PT3594952T - Gestão de atualização para memória flash - Google Patents

Gestão de atualização para memória flash

Info

Publication number
PT3594952T
PT3594952T PT191888965T PT19188896T PT3594952T PT 3594952 T PT3594952 T PT 3594952T PT 191888965 T PT191888965 T PT 191888965T PT 19188896 T PT19188896 T PT 19188896T PT 3594952 T PT3594952 T PT 3594952T
Authority
PT
Portugal
Prior art keywords
flash memory
managing refresh
refresh
managing
flash
Prior art date
Application number
PT191888965T
Other languages
English (en)
Portuguese (pt)
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of PT3594952T publication Critical patent/PT3594952T/pt

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Memory System (AREA)
  • Dram (AREA)
PT191888965T 2016-06-20 2017-06-07 Gestão de atualização para memória flash PT3594952T (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662352393P 2016-06-20 2016-06-20
US15/615,827 US10199115B2 (en) 2016-06-20 2017-06-06 Managing refresh for flash memory

Publications (1)

Publication Number Publication Date
PT3594952T true PT3594952T (pt) 2026-04-21

Family

ID=60659776

Family Applications (1)

Application Number Title Priority Date Filing Date
PT191888965T PT3594952T (pt) 2016-06-20 2017-06-07 Gestão de atualização para memória flash

Country Status (13)

Country Link
US (2) US10199115B2 (enExample)
EP (3) EP3472840B1 (enExample)
JP (2) JP7213690B2 (enExample)
KR (1) KR102508868B1 (enExample)
CN (2) CN109328386B (enExample)
BR (1) BR112018075661A2 (enExample)
CA (1) CA3026804C (enExample)
DK (1) DK3594952T3 (enExample)
ES (2) ES2874279T3 (enExample)
FI (1) FI3594952T3 (enExample)
PL (1) PL3594952T3 (enExample)
PT (1) PT3594952T (enExample)
WO (1) WO2017222818A1 (enExample)

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US10761727B2 (en) * 2018-11-19 2020-09-01 Micron Technology, Inc. Scan frequency modulation based on memory density or block usage
US10725706B1 (en) * 2019-01-23 2020-07-28 Qualcomm Incorporated Apparatus and method of scheduling universal flash storage refresh operations according to a refresh handover mechanism
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US11404131B2 (en) * 2019-07-12 2022-08-02 Micron Technology, Inc. Decision for executing full-memory refresh during memory sub-system power-on stage
US11037641B1 (en) * 2019-12-05 2021-06-15 Sandisk Technologies Llc Temperature and cycling dependent refresh operation for memory cells
US11500567B2 (en) 2019-12-06 2022-11-15 Micron Technology, Inc. Configuring partitions of a memory sub-system for different data
US11475929B2 (en) 2020-02-27 2022-10-18 Taiwan Semiconductor Manufacturing Company, Ltd. Memory refresh
DE102020133713A1 (de) * 2020-02-27 2021-09-02 Taiwan Semiconductor Manufacturing Co., Ltd. Speicheraktualisierung
CN111798906A (zh) * 2020-06-29 2020-10-20 深圳市芯天下技术有限公司 提高非型闪存数据保持能力方法、系统、存储介质和终端
US12327046B2 (en) 2021-06-25 2025-06-10 SanDisk Technologies, Inc. Data retention-specific refresh read
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US12237031B2 (en) * 2022-06-01 2025-02-25 Micron Technology, Inc. Refresh rate selection for a memory built-in self-test
US12282687B2 (en) * 2022-06-09 2025-04-22 Micron Technology, Inc. Prioritization of background media management operations in memory systems
CN116312673B (zh) * 2023-03-16 2024-08-06 海光集成电路设计(北京)有限公司 一种数据自刷新电路、芯片及电子设备
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US20260186958A1 (en) * 2024-12-30 2026-07-02 SK Hynix NAND Product Solutions Corp. (dba Solidigm) Flexible background data refresh architecture

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KR20140076735A (ko) * 2012-12-13 2014-06-23 삼성전자주식회사 휘발성 메모리 장치 및 메모리 시스템
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KR101601643B1 (ko) * 2013-11-08 2016-03-09 주식회사 피델릭스 효율적으로 리프레쉬 동작을 수행하는 플래시 메모리 장치
US9817749B2 (en) 2013-12-04 2017-11-14 Sandisk Technologies Llc Apparatus and method of offloading processing from a data storage device to a host device
KR102289001B1 (ko) * 2014-06-09 2021-08-13 삼성전자주식회사 솔리드 스테이드 드라이브 및 그것의 동작 방법
US10199115B2 (en) * 2016-06-20 2019-02-05 Qualcomm Incorporated Managing refresh for flash memory

Also Published As

Publication number Publication date
WO2017222818A1 (en) 2017-12-28
KR102508868B1 (ko) 2023-03-09
US20190066811A1 (en) 2019-02-28
JP2019522284A (ja) 2019-08-08
CN109328386A (zh) 2019-02-12
CN114758711A (zh) 2022-07-15
EP3472840A1 (en) 2019-04-24
FI3594952T3 (fi) 2026-04-17
EP3594952A1 (en) 2020-01-15
PL3594952T3 (pl) 2026-06-01
EP4682887A2 (en) 2026-01-21
CN109328386B (zh) 2022-04-29
EP4682887A3 (en) 2026-04-22
US10199115B2 (en) 2019-02-05
CA3026804A1 (en) 2017-12-28
BR112018075661A2 (pt) 2019-04-09
KR20190016968A (ko) 2019-02-19
ES3067989T3 (en) 2026-05-26
JP2022070884A (ja) 2022-05-13
JP7213690B2 (ja) 2023-01-27
EP3472840B1 (en) 2021-02-24
JP7348325B2 (ja) 2023-09-20
DK3594952T3 (da) 2026-04-20
EP3594952B1 (en) 2026-01-21
US10360987B2 (en) 2019-07-23
ES2874279T3 (es) 2021-11-04
US20170365352A1 (en) 2017-12-21
CA3026804C (en) 2023-09-05

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