NL8900593A - Halfgeleiderinrichting met een beveiligingsschakeling. - Google Patents
Halfgeleiderinrichting met een beveiligingsschakeling. Download PDFInfo
- Publication number
- NL8900593A NL8900593A NL8900593A NL8900593A NL8900593A NL 8900593 A NL8900593 A NL 8900593A NL 8900593 A NL8900593 A NL 8900593A NL 8900593 A NL8900593 A NL 8900593A NL 8900593 A NL8900593 A NL 8900593A
- Authority
- NL
- Netherlands
- Prior art keywords
- semiconductor device
- zone
- active zone
- resistance
- junction
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 87
- 229910021332 silicide Inorganic materials 0.000 claims description 56
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 49
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 43
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 41
- 229910052751 metal Inorganic materials 0.000 claims description 39
- 239000002184 metal Substances 0.000 claims description 39
- 239000004020 conductor Substances 0.000 claims description 26
- 230000001681 protective effect Effects 0.000 claims description 22
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 12
- 230000005669 field effect Effects 0.000 claims description 8
- 238000009826 distribution Methods 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 45
- 229910021341 titanium silicide Inorganic materials 0.000 description 31
- 238000002513 implantation Methods 0.000 description 20
- 229910052782 aluminium Inorganic materials 0.000 description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 16
- 238000000034 method Methods 0.000 description 16
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 14
- 230000015556 catabolic process Effects 0.000 description 14
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 12
- 229910052698 phosphorus Inorganic materials 0.000 description 12
- 239000011574 phosphorus Substances 0.000 description 12
- 239000010936 titanium Substances 0.000 description 12
- 229910052719 titanium Inorganic materials 0.000 description 12
- 230000007704 transition Effects 0.000 description 11
- 230000000873 masking effect Effects 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 230000002411 adverse Effects 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- 229910052785 arsenic Inorganic materials 0.000 description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000007943 implant Substances 0.000 description 4
- 230000001788 irregular Effects 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8900593A NL8900593A (nl) | 1989-03-13 | 1989-03-13 | Halfgeleiderinrichting met een beveiligingsschakeling. |
| DE69010034T DE69010034T2 (de) | 1989-03-13 | 1990-03-07 | Halbleiteranordnung mit einer Schutzschaltung. |
| EP90200530A EP0387944B1 (de) | 1989-03-13 | 1990-03-07 | Halbleiteranordnung mit einer Schutzschaltung |
| KR1019900003019A KR0178980B1 (ko) | 1989-03-13 | 1990-03-08 | 보호회로가 제공된 반도체 장치 |
| JP2058229A JPH02273971A (ja) | 1989-03-13 | 1990-03-12 | 保護回路をそなえた半導体デバイス |
| US07/693,765 US5248892A (en) | 1989-03-13 | 1991-04-26 | Semiconductor device provided with a protection circuit |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8900593A NL8900593A (nl) | 1989-03-13 | 1989-03-13 | Halfgeleiderinrichting met een beveiligingsschakeling. |
| NL8900593 | 1989-03-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8900593A true NL8900593A (nl) | 1990-10-01 |
Family
ID=19854275
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8900593A NL8900593A (nl) | 1989-03-13 | 1989-03-13 | Halfgeleiderinrichting met een beveiligingsschakeling. |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP0387944B1 (de) |
| JP (1) | JPH02273971A (de) |
| KR (1) | KR0178980B1 (de) |
| DE (1) | DE69010034T2 (de) |
| NL (1) | NL8900593A (de) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2773221B2 (ja) * | 1989-04-13 | 1998-07-09 | セイコーエプソン株式会社 | 半導体装置 |
| JP2773220B2 (ja) * | 1989-04-13 | 1998-07-09 | セイコーエプソン株式会社 | 半導体装置 |
| US6975296B1 (en) | 1991-06-14 | 2005-12-13 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
| WO1994005042A1 (en) * | 1992-08-14 | 1994-03-03 | International Business Machines Corporation | Mos device having protection against electrostatic discharge |
| JP2671755B2 (ja) * | 1993-06-14 | 1997-10-29 | 日本電気株式会社 | 入出力保護回路 |
| JPH07142589A (ja) * | 1993-11-22 | 1995-06-02 | Nec Corp | 半導体集積回路装置およびその製造方法 |
| DE4341170C2 (de) * | 1993-12-02 | 2001-05-03 | Siemens Ag | ESD-Schutzstruktur für integrierte Schaltungen |
| US5440162A (en) * | 1994-07-26 | 1995-08-08 | Rockwell International Corporation | ESD protection for submicron CMOS circuits |
| US5519242A (en) * | 1994-08-17 | 1996-05-21 | David Sarnoff Research Center, Inc. | Electrostatic discharge protection circuit for a NMOS or lateral NPN transistor |
| JP3144330B2 (ja) * | 1996-12-26 | 2001-03-12 | 日本電気株式会社 | 半導体装置 |
| US5847431A (en) * | 1997-12-18 | 1998-12-08 | Intel Corporation | Reduced capacitance transistor with electro-static discharge protection structure |
| US6587320B1 (en) * | 2000-01-04 | 2003-07-01 | Sarnoff Corporation | Apparatus for current ballasting ESD sensitive devices |
| KR20030019432A (ko) * | 2000-06-15 | 2003-03-06 | 사르노프 코포레이션 | 멀티-핑거 전류 밸러스팅 ｅｓｄ 보호 회로 및 ｅｓｄ감지 회로용 인터리브 밸러스팅 방법 |
| WO2002061841A2 (en) * | 2001-01-31 | 2002-08-08 | Advanced Micro Devices, Inc. | Partially silicide diode and method of manufacture |
| US6589823B1 (en) | 2001-02-22 | 2003-07-08 | Advanced Micro Devices, Inc. | Silicon-on-insulator (SOI)electrostatic discharge (ESD) protection device with backside contact plug |
| TWI256241B (en) | 2004-05-24 | 2006-06-01 | Primax Electronics Ltd | Planar light source of image scanner |
| DE102005044124B4 (de) | 2005-09-15 | 2010-11-25 | Texas Instruments Deutschland Gmbh | Verfahren zur Herstellung einer integrierten Schaltung mit Gate-Selbstschutz, und integrierte Schaltung mit Gate-Selbstschutz |
| US7436207B2 (en) * | 2006-07-21 | 2008-10-14 | Microchip Technology Incorporated | Integrated circuit device having at least one of a plurality of bond pads with a selectable plurality of input-output functionalities |
| JP5886387B2 (ja) * | 2009-03-11 | 2016-03-16 | ルネサスエレクトロニクス株式会社 | Ｅｓｄ保護素子 |
| JP5864216B2 (ja) * | 2011-11-04 | 2016-02-17 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP6838240B2 (ja) * | 2017-01-19 | 2021-03-03 | 日立Astemo株式会社 | 電子装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59107555A (ja) * | 1982-12-03 | 1984-06-21 | Fujitsu Ltd | 半導体装置 |
| JPS60123052A (ja) * | 1983-12-07 | 1985-07-01 | Hitachi Ltd | 半導体装置 |
| JPH0695563B2 (ja) * | 1985-02-01 | 1994-11-24 | 株式会社日立製作所 | 半導体装置 |
| US4734752A (en) * | 1985-09-27 | 1988-03-29 | Advanced Micro Devices, Inc. | Electrostatic discharge protection device for CMOS integrated circuit outputs |
-
1989
- 1989-03-13 NL NL8900593A patent/NL8900593A/nl not_active Application Discontinuation
-
1990
- 1990-03-07 EP EP90200530A patent/EP0387944B1/de not_active Expired - Lifetime
- 1990-03-07 DE DE69010034T patent/DE69010034T2/de not_active Expired - Fee Related
- 1990-03-08 KR KR1019900003019A patent/KR0178980B1/ko not_active IP Right Cessation
- 1990-03-12 JP JP2058229A patent/JPH02273971A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR0178980B1 (ko) | 1999-03-20 |
| KR900015315A (ko) | 1990-10-26 |
| EP0387944A1 (de) | 1990-09-19 |
| DE69010034T2 (de) | 1995-01-05 |
| JPH02273971A (ja) | 1990-11-08 |
| EP0387944B1 (de) | 1994-06-22 |
| DE69010034D1 (de) | 1994-07-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1B | A search report has been drawn up | ||
| BV | The patent application has lapsed |