A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
UA81278C2 (en) | 2007-12-25 |
EP1570117A1 (en) | 2005-09-07 |
BR0215961A (pt) | 2005-09-13 |
CN1742120A (zh) | 2006-03-01 |
CA2507389A1 (en) | 2004-06-24 |
MXPA05006031A (es) | 2005-08-18 |
DE60213687D1 (de) | 2006-09-14 |
AU2002358101A1 (en) | 2004-06-30 |
RU2303663C2 (ru) | 2007-07-27 |
EP1570117B1 (en) | 2006-08-02 |
WO2004053207A1 (en) | 2004-06-24 |
DE60213687T2 (de) | 2007-10-18 |
US20060057317A1 (en) | 2006-03-16 |
CN1309879C (zh) | 2007-04-11 |
ATE335094T1 (de) | 2006-08-15 |
ES2269794T3 (es) | 2007-04-01 |
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