JP5662001B2 - 半導体デバイス及びその製造方法 - Google Patents
半導体デバイス及びその製造方法 Download PDFInfo
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- JP5662001B2 JP5662001B2 JP2008546618A JP2008546618A JP5662001B2 JP 5662001 B2 JP5662001 B2 JP 5662001B2 JP 2008546618 A JP2008546618 A JP 2008546618A JP 2008546618 A JP2008546618 A JP 2008546618A JP 5662001 B2 JP5662001 B2 JP 5662001B2
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- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T428/00—Stock material or miscellaneous articles
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
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Description
Claims (19)
- x線検出器又はガンマ線検出器に用いられるバルク単結晶材料を成長させる方法であって、
形成される前記バルク単結晶材料とは異なる材料のシード基板を設けるステップと、
物理気相成長技術を使用して、前記シード基板上に中間層である薄膜の材料を1ミクロン/時と10ミクロン/時の間の成長速度で成長させることにより、前記シード基板上に前記中間層を形成するステップと、
成長速度を加速するように当該遷移領域の材料の温度であるソース温度(Tsource)及び前記シード基板の温度である基板温度(Tsub)の少なくとも1つを変更することにより、前記中間層の上に遷移領域を形成するステップと、
物理気相成長法を使用して、100ミクロン/時と500ミクロン/時の間の成長速度で、前記遷移領域の上に前記バルク単結晶材料からなるバルク層を形成するステップと
を含む方法。 - 前記基板温度と前記ソース温度の間の温度差を大きくすることによって前記成長速度が加速される、請求項1に記載の方法。
- 前記ソース温度が少なくとも450℃である、請求項1から2のいずれか一項に記載の方法。
- 前記基板温度が少なくとも200℃である、請求項1から3のいずれか一項に記載の方法。
- 前記シード基板がシリコン基板又はガリウム砒素基板である、請求項1から4のいずれか一項に記載の方法。
- 前記シード基板が25mmより大きい直径を有する、請求項1から5のいずれか一項に記載の方法。
- 前記シード基板が、少なくとも50mmの直径を有する、請求項6に記載の方法。
- 前記バルク単結晶材料が、テルル化亜鉛、テルル化カドミウム、テルル化カドミウム亜鉛及びテルル化カドミウム・マンガンのうちの1つを含む、請求項1から7のいずれか一項に記載の方法。
- 前記バルク単結晶材料が、Cd1-xZnxTe又はCd1-xMnxTeの組成を有する、請求項8に記載の方法。
- 前記バルク単結晶材料が少なくとも500ミクロンの厚さを有する、請求項1から9のいずれか一項に記載の方法。
- 前記シード基板及び前記シード基板上に成長した結晶材料が、形成時より小さい小片に分割される、請求項1から10のいずれか一項に記載の方法。
- 前記x線検出器又は前記ガンマ線検出器を形成するステップを更に含む、請求項1から11のいずれか一項に記載の方法。
- 前記バルク単結晶材料からなる前記バルク層自体を、請求項1から12のいずれか一項に記載の方法に従って、他のバルク結晶材料を形成するためのシード結晶として使用する、請求項1から11のいずれか一項に記載の方法。
- 前記薄膜の組成と前記バルク単結晶材料からなる前記バルク層の組成が異なり、前記組成が前記遷移領域で前記薄膜の組成から前記バルク層の組成へ変化する、請求項1から13のいずれか一項に記載の方法。
- 前記薄膜の組成が前記バルク単結晶材料からなる前記バルク層の組成と同じである、請求項1から13のいずれか一項に記載の方法。
- 前記バルク単結晶材料がII−VI族の半導体である、請求項1から15のいずれか一項に記載の方法。
- 前記バルク単結晶材料からなる前記バルク層が70ミクロンと35000ミクロンの間の厚さを有する、請求項1から16のいずれか一項に記載の方法。
- 前記薄膜が少なくとも10ミクロンの厚さを有する、請求項1から17のいずれか一項に記載の方法。
- 請求項1から18のいずれか一項に記載の方法により形成された前記バルク単結晶材料からなる前記バルク層を含む、x線検出器又はガンマ線検出器。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0526070A GB2435715A (en) | 2005-12-21 | 2005-12-21 | Vapour phase epitaxial growth of thick II-VI semiconductor crystals |
GB0526070.8 | 2005-12-21 | ||
GB0526073.2 | 2005-12-21 | ||
GB0526073A GB2433447A (en) | 2005-12-21 | 2005-12-21 | Bulk single crystal material and method of growth |
PCT/GB2006/004864 WO2007072023A1 (en) | 2005-12-21 | 2006-12-21 | Semiconductor device and method of manufacture thereof |
Publications (2)
Publication Number | Publication Date |
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JP2009520676A JP2009520676A (ja) | 2009-05-28 |
JP5662001B2 true JP5662001B2 (ja) | 2015-01-28 |
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Application Number | Title | Priority Date | Filing Date |
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JP2008546618A Active JP5662001B2 (ja) | 2005-12-21 | 2006-12-21 | 半導体デバイス及びその製造方法 |
Country Status (4)
Country | Link |
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US (2) | US20090053453A1 (ja) |
EP (1) | EP1969622B1 (ja) |
JP (1) | JP5662001B2 (ja) |
WO (1) | WO2007072023A1 (ja) |
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GB201105958D0 (en) * | 2011-04-08 | 2011-05-18 | Kromek Ltd | Apparatus and method for crystal growth |
TWI538235B (zh) * | 2011-04-19 | 2016-06-11 | 弗里松股份有限公司 | 薄膜光伏打裝置及製造方法 |
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TWI677105B (zh) | 2014-05-23 | 2019-11-11 | 瑞士商弗里松股份有限公司 | 製造薄膜光電子裝置之方法及可藉由該方法獲得的薄膜光電子裝置 |
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US20050118527A1 (en) | 2001-02-18 | 2005-06-02 | Ze'ev Harel | Wide band gap semiconductor composite detector plates for x-ray digital radiography |
US6737653B2 (en) * | 2001-03-12 | 2004-05-18 | Lg. Philips Lcd Co., Ltd. | X-ray detector and method of fabricating therefore |
US20060011135A1 (en) * | 2001-07-06 | 2006-01-19 | Dmitriev Vladimir A | HVPE apparatus for simultaneously producing multiple wafers during a single epitaxial growth run |
US20030024471A1 (en) * | 2001-08-06 | 2003-02-06 | Motorola, Inc. | Fabrication of semiconductor structures and devices forms by utilizing laser assisted deposition |
US20030034500A1 (en) * | 2001-08-15 | 2003-02-20 | Motorola, Inc. | Semiconductor structure including a zintl material buffer layer, device including the structure, and method of forming the structure and device |
US7473315B2 (en) * | 2001-10-09 | 2009-01-06 | Sumitomo Electric Industries, Ltd. | AlxInyGa1-x-yN mixture crystal substrate, method of growing AlxInyGa1-x-yN mixture crystal substrate and method of producing AlxInyGa1-x-yN mixture crystal substrate |
FR2852146B1 (fr) | 2003-03-04 | 2005-06-24 | Univ Paris Curie | Imageur x a conversion directe et son procede de fabrication |
JP4131498B2 (ja) * | 2003-11-27 | 2008-08-13 | 財団法人名古屋産業科学研究所 | 半導体放射線検出器 |
WO2005060011A1 (ja) | 2003-12-16 | 2005-06-30 | National University Corporation Shizuoka University | 広域エネルギーレンジ放射線検出器及び製造方法 |
KR100718188B1 (ko) * | 2004-05-07 | 2007-05-15 | 삼성코닝 주식회사 | 비극성 a면 질화물 반도체 단결정 기판 및 이의 제조방법 |
GB2433648A (en) * | 2005-12-21 | 2007-06-27 | Durham Scient Crystals Ltd | Radiation detector formed by deposition of bulk semiconductor crystal layers |
EP1969622B1 (en) * | 2005-12-21 | 2018-11-14 | Kromek Limited | Semiconductor device and method of manufacture thereof |
-
2006
- 2006-12-21 EP EP06831438.4A patent/EP1969622B1/en active Active
- 2006-12-21 US US12/158,114 patent/US20090053453A1/en not_active Abandoned
- 2006-12-21 WO PCT/GB2006/004864 patent/WO2007072023A1/en active Application Filing
- 2006-12-21 JP JP2008546618A patent/JP5662001B2/ja active Active
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EP1969622A1 (en) | 2008-09-17 |
US20110024877A1 (en) | 2011-02-03 |
EP1969622B1 (en) | 2018-11-14 |
JP2009520676A (ja) | 2009-05-28 |
US8968469B2 (en) | 2015-03-03 |
US20090053453A1 (en) | 2009-02-26 |
WO2007072023A1 (en) | 2007-06-28 |
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