TWI800493B - 化合物半導體基板之製造方法及化合物半導體基板 - Google Patents
化合物半導體基板之製造方法及化合物半導體基板 Download PDFInfo
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- TWI800493B TWI800493B TW106139616A TW106139616A TWI800493B TW I800493 B TWI800493 B TW I800493B TW 106139616 A TW106139616 A TW 106139616A TW 106139616 A TW106139616 A TW 106139616A TW I800493 B TWI800493 B TW I800493B
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- Prior art keywords
- semiconductor substrate
- compound semiconductor
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- 150000001875 compounds Chemical class 0.000 title 2
- 239000004065 semiconductor Substances 0.000 title 2
- 239000000758 substrate Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66431—Unipolar field-effect transistors with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
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- H01L2924/1025—Semiconducting materials
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- H01L2924/1027—IV
- H01L2924/10272—Silicon Carbide [SiC]
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- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/1033—Gallium nitride [GaN]
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016225198A JP6925117B2 (ja) | 2016-11-18 | 2016-11-18 | 化合物半導体基板の製造方法および化合物半導体基板 |
JP2016-225198 | 2016-11-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201834023A TW201834023A (zh) | 2018-09-16 |
TWI800493B true TWI800493B (zh) | 2023-05-01 |
Family
ID=62145434
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW106139616A TWI800493B (zh) | 2016-11-18 | 2017-11-16 | 化合物半導體基板之製造方法及化合物半導體基板 |
Country Status (7)
Country | Link |
---|---|
US (1) | US11476115B2 (zh) |
EP (1) | EP3544045A4 (zh) |
JP (1) | JP6925117B2 (zh) |
KR (1) | KR102372451B1 (zh) |
CN (1) | CN109964306B (zh) |
TW (1) | TWI800493B (zh) |
WO (1) | WO2018092689A1 (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020113693A (ja) * | 2019-01-16 | 2020-07-27 | エア・ウォーター株式会社 | 化合物半導体基板 |
JP7550557B2 (ja) | 2020-07-15 | 2024-09-13 | エア・ウォーター株式会社 | 化合物半導体基板および化合物半導体基板の製造方法 |
CN116525671B (zh) * | 2023-06-09 | 2024-01-30 | 中电科先进材料技术创新有限公司 | 氮化镓半导体器件及其制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US20060261370A1 (en) * | 2005-05-19 | 2006-11-23 | Raytheon Company | Gallium nitride high electron mobility transistor structure |
TW201025599A (en) * | 2008-10-03 | 2010-07-01 | Univ Hong Kong Science & Techn | Aluminum gallium nitride/gallium nitride high electron mobility transistors |
US20140191240A1 (en) * | 2013-01-04 | 2014-07-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | High Electron Mobility Transistor and Method of Forming the Same |
US20160293710A1 (en) * | 2015-03-31 | 2016-10-06 | Coorstek Kk | Nitride semiconductor substrate |
US20160322225A1 (en) * | 2015-04-29 | 2016-11-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Seed layer structure for growth of iii-v materials on silicon |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0831419B2 (ja) | 1990-12-25 | 1996-03-27 | 名古屋大学長 | 単結晶珪素基板上への化合物半導体単結晶の作製方法 |
JPH0831419A (ja) | 1994-07-14 | 1996-02-02 | Osaka Gas Co Ltd | リチウム二次電池用負極材料およびリチウム二次電池 |
JP2999435B2 (ja) | 1996-06-14 | 2000-01-17 | 松下電器産業株式会社 | 半導体の製造方法及び半導体発光素子 |
JP5788296B2 (ja) | 2011-02-22 | 2015-09-30 | コバレントマテリアル株式会社 | 窒化物半導体基板及びその製造方法 |
JP5127978B1 (ja) * | 2011-09-08 | 2013-01-23 | 株式会社東芝 | 窒化物半導体素子、窒化物半導体ウェーハ及び窒化物半導体層の製造方法 |
JP6052570B2 (ja) | 2012-02-28 | 2016-12-27 | エア・ウォーター株式会社 | 半導体基板の製造方法 |
JP6015053B2 (ja) | 2012-03-26 | 2016-10-26 | 富士通株式会社 | 半導体装置の製造方法及び窒化物半導体結晶の製造方法 |
SG10201705301QA (en) | 2012-12-26 | 2017-07-28 | Agency Science Tech & Res | A semiconductor device for high-power applications |
KR102098250B1 (ko) | 2013-10-21 | 2020-04-08 | 삼성전자 주식회사 | 반도체 버퍼 구조체, 이를 포함하는 반도체 소자 및 반도체 버퍼 구조체를 이용한 반도체 소자 제조방법 |
US9847401B2 (en) * | 2014-02-20 | 2017-12-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of forming the same |
JP6266490B2 (ja) * | 2014-11-04 | 2018-01-24 | エア・ウォーター株式会社 | 半導体装置およびその製造方法 |
US10217641B2 (en) * | 2015-01-20 | 2019-02-26 | International Business Machines Corporation | Control of current collapse in thin patterned GaN |
JP6473017B2 (ja) | 2015-03-09 | 2019-02-20 | エア・ウォーター株式会社 | 化合物半導体基板 |
JP6239017B2 (ja) * | 2015-03-31 | 2017-11-29 | クアーズテック株式会社 | 窒化物半導体基板 |
US20170069721A1 (en) * | 2015-09-08 | 2017-03-09 | M/A-Com Technology Solutions Holdings, Inc. | Parasitic channel mitigation using silicon carbide diffusion barrier regions |
JP6592524B2 (ja) * | 2015-10-21 | 2019-10-16 | エア・ウォーター株式会社 | SiC層を備えた化合物半導体基板 |
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2016
- 2016-11-18 JP JP2016225198A patent/JP6925117B2/ja active Active
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2017
- 2017-11-10 WO PCT/JP2017/040572 patent/WO2018092689A1/ja unknown
- 2017-11-10 KR KR1020197017331A patent/KR102372451B1/ko active IP Right Grant
- 2017-11-10 CN CN201780070933.XA patent/CN109964306B/zh active Active
- 2017-11-10 EP EP17872493.6A patent/EP3544045A4/en active Pending
- 2017-11-10 US US16/461,173 patent/US11476115B2/en active Active
- 2017-11-16 TW TW106139616A patent/TWI800493B/zh active
Patent Citations (5)
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US20060261370A1 (en) * | 2005-05-19 | 2006-11-23 | Raytheon Company | Gallium nitride high electron mobility transistor structure |
TW201025599A (en) * | 2008-10-03 | 2010-07-01 | Univ Hong Kong Science & Techn | Aluminum gallium nitride/gallium nitride high electron mobility transistors |
US20140191240A1 (en) * | 2013-01-04 | 2014-07-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | High Electron Mobility Transistor and Method of Forming the Same |
US20160293710A1 (en) * | 2015-03-31 | 2016-10-06 | Coorstek Kk | Nitride semiconductor substrate |
US20160322225A1 (en) * | 2015-04-29 | 2016-11-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Seed layer structure for growth of iii-v materials on silicon |
Also Published As
Publication number | Publication date |
---|---|
WO2018092689A1 (ja) | 2018-05-24 |
JP2018082121A (ja) | 2018-05-24 |
US11476115B2 (en) | 2022-10-18 |
TW201834023A (zh) | 2018-09-16 |
CN109964306B (zh) | 2023-09-19 |
EP3544045A1 (en) | 2019-09-25 |
EP3544045A4 (en) | 2019-09-25 |
KR102372451B1 (ko) | 2022-03-10 |
CN109964306A (zh) | 2019-07-02 |
JP6925117B2 (ja) | 2021-08-25 |
KR20190077571A (ko) | 2019-07-03 |
US20190279864A1 (en) | 2019-09-12 |
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