NL8802973A - Geintegreerde geheugenschakeling. - Google Patents

Geintegreerde geheugenschakeling. Download PDF

Info

Publication number
NL8802973A
NL8802973A NL8802973A NL8802973A NL8802973A NL 8802973 A NL8802973 A NL 8802973A NL 8802973 A NL8802973 A NL 8802973A NL 8802973 A NL8802973 A NL 8802973A NL 8802973 A NL8802973 A NL 8802973A
Authority
NL
Netherlands
Prior art keywords
transistor
transistors
memory circuit
circuit according
integrated memory
Prior art date
Application number
NL8802973A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL8802973A priority Critical patent/NL8802973A/nl
Priority to EP89203007A priority patent/EP0374995B1/en
Priority to DE68918568T priority patent/DE68918568T2/de
Priority to KR1019890017375A priority patent/KR900010776A/ko
Priority to FI895717A priority patent/FI895717A0/fi
Priority to JP1307822A priority patent/JP2755450B2/ja
Priority to US07/444,929 priority patent/US5083295A/en
Priority to IE383389A priority patent/IE64653B1/en
Publication of NL8802973A publication Critical patent/NL8802973A/nl

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/416—Read-write [R-W] circuits 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
NL8802973A 1988-12-02 1988-12-02 Geintegreerde geheugenschakeling. NL8802973A (nl)

Priority Applications (8)

Application Number Priority Date Filing Date Title
NL8802973A NL8802973A (nl) 1988-12-02 1988-12-02 Geintegreerde geheugenschakeling.
EP89203007A EP0374995B1 (en) 1988-12-02 1989-11-27 Integrated circuit with a memory
DE68918568T DE68918568T2 (de) 1988-12-02 1989-11-27 Integrierte Speicherschaltung.
KR1019890017375A KR900010776A (ko) 1988-12-02 1989-11-29 메모리를 내장한 집적 회로
FI895717A FI895717A0 (fi) 1988-12-02 1989-11-29 Integrerad krets med minne.
JP1307822A JP2755450B2 (ja) 1988-12-02 1989-11-29 メモリを有する集積回路
US07/444,929 US5083295A (en) 1988-12-02 1989-11-30 Integrated memory circuit with interconnected sense amplifiers
IE383389A IE64653B1 (en) 1988-12-02 1989-11-30 Integrated circuit with a memory

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8802973 1988-12-02
NL8802973A NL8802973A (nl) 1988-12-02 1988-12-02 Geintegreerde geheugenschakeling.

Publications (1)

Publication Number Publication Date
NL8802973A true NL8802973A (nl) 1990-07-02

Family

ID=19853327

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8802973A NL8802973A (nl) 1988-12-02 1988-12-02 Geintegreerde geheugenschakeling.

Country Status (8)

Country Link
US (1) US5083295A (fi)
EP (1) EP0374995B1 (fi)
JP (1) JP2755450B2 (fi)
KR (1) KR900010776A (fi)
DE (1) DE68918568T2 (fi)
FI (1) FI895717A0 (fi)
IE (1) IE64653B1 (fi)
NL (1) NL8802973A (fi)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5430677A (en) * 1991-02-11 1995-07-04 Intel Corporation Architecture for reading information from a memory array
JP2939027B2 (ja) * 1991-10-31 1999-08-25 三菱電機株式会社 半導体記憶装置
US5878269A (en) * 1992-03-27 1999-03-02 National Semiconductor Corporation High speed processor for operation at reduced operating voltage
EP0597231B1 (en) * 1992-11-12 1998-11-25 United Memories, Inc. Sense amplifier for an integrated circuit memory
TW223172B (en) * 1992-12-22 1994-05-01 Siemens Ag Siganl sensing circuits for memory system using dynamic gain memory cells
GB2277390B (en) * 1993-04-21 1997-02-26 Plessey Semiconductors Ltd Random access memory
US5508644A (en) * 1994-09-28 1996-04-16 Motorola, Inc. Sense amplifier for differential voltage detection with low input capacitance
US5506524A (en) * 1995-03-01 1996-04-09 Lin; Jyhfong Low-voltage low-power dynamic folded sense amplifier
US5477489A (en) * 1995-03-20 1995-12-19 Exponential Technology, Inc. High-stability CMOS multi-port register file memory cell with column isolation and current-mirror row line driver
GB2346237B (en) * 1999-01-27 2003-04-30 Sgs Thomson Microelectronics Dynamic voltage sense amplifier
KR100831678B1 (ko) * 2006-11-24 2008-05-22 주식회사 하이닉스반도체 반도체 장치의 센스 앰프

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3879621A (en) * 1973-04-18 1975-04-22 Ibm Sense amplifier
US4131951A (en) * 1976-05-17 1978-12-26 Tokyo Shibaura Electric Co., Ltd. High speed complementary MOS memory
JPS5694574A (en) * 1979-12-27 1981-07-31 Toshiba Corp Complementary mos sense circuit
JPS5819793A (ja) * 1981-07-27 1983-02-04 Toshiba Corp 半導体メモリ装置
US4555777A (en) * 1984-08-14 1985-11-26 Texas Instruments Incorporated Sense amplifier circuit for dynamic read/write memory
DE3884859T2 (de) * 1987-06-04 1994-02-03 Nec Corp Dynamische Speicherschaltung mit einem Abfühlschema.
US4804871A (en) * 1987-07-28 1989-02-14 Advanced Micro Devices, Inc. Bit-line isolated, CMOS sense amplifier

Also Published As

Publication number Publication date
IE893833L (en) 1990-06-02
DE68918568T2 (de) 1995-04-27
US5083295A (en) 1992-01-21
EP0374995B1 (en) 1994-09-28
EP0374995A1 (en) 1990-06-27
FI895717A0 (fi) 1989-11-29
JPH02189789A (ja) 1990-07-25
JP2755450B2 (ja) 1998-05-20
DE68918568D1 (de) 1994-11-03
KR900010776A (ko) 1990-07-09
IE64653B1 (en) 1995-08-23

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BV The patent application has lapsed