JP2018082121A - 化合物半導体基板の製造方法および化合物半導体基板 - Google Patents
化合物半導体基板の製造方法および化合物半導体基板 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 124
- 239000004065 semiconductor Substances 0.000 title claims abstract description 118
- 150000001875 compounds Chemical class 0.000 title claims abstract description 49
- 238000000034 method Methods 0.000 title abstract description 40
- 238000004519 manufacturing process Methods 0.000 title abstract description 18
- 150000004767 nitrides Chemical class 0.000 claims abstract description 63
- 229910002601 GaN Inorganic materials 0.000 abstract description 79
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract description 67
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 abstract description 58
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 58
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 53
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 abstract description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 345
- 230000015572 biosynthetic process Effects 0.000 description 35
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000011084 recovery Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000000700 radioactive tracer Substances 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000010000 carbonizing Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- -1 CS1 compound Chemical class 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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Abstract
Description
2 SiC(炭化ケイ素)層
3 LT(Low Temperature)−AlN(窒化アルミニウム)層
3a AlNの核
4 HT(High Temperature)−AlN層
5,7 Al(アルミニウム)窒化物半導体層
6 GaN(窒化ガリウム)層
12,13,23 電極
21 ガラス板
22 銅板
24 カーブトレーサー
25 計測装置
61 C(炭素)−GaN層
62 u(アンドープ)―GaN層
AL AlN層
CS,CS1 化合物半導体基板
SB 基板
Claims (5)
- Si基板上にSiC層を形成する工程と、
前記SiC層上に、12nm以上100nm以下の厚さを有する第1のAlN層を700℃以上1000℃以下で形成する工程と、
前記第1のAlN層を形成する際の温度よりも高い温度で、前記第1のAlN層上に第2のAlN層を形成する工程と、
前記第2のAlN層上にAlを含む第1の窒化物半導体層を形成する工程と、
前記第1の窒化物半導体層上にGaN層を形成する工程と、
前記GaN層上にAlを含む第2の窒化物半導体層を形成する工程とを備えた、化合物半導体基板の製造方法。 - 前記第1のAlN層を形成する工程において、800℃以上900℃以下の温度で前記第1のAlN層を形成する、請求項1に記載の化合物半導体基板。
- 前記第2のAlN層を形成する工程において、1000℃以上1500℃以下の温度で前記第2のAlN層を形成する、請求項1または2に記載の化合物半導体基板。
- 前記第2のAlN層を形成する工程において、50nm以上1000nm以下の厚さで前記第2のAlN層を形成する、請求項1〜3のいずれかに記載の化合物半導体基板。
- Si基板と、
前記Si基板上に形成されたSiC層と、
前記SiC層上に形成されたAlN層と、
前記AlN層上に形成されたAlを含む第1の窒化物半導体層と、
前記第1の窒化物半導体層上に形成されたGaN層と、
前記GaN層上に形成されたAlを含む第2の窒化物半導体層とを備え、
前記第2の窒化物半導体層上に前記第2の窒化物半導体層と接触して設けられた第1の電極と、前記第2の窒化物半導体層上に前記第2の窒化物半導体層と接触して設けられた第2の電極であって、前記第1の電極を取り囲むように設けられた第2の電極との間に−30Vの電圧を60秒間印加した後、前記電圧の印加を停止する場合に、前記電圧の印加を停止してから、前記電圧の印加前の静電容量に対する前記電圧の印加後の静電容量の比率が0.9以上に回復するまでの時間は、電圧を印加した時間以内である、化合物半導体基板。
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