PL2647033T3 - Cienkowarstwowe urządzenie fotowoltaiczne i sposób jego wytwarzania - Google Patents

Cienkowarstwowe urządzenie fotowoltaiczne i sposób jego wytwarzania

Info

Publication number
PL2647033T3
PL2647033T3 PL12726182T PL12726182T PL2647033T3 PL 2647033 T3 PL2647033 T3 PL 2647033T3 PL 12726182 T PL12726182 T PL 12726182T PL 12726182 T PL12726182 T PL 12726182T PL 2647033 T3 PL2647033 T3 PL 2647033T3
Authority
PL
Poland
Prior art keywords
production
thin film
photovoltaic device
film photovoltaic
thin
Prior art date
Application number
PL12726182T
Other languages
English (en)
Inventor
Adrian Chirila
Ayodhya Nath Tiwari
Patrick Bloesch
Shiro Nishiwaki
David Bremaud
Original Assignee
Flisom Ag
Empa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Flisom Ag, Empa filed Critical Flisom Ag
Publication of PL2647033T3 publication Critical patent/PL2647033T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1698—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible
    • H10F77/1699—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible the films including Group I-III-VI materials, e.g. CIS or CIGS on metal foils or polymer foils
    • H10P10/00—
    • H10P14/2922—
    • H10P14/3236—
    • H10P14/3241—
    • H10P14/3251—
    • H10P14/3254—
    • H10P14/3436—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
PL12726182T 2011-04-19 2012-04-17 Cienkowarstwowe urządzenie fotowoltaiczne i sposób jego wytwarzania PL2647033T3 (pl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IB2011000857 2011-04-19

Publications (1)

Publication Number Publication Date
PL2647033T3 true PL2647033T3 (pl) 2017-01-31

Family

ID=46210311

Family Applications (1)

Application Number Title Priority Date Filing Date
PL12726182T PL2647033T3 (pl) 2011-04-19 2012-04-17 Cienkowarstwowe urządzenie fotowoltaiczne i sposób jego wytwarzania

Country Status (14)

Country Link
US (1) US9786807B2 (pl)
EP (4) EP2660857B1 (pl)
JP (1) JP5904563B2 (pl)
KR (1) KR101985944B1 (pl)
CN (2) CN106252202B (pl)
BR (1) BR112013026806B1 (pl)
ES (1) ES2590464T3 (pl)
HU (3) HUE057448T2 (pl)
MY (1) MY167014A (pl)
PL (1) PL2647033T3 (pl)
PT (1) PT2647033T (pl)
SI (1) SI2647033T1 (pl)
TW (1) TWI538235B (pl)
WO (1) WO2012143858A2 (pl)

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EP2936551B1 (en) * 2012-12-21 2025-05-14 Flisom AG Fabricating thin-film optoelectronic devices with added potassium
CN104051569B (zh) * 2013-03-12 2017-09-26 台湾积体电路制造股份有限公司 薄膜太阳能电池及其制造方法
US10333850B2 (en) * 2015-06-25 2019-06-25 Tracfone Wireless, Inc. Device and process for data throttling for wireless device
WO2018114379A1 (en) 2016-12-22 2018-06-28 Flisom Ag Roll-to roll vapor deposition system
EP3559302A1 (en) 2016-12-22 2019-10-30 Flisom AG Linear source for vapor deposition with heat shields
WO2018114377A1 (en) 2016-12-22 2018-06-28 Flisom Ag Linear vapor source
EP3559303A1 (en) 2016-12-22 2019-10-30 Flisom AG Linear evaporation source
EP3559306B1 (en) 2016-12-22 2022-10-05 Flisom AG Linear source for vapor deposition with at least three electrical heating elements
CN110176517B (zh) * 2019-04-22 2021-03-26 云南师范大学 结构优化的银掺杂铜锌锡硫薄膜太阳电池及其制备方法
CN111342184A (zh) * 2020-02-24 2020-06-26 西安交通大学 一种可调的柔性微波器件及其制备方法
CN113540288B (zh) * 2021-07-07 2022-09-20 南开大学 一种室温硫化的铜基吸收层薄膜和太阳电池及其制备方法
KR102584673B1 (ko) * 2021-08-30 2023-10-06 재단법인대구경북과학기술원 유연 박막태양전지 및 이의 제조방법

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Also Published As

Publication number Publication date
CN106252202A (zh) 2016-12-21
US9786807B2 (en) 2017-10-10
TW201251062A (en) 2012-12-16
MY167014A (en) 2018-07-31
HUE057448T2 (hu) 2022-05-28
CN106252202B (zh) 2020-01-10
CN103430279A (zh) 2013-12-04
KR20140056169A (ko) 2014-05-09
EP3454362B1 (en) 2022-06-01
SI2647033T1 (sl) 2016-10-28
ES2590464T3 (es) 2016-11-22
EP3425659A1 (en) 2019-01-09
BR112013026806B1 (pt) 2021-09-28
JP2014518592A (ja) 2014-07-31
HUE030723T2 (en) 2017-05-29
PT2647033T (pt) 2016-09-12
EP2647033A2 (en) 2013-10-09
TWI538235B (zh) 2016-06-11
EP2660857B1 (en) 2021-09-22
EP2647033B1 (en) 2016-06-08
EP2660857A1 (en) 2013-11-06
HUE059253T2 (hu) 2022-11-28
CN103430279B (zh) 2016-09-14
WO2012143858A2 (en) 2012-10-26
KR101985944B1 (ko) 2019-09-30
US20140026956A1 (en) 2014-01-30
EP3454362A1 (en) 2019-03-13
BR112013026806A2 (pt) 2017-01-10
JP5904563B2 (ja) 2016-04-13
WO2012143858A3 (en) 2012-12-27

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