PL3780069T3 - Kompozycja do polerowania podłoża półprzewodnikowego ze związku galu - Google Patents

Kompozycja do polerowania podłoża półprzewodnikowego ze związku galu

Info

Publication number
PL3780069T3
PL3780069T3 PL19776881.5T PL19776881T PL3780069T3 PL 3780069 T3 PL3780069 T3 PL 3780069T3 PL 19776881 T PL19776881 T PL 19776881T PL 3780069 T3 PL3780069 T3 PL 3780069T3
Authority
PL
Poland
Prior art keywords
polishing
composition
semiconductor substrate
substrate made
gallium compound
Prior art date
Application number
PL19776881.5T
Other languages
English (en)
Inventor
Hiroyuki Oda
Hiroki KON
Naoto Noguchi
Shinichiro Takami
Original Assignee
Fujimi Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Incorporated filed Critical Fujimi Incorporated
Publication of PL3780069T3 publication Critical patent/PL3780069T3/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
PL19776881.5T 2018-03-28 2019-03-22 Kompozycja do polerowania podłoża półprzewodnikowego ze związku galu PL3780069T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018061192 2018-03-28
JP2018061193 2018-03-28
PCT/JP2019/011978 WO2019188747A1 (ja) 2018-03-28 2019-03-22 ガリウム化合物系半導体基板研磨用組成物

Publications (1)

Publication Number Publication Date
PL3780069T3 true PL3780069T3 (pl) 2025-04-07

Family

ID=68058951

Family Applications (1)

Application Number Title Priority Date Filing Date
PL19776881.5T PL3780069T3 (pl) 2018-03-28 2019-03-22 Kompozycja do polerowania podłoża półprzewodnikowego ze związku galu

Country Status (8)

Country Link
US (2) US20210024781A1 (pl)
EP (1) EP3780069B1 (pl)
JP (1) JP7424967B2 (pl)
KR (1) KR20200135851A (pl)
CN (1) CN111919286A (pl)
PL (1) PL3780069T3 (pl)
TW (1) TW201942321A (pl)
WO (1) WO2019188747A1 (pl)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210348028A1 (en) * 2018-09-28 2021-11-11 Fujimi Incorporated Composition for polishing gallium oxide substrate
WO2020194944A1 (ja) * 2019-03-27 2020-10-01 Ａｇｃ株式会社 酸化ガリウム基板の製造方法、および酸化ガリウム基板用の研磨スラリー
CN113646470B (zh) * 2019-04-08 2025-04-11 Ａｇｃ株式会社 氧化镓基板以及氧化镓基板的制造方法
JP2021082642A (ja) * 2019-11-15 2021-05-27 株式会社フジミインコーポレーテッド 複合元素含有単結晶基板の研磨方法および研磨用セット
CN111180314A (zh) * 2020-01-16 2020-05-19 中国科学院微电子研究所 一种氧化镓基场效应管的工艺改进方法
US20230235194A1 (en) * 2020-05-27 2023-07-27 Fujimi Incorporated Polishing method and polishing composition set
JP7547920B2 (ja) * 2020-10-19 2024-09-10 株式会社レゾナック ＳｉＣ基板の研磨方法
US20240217868A1 (en) * 2022-12-29 2024-07-04 Industrial Technology Research Institute Method of performing selective etch on array substrate

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JPS5116305B2 (pl) 1972-07-13 1976-05-22
JPH02262956A (ja) * 1989-04-04 1990-10-25 Nippon Mining Co Ltd ガリウム砒素基板用研磨剤
TW200613485A (en) * 2004-03-22 2006-05-01 Kao Corp Polishing composition
JP4555752B2 (ja) * 2005-08-31 2010-10-06 山口精研工業株式会社 半導体ウェーハ研磨液組成物及び半導体ウェーハ研磨方法
JP2007109777A (ja) * 2005-10-12 2007-04-26 Matsushita Electric Ind Co Ltd ＧａＮ化合物半導体基板のメカノケミカル研磨方法及び研磨装置
US8283694B2 (en) * 2006-10-19 2012-10-09 Sumitomo Electric Industries, Ltd. GaN substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device
JP4367494B2 (ja) * 2007-02-09 2009-11-18 住友電気工業株式会社 ＧａＡｓウエハの化学機械研磨方法
JP4552968B2 (ja) * 2007-05-29 2010-09-29 住友電気工業株式会社 化合物半導体基板の研磨方法、化合物半導体基板、化合物半導体エピ基板の製造方法および化合物半導体エピ基板
CN101775257A (zh) * 2009-01-14 2010-07-14 Axt公司 一种用于GaAs晶片的粗抛光溶液和粗抛光方法
JP5900079B2 (ja) 2012-03-23 2016-04-06 三菱化学株式会社 ポリシングスラリー、及びその製造方法、並びに第１３族窒化物基板の製造方法
US8778211B2 (en) * 2012-07-17 2014-07-15 Cabot Microelectronics Corporation GST CMP slurries
JP6222907B2 (ja) * 2012-09-06 2017-11-01 株式会社フジミインコーポレーテッド 研磨用組成物
JP5696767B2 (ja) * 2013-11-22 2015-04-08 三菱化学株式会社 自立基板、およびその製造方法
JP6179418B2 (ja) * 2014-02-13 2017-08-16 三菱ケミカル株式会社 窒化物半導体基板の製造方法
JP2015189829A (ja) * 2014-03-27 2015-11-02 株式会社フジミインコーポレーテッド 研磨用組成物
JP6559410B2 (ja) * 2014-09-30 2019-08-14 株式会社フジミインコーポレーテッド 研磨用組成物
JP6480139B2 (ja) * 2014-09-30 2019-03-06 株式会社フジミインコーポレーテッド 研磨用組成物
JP6482234B2 (ja) * 2014-10-22 2019-03-13 株式会社フジミインコーポレーテッド 研磨用組成物
JP6376599B2 (ja) * 2014-12-26 2018-08-22 花王株式会社 シリカ分散液
KR102645587B1 (ko) * 2016-02-29 2024-03-11 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물 및 이것을 사용한 연마 방법
JP6750876B2 (ja) 2016-10-07 2020-09-02 キヤノン株式会社 固体撮像装置及びその駆動方法
JP6874318B2 (ja) 2016-10-07 2021-05-19 大日本印刷株式会社 電子情報記憶媒体、ｉｃカード、サポート情報更新方法、及びサポート情報更新プログラム

Also Published As

Publication number Publication date
TW201942321A (zh) 2019-11-01
US20230063355A1 (en) 2023-03-02
EP3780069B1 (en) 2024-12-11
WO2019188747A1 (ja) 2019-10-03
EP3780069A1 (en) 2021-02-17
US20210024781A1 (en) 2021-01-28
CN111919286A (zh) 2020-11-10
JPWO2019188747A1 (ja) 2021-04-08
KR20200135851A (ko) 2020-12-03
JP7424967B2 (ja) 2024-01-30
EP3780069A4 (en) 2022-04-06

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