UA81278C2 - Vessel for holding a silicon and method for its making - Google Patents
Vessel for holding a silicon and method for its making Download PDFInfo
- Publication number
- UA81278C2 UA81278C2 UAA200506630A UA2005006630A UA81278C2 UA 81278 C2 UA81278 C2 UA 81278C2 UA A200506630 A UAA200506630 A UA A200506630A UA 2005006630 A UA2005006630 A UA 2005006630A UA 81278 C2 UA81278 C2 UA 81278C2
- Authority
- UA
- Ukraine
- Prior art keywords
- silicon
- vessel
- coating
- nitride
- complex
- Prior art date
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 99
- 239000010703 silicon Substances 0.000 title claims abstract description 99
- 238000000034 method Methods 0.000 title claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 100
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 51
- 239000011248 coating agent Substances 0.000 claims abstract description 44
- 238000000576 coating method Methods 0.000 claims abstract description 40
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 24
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims description 40
- 239000005350 fused silica glass Substances 0.000 claims description 17
- 238000004544 sputter deposition Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 9
- 230000008018 melting Effects 0.000 claims description 9
- 150000004767 nitrides Chemical class 0.000 claims description 9
- 229910052582 BN Inorganic materials 0.000 claims description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910002804 graphite Inorganic materials 0.000 claims description 5
- 239000010439 graphite Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims 4
- 241000256602 Isoptera Species 0.000 claims 1
- 238000011109 contamination Methods 0.000 abstract description 8
- 229910052751 metal Inorganic materials 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 7
- 238000005507 spraying Methods 0.000 abstract description 6
- 239000002131 composite material Substances 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 24
- 239000010410 layer Substances 0.000 description 9
- 239000012768 molten material Substances 0.000 description 7
- 239000002344 surface layer Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 238000005266 casting Methods 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 206010040844 Skin exfoliation Diseases 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000002294 plasma sputter deposition Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000006004 Quartz sand Substances 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000012770 industrial material Substances 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000007670 refining Methods 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010283 detonation spraying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 235000011389 fruit/vegetable juice Nutrition 0.000 description 1
- 238000010289 gas flame spraying Methods 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000010413 mother solution Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000000075 oxide glass Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000013014 purified material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5053—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
- C04B41/5062—Borides, Nitrides or Silicides
- C04B41/5066—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/87—Ceramics
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
- C23C4/134—Plasma spraying
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
- Y10T428/131—Glass, ceramic, or sintered, fused, fired, or calcined metal oxide or metal carbide containing [e.g., porcelain, brick, cement, etc.]
- Y10T428/1314—Contains fabric, fiber particle, or filament made of glass, ceramic, or sintered, fused, fired, or calcined metal oxide, or metal carbide or other inorganic compound [e.g., fiber glass, mineral fiber, sand, etc.]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Plasma & Fusion (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Ceramic Products (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2002/013850 WO2004053207A1 (en) | 2002-12-06 | 2002-12-06 | Vessel for holding silicon and method of producing the same |
Publications (1)
Publication Number | Publication Date |
---|---|
UA81278C2 true UA81278C2 (en) | 2007-12-25 |
Family
ID=32479689
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
UAA200506630A UA81278C2 (en) | 2002-12-06 | 2002-06-12 | Vessel for holding a silicon and method for its making |
Country Status (13)
Country | Link |
---|---|
US (1) | US20060057317A1 (pt) |
EP (1) | EP1570117B1 (pt) |
CN (1) | CN1309879C (pt) |
AT (1) | ATE335094T1 (pt) |
AU (1) | AU2002358101A1 (pt) |
BR (1) | BR0215961A (pt) |
CA (1) | CA2507389A1 (pt) |
DE (1) | DE60213687T2 (pt) |
ES (1) | ES2269794T3 (pt) |
MX (1) | MXPA05006031A (pt) |
RU (1) | RU2303663C2 (pt) |
UA (1) | UA81278C2 (pt) |
WO (1) | WO2004053207A1 (pt) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005028435B4 (de) * | 2004-06-30 | 2011-05-12 | Deutsche Solar Ag | Kokille mit Antihaftbeschichtung ihr Herstellungsverfahren und ihre Verwendung |
WO2006002779A1 (de) * | 2004-06-30 | 2006-01-12 | Deutsche Solar Ag | Herstellungsverfahren für kokille mit antihaftbeschichtung |
DE102005029039B4 (de) * | 2004-07-08 | 2012-07-12 | Deutsche Solar Gmbh | Herstellungsverfahren für Kokille mit Antihaftbeschichtung |
WO2006005416A1 (de) * | 2004-07-08 | 2006-01-19 | Deutsche Solar Ag | Herstellungsverfahren für kokille mit antihaftbeschichtung |
EP1739209A1 (en) * | 2005-07-01 | 2007-01-03 | Vesuvius Crucible Company | Crucible for the crystallization of silicon |
TWI400369B (zh) * | 2005-10-06 | 2013-07-01 | Vesuvius Crucible Co | 用於矽結晶的坩堝及其製造方法 |
DE102005050593A1 (de) | 2005-10-21 | 2007-04-26 | Esk Ceramics Gmbh & Co. Kg | Dauerhafte siliciumnitridhaltige Hartbeschichtung |
EP1811064A1 (fr) | 2006-01-12 | 2007-07-25 | Vesuvius Crucible Company | Creuset pour le traitement de silicium à l'état fondu |
NO327122B1 (no) * | 2007-03-26 | 2009-04-27 | Elkem Solar As | Beleggingssystem |
US8062704B2 (en) * | 2007-08-02 | 2011-11-22 | Motech Americas, Llc | Silicon release coating, method of making same, and method of using same |
DE102007053284A1 (de) * | 2007-11-08 | 2009-05-20 | Esk Ceramics Gmbh & Co. Kg | Fest haftende siliciumnitridhaltige Trennschicht |
CN101433890B (zh) * | 2008-12-05 | 2010-12-29 | 江阴海润太阳能电力有限公司 | 低压下在石英坩埚内壁上喷涂氮化硅涂层的方法及装置 |
CN101775639B (zh) * | 2009-01-08 | 2012-05-30 | 常熟华融太阳能新型材料有限公司 | 用于多晶硅结晶炉炉壁保护的内衬及其制造方法 |
CN102639439B (zh) * | 2009-12-01 | 2014-05-07 | 道康宁公司 | 旋转铸造工艺 |
WO2011150057A2 (en) * | 2010-05-25 | 2011-12-01 | Mossey Creek Solar, LLC | Method of producing a solar cell |
US9620664B2 (en) * | 2010-05-25 | 2017-04-11 | Mossey Creek Technologies, Inc. | Coating of graphite tooling for manufacture of semiconductors |
CN101892517B (zh) * | 2010-06-30 | 2013-07-17 | 江西赛维Ldk太阳能高科技有限公司 | 一种多晶硅坩埚涂层制备用浆料以及配置方法 |
TWI403461B (zh) * | 2010-07-21 | 2013-08-01 | Masahiro Hoshino | Method and apparatus for improving yield and yield of metallurgical silicon |
CN102909163A (zh) * | 2011-08-05 | 2013-02-06 | 镇江仁德新能源科技有限公司 | 在多晶硅铸锭用坩埚的内表面上形成涂层的方法 |
CN102358953B (zh) * | 2011-09-28 | 2015-12-09 | 江西赛维Ldk太阳能高科技有限公司 | 一种减少粘埚的坩埚及其制备方法 |
US20130192516A1 (en) * | 2012-01-27 | 2013-08-01 | Memc Singapore Pte. Ltd. (Uen200614794D) | Method of preparing cast silicon by directional solidification |
CN102586856B (zh) * | 2012-02-01 | 2015-03-11 | 江西赛维Ldk太阳能高科技有限公司 | 一种提高硅锭利用率和籽晶使用次数的坩埚及其制备方法 |
FR2989680B1 (fr) * | 2012-04-24 | 2014-04-18 | Saint Gobain Ct Recherches | Procede de fabrication d'un creuset en nitrure de silicium |
FR2997419A1 (fr) | 2012-10-31 | 2014-05-02 | Saint Gobain Ct Recherches | Creuset incorporant un revetement sialon. |
CN103011836B (zh) * | 2012-12-03 | 2015-09-16 | 北京中材人工晶体研究院有限公司 | 一种碳材料表面涂层组合物及涂层的制备方法 |
DE102013206993B4 (de) | 2013-04-18 | 2014-12-04 | Morgan Advanced Materials Haldenwanger GmbH | Verfahren zur Beschichtung von Formkörpern aus Quarzgut |
CN104048505B (zh) * | 2014-05-24 | 2016-09-21 | 青岛百顿坩埚有限公司 | 大型承压楔形密封组合式石墨坩埚及其制作方法 |
CN106087048A (zh) * | 2016-08-19 | 2016-11-09 | 西安华晶电子技术股份有限公司 | 一种降低多晶硅铸锭底部氧含量的方法 |
CN106283183A (zh) * | 2016-08-19 | 2017-01-04 | 西安华晶电子技术股份有限公司 | 一种基于氮化硼涂层的多晶硅铸锭工艺 |
WO2023235285A1 (en) * | 2022-06-01 | 2023-12-07 | Globalwafers Co., Ltd. | Methods for forming single crystal silicon ingots with reduced carbon contamination and susceptors for use in such methods |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4090851A (en) * | 1976-10-15 | 1978-05-23 | Rca Corporation | Si3 N4 Coated crucible and die means for growing single crystalline silicon sheets |
US4356152A (en) * | 1981-03-13 | 1982-10-26 | Rca Corporation | Silicon melting crucible |
JPS6148491A (ja) * | 1984-08-17 | 1986-03-10 | 株式会社 ほくさん | カ−ボン型材のコ−テイング膜表面に形成する離型剤層の形成方法 |
DE3639335A1 (de) * | 1986-11-18 | 1988-05-26 | Bayer Ag | Gegenueber metall- und salzschmelzen resistente werkstoffe, ihre herstellung und deren verwendung |
CN87206316U (zh) * | 1987-04-16 | 1987-12-30 | 清华大学 | 氮化硅涂层坩埚 |
DE59801041D1 (de) * | 1997-02-06 | 2001-08-23 | Solar Gmbh Deutsche | Mit siliciumschutzschichten versehene schmelztiegel, ein verfahren zum aufbringen der siliciumschutzschicht und deren verwendung |
JP3981538B2 (ja) * | 2001-07-27 | 2007-09-26 | トーカロ株式会社 | シリコン保持容器およびその製造方法 |
-
2002
- 2002-06-12 UA UAA200506630A patent/UA81278C2/uk unknown
- 2002-12-06 RU RU2005117970/15A patent/RU2303663C2/ru not_active IP Right Cessation
- 2002-12-06 DE DE60213687T patent/DE60213687T2/de not_active Expired - Fee Related
- 2002-12-06 CA CA002507389A patent/CA2507389A1/en not_active Abandoned
- 2002-12-06 EP EP02791784A patent/EP1570117B1/en not_active Expired - Lifetime
- 2002-12-06 AU AU2002358101A patent/AU2002358101A1/en not_active Abandoned
- 2002-12-06 CN CNB028301935A patent/CN1309879C/zh not_active Expired - Fee Related
- 2002-12-06 BR BR0215961-9A patent/BR0215961A/pt not_active Application Discontinuation
- 2002-12-06 MX MXPA05006031A patent/MXPA05006031A/es unknown
- 2002-12-06 WO PCT/EP2002/013850 patent/WO2004053207A1/en not_active Application Discontinuation
- 2002-12-06 AT AT02791784T patent/ATE335094T1/de not_active IP Right Cessation
- 2002-12-06 ES ES02791784T patent/ES2269794T3/es not_active Expired - Lifetime
- 2002-12-06 US US10/537,200 patent/US20060057317A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
BR0215961A (pt) | 2005-09-13 |
MXPA05006031A (es) | 2005-08-18 |
ES2269794T3 (es) | 2007-04-01 |
CN1309879C (zh) | 2007-04-11 |
WO2004053207A1 (en) | 2004-06-24 |
DE60213687T2 (de) | 2007-10-18 |
DE60213687D1 (de) | 2006-09-14 |
US20060057317A1 (en) | 2006-03-16 |
ATE335094T1 (de) | 2006-08-15 |
CA2507389A1 (en) | 2004-06-24 |
CN1742120A (zh) | 2006-03-01 |
EP1570117B1 (en) | 2006-08-02 |
RU2005117970A (ru) | 2005-11-20 |
EP1570117A1 (en) | 2005-09-07 |
RU2303663C2 (ru) | 2007-07-27 |
AU2002358101A1 (en) | 2004-06-30 |
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