BR0215961A - Recipiente para receber ou fundir silìcio em fusão e método de produzir o mesmo - Google Patents

Recipiente para receber ou fundir silìcio em fusão e método de produzir o mesmo

Info

Publication number
BR0215961A
BR0215961A BR0215961-9A BR0215961A BR0215961A BR 0215961 A BR0215961 A BR 0215961A BR 0215961 A BR0215961 A BR 0215961A BR 0215961 A BR0215961 A BR 0215961A
Authority
BR
Brazil
Prior art keywords
melting
silicon
container
producing
same
Prior art date
Application number
BR0215961-9A
Other languages
English (en)
Inventor
Koichi Shimizu
Frederic Caillaud
Kazumi Tani
Yoshifumi Kobayashi
Original Assignee
Vesuvius France Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vesuvius France Sa filed Critical Vesuvius France Sa
Publication of BR0215961A publication Critical patent/BR0215961A/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5053—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
    • C04B41/5062—Borides, Nitrides or Silicides
    • C04B41/5066—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/87—Ceramics
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/134—Plasma spraying
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
    • Y10T428/131—Glass, ceramic, or sintered, fused, fired, or calcined metal oxide or metal carbide containing [e.g., porcelain, brick, cement, etc.]
    • Y10T428/1314—Contains fabric, fiber particle, or filament made of glass, ceramic, or sintered, fused, fired, or calcined metal oxide, or metal carbide or other inorganic compound [e.g., fiber glass, mineral fiber, sand, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Metallurgy (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Structural Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Ceramic Products (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

"RECIPIENTE PARA RECEBER OU FUNDIR SILìCIO EM FUSãO E MéTODO DE PRODUZIR O MESMO". A invenção refere-se a um recipiente para conter um banho de silício em fusão, o qual pode impedir de maneira eficaz a contaminação de uma solução de banho de silício em fusão e ter excelentes sinterabilidade, resistência mecânica e produtividade. O interior do recipiente é formado por um revestimento pulverizado por pulverização de um thennet compósito de silício, o qual consiste em silício metálico (MSi), nitreto de silício (Si~ 3~N~ 4~) e óxido de silício (SiO~ 2~).
BR0215961-9A 2002-12-06 2002-12-06 Recipiente para receber ou fundir silìcio em fusão e método de produzir o mesmo BR0215961A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2002/013850 WO2004053207A1 (en) 2002-12-06 2002-12-06 Vessel for holding silicon and method of producing the same

Publications (1)

Publication Number Publication Date
BR0215961A true BR0215961A (pt) 2005-09-13

Family

ID=32479689

Family Applications (1)

Application Number Title Priority Date Filing Date
BR0215961-9A BR0215961A (pt) 2002-12-06 2002-12-06 Recipiente para receber ou fundir silìcio em fusão e método de produzir o mesmo

Country Status (13)

Country Link
US (1) US20060057317A1 (pt)
EP (1) EP1570117B1 (pt)
CN (1) CN1309879C (pt)
AT (1) ATE335094T1 (pt)
AU (1) AU2002358101A1 (pt)
BR (1) BR0215961A (pt)
CA (1) CA2507389A1 (pt)
DE (1) DE60213687T2 (pt)
ES (1) ES2269794T3 (pt)
MX (1) MXPA05006031A (pt)
RU (1) RU2303663C2 (pt)
UA (1) UA81278C2 (pt)
WO (1) WO2004053207A1 (pt)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
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WO2006002779A1 (de) * 2004-06-30 2006-01-12 Deutsche Solar Ag Herstellungsverfahren für kokille mit antihaftbeschichtung
DE102005028435B4 (de) * 2004-06-30 2011-05-12 Deutsche Solar Ag Kokille mit Antihaftbeschichtung ihr Herstellungsverfahren und ihre Verwendung
DE102005029039B4 (de) * 2004-07-08 2012-07-12 Deutsche Solar Gmbh Herstellungsverfahren für Kokille mit Antihaftbeschichtung
WO2006005416A1 (de) * 2004-07-08 2006-01-19 Deutsche Solar Ag Herstellungsverfahren für kokille mit antihaftbeschichtung
EP1739209A1 (en) * 2005-07-01 2007-01-03 Vesuvius Crucible Company Crucible for the crystallization of silicon
TWI400369B (zh) * 2005-10-06 2013-07-01 Vesuvius Crucible Co 用於矽結晶的坩堝及其製造方法
DE102005050593A1 (de) * 2005-10-21 2007-04-26 Esk Ceramics Gmbh & Co. Kg Dauerhafte siliciumnitridhaltige Hartbeschichtung
EP1811064A1 (fr) 2006-01-12 2007-07-25 Vesuvius Crucible Company Creuset pour le traitement de silicium à l'état fondu
NO327122B1 (no) * 2007-03-26 2009-04-27 Elkem Solar As Beleggingssystem
US8062704B2 (en) * 2007-08-02 2011-11-22 Motech Americas, Llc Silicon release coating, method of making same, and method of using same
DE102007053284A1 (de) * 2007-11-08 2009-05-20 Esk Ceramics Gmbh & Co. Kg Fest haftende siliciumnitridhaltige Trennschicht
CN101433890B (zh) * 2008-12-05 2010-12-29 江阴海润太阳能电力有限公司 低压下在石英坩埚内壁上喷涂氮化硅涂层的方法及装置
CN101775639B (zh) * 2009-01-08 2012-05-30 常熟华融太阳能新型材料有限公司 用于多晶硅结晶炉炉壁保护的内衬及其制造方法
JP2013512188A (ja) * 2009-12-01 2013-04-11 ダウ コーニング コーポレーション 回転成型プロセス
US9620664B2 (en) * 2010-05-25 2017-04-11 Mossey Creek Technologies, Inc. Coating of graphite tooling for manufacture of semiconductors
WO2011150057A2 (en) 2010-05-25 2011-12-01 Mossey Creek Solar, LLC Method of producing a solar cell
CN101892517B (zh) * 2010-06-30 2013-07-17 江西赛维Ldk太阳能高科技有限公司 一种多晶硅坩埚涂层制备用浆料以及配置方法
TWI403461B (zh) * 2010-07-21 2013-08-01 Masahiro Hoshino Method and apparatus for improving yield and yield of metallurgical silicon
CN102909163A (zh) * 2011-08-05 2013-02-06 镇江仁德新能源科技有限公司 在多晶硅铸锭用坩埚的内表面上形成涂层的方法
CN102358953B (zh) * 2011-09-28 2015-12-09 江西赛维Ldk太阳能高科技有限公司 一种减少粘埚的坩埚及其制备方法
US20130192516A1 (en) * 2012-01-27 2013-08-01 Memc Singapore Pte. Ltd. (Uen200614794D) Method of preparing cast silicon by directional solidification
CN102586856B (zh) * 2012-02-01 2015-03-11 江西赛维Ldk太阳能高科技有限公司 一种提高硅锭利用率和籽晶使用次数的坩埚及其制备方法
FR2989680B1 (fr) 2012-04-24 2014-04-18 Saint Gobain Ct Recherches Procede de fabrication d'un creuset en nitrure de silicium
FR2997419A1 (fr) 2012-10-31 2014-05-02 Saint Gobain Ct Recherches Creuset incorporant un revetement sialon.
CN103011836B (zh) * 2012-12-03 2015-09-16 北京中材人工晶体研究院有限公司 一种碳材料表面涂层组合物及涂层的制备方法
DE102013206993B4 (de) 2013-04-18 2014-12-04 Morgan Advanced Materials Haldenwanger GmbH Verfahren zur Beschichtung von Formkörpern aus Quarzgut
CN104048505B (zh) * 2014-05-24 2016-09-21 青岛百顿坩埚有限公司 大型承压楔形密封组合式石墨坩埚及其制作方法
CN106087048A (zh) * 2016-08-19 2016-11-09 西安华晶电子技术股份有限公司 一种降低多晶硅铸锭底部氧含量的方法
CN106283183A (zh) * 2016-08-19 2017-01-04 西安华晶电子技术股份有限公司 一种基于氮化硼涂层的多晶硅铸锭工艺
WO2023235285A1 (en) * 2022-06-01 2023-12-07 Globalwafers Co., Ltd. Methods for forming single crystal silicon ingots with reduced carbon contamination and susceptors for use in such methods

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Also Published As

Publication number Publication date
UA81278C2 (en) 2007-12-25
EP1570117A1 (en) 2005-09-07
CN1742120A (zh) 2006-03-01
CA2507389A1 (en) 2004-06-24
MXPA05006031A (es) 2005-08-18
RU2005117970A (ru) 2005-11-20
DE60213687D1 (de) 2006-09-14
AU2002358101A1 (en) 2004-06-30
RU2303663C2 (ru) 2007-07-27
EP1570117B1 (en) 2006-08-02
WO2004053207A1 (en) 2004-06-24
DE60213687T2 (de) 2007-10-18
US20060057317A1 (en) 2006-03-16
CN1309879C (zh) 2007-04-11
ATE335094T1 (de) 2006-08-15
ES2269794T3 (es) 2007-04-01

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Legal Events

Date Code Title Description
B06A Patent application procedure suspended [chapter 6.1 patent gazette]
B11B Dismissal acc. art. 36, par 1 of ipl - no reply within 90 days to fullfil the necessary requirements