NO993778L - Radioarkitektur - Google Patents

Radioarkitektur

Info

Publication number
NO993778L
NO993778L NO993778A NO993778A NO993778L NO 993778 L NO993778 L NO 993778L NO 993778 A NO993778 A NO 993778A NO 993778 A NO993778 A NO 993778A NO 993778 L NO993778 L NO 993778L
Authority
NO
Norway
Prior art keywords
radio architecture
architecture
radio
Prior art date
Application number
NO993778A
Other languages
English (en)
Norwegian (no)
Other versions
NO993778D0 (no
Inventor
Andrej Litwin
Sven Erik Mattisson
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Publication of NO993778D0 publication Critical patent/NO993778D0/no
Publication of NO993778L publication Critical patent/NO993778L/no

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/16—Circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Signal Processing (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Amplifiers (AREA)
  • Transceivers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
  • Executing Machine-Instructions (AREA)
  • Mobile Radio Communication Systems (AREA)
  • Semiconductor Integrated Circuits (AREA)
NO993778A 1997-02-05 1999-08-04 Radioarkitektur NO993778L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9702375A GB2322042B (en) 1997-02-05 1997-02-05 Radio architecture
PCT/EP1998/000422 WO1998035386A1 (en) 1997-02-05 1998-01-26 Radio architecture

Publications (2)

Publication Number Publication Date
NO993778D0 NO993778D0 (no) 1999-08-04
NO993778L true NO993778L (no) 1999-10-04

Family

ID=10807155

Family Applications (1)

Application Number Title Priority Date Filing Date
NO993778A NO993778L (no) 1997-02-05 1999-08-04 Radioarkitektur

Country Status (21)

Country Link
US (2) US6611680B2 (ko)
EP (3) EP1742268A3 (ko)
JP (1) JP2001516525A (ko)
KR (2) KR100686413B1 (ko)
CN (1) CN1165998C (ko)
AU (1) AU746534B2 (ko)
BR (1) BR9807551A (ko)
CA (1) CA2280128C (ko)
DE (1) DE69839512D1 (ko)
DK (1) DK0970523T3 (ko)
EE (1) EE9900342A (ko)
ES (1) ES2306470T3 (ko)
GB (1) GB2322042B (ko)
HK (1) HK1024098A1 (ko)
ID (1) ID22766A (ko)
MY (1) MY126413A (ko)
NO (1) NO993778L (ko)
PL (1) PL334808A1 (ko)
RU (1) RU2217862C2 (ko)
TR (3) TR199901818T2 (ko)
WO (1) WO1998035386A1 (ko)

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KR100446004B1 (ko) * 2002-07-12 2004-08-25 한국과학기술원 깊은 엔 웰 씨모스 공정으로 구현된 수직형 바이폴라 정션트랜지스터를 사용한 직접 변환 수신기
US20040044512A1 (en) * 2002-08-29 2004-03-04 Motorola, Inc. Method and apparatus for increasing a number of operating states of a circuit device
GB2412259A (en) 2004-03-16 2005-09-21 Wolfson Ltd A CMOS folded-cascode operational amplifier having low flicker noise
GB2412260B (en) 2004-03-16 2007-09-26 Wolfson Microelectronics Plc Low noise op amp
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US20090088124A1 (en) * 2007-09-27 2009-04-02 Nanoamp Solutions, Inc. (Cayman) Radio Frequency Receiver Architecture
DE102008018871B4 (de) * 2008-04-14 2010-10-07 Atmel Automotive Gmbh Empfängerschaltung, Verfahren zum Empfang eines Signals und Verwendung einer Detektionsschaltung und einer Kontrollschaltung

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Also Published As

Publication number Publication date
CA2280128C (en) 2008-08-12
ES2306470T3 (es) 2008-11-01
CN1246964A (zh) 2000-03-08
EP1742267A2 (en) 2007-01-10
BR9807551A (pt) 2000-02-01
TR200000320T2 (tr) 2000-05-22
EP1742268A2 (en) 2007-01-10
KR100686413B1 (ko) 2007-02-23
KR20050111639A (ko) 2005-11-25
PL334808A1 (en) 2000-03-13
JP2001516525A (ja) 2001-09-25
WO1998035386A1 (en) 1998-08-13
AU746534B2 (en) 2002-05-02
CN1165998C (zh) 2004-09-08
GB9702375D0 (en) 1997-03-26
KR20000070610A (ko) 2000-11-25
AU6213598A (en) 1998-08-26
MY126413A (en) 2006-09-29
RU2217862C2 (ru) 2003-11-27
GB2322042B (en) 2002-02-06
US20030013416A1 (en) 2003-01-16
CA2280128A1 (en) 1998-08-13
HK1024098A1 (en) 2000-09-29
TR200000321T2 (tr) 2000-05-22
GB2322042A (en) 1998-08-12
US20030211833A1 (en) 2003-11-13
EP0970523A1 (en) 2000-01-12
DK0970523T3 (da) 2008-09-15
TR199901818T2 (xx) 1999-10-21
US6611680B2 (en) 2003-08-26
EP1742267A3 (en) 2007-08-08
ID22766A (id) 1999-12-09
DE69839512D1 (de) 2008-07-03
NO993778D0 (no) 1999-08-04
EE9900342A (et) 2000-02-15
EP0970523B1 (en) 2008-05-21
US6973290B2 (en) 2005-12-06
EP1742268A3 (en) 2007-08-01

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Legal Events

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FC2A Withdrawal, rejection or dismissal of laid open patent application