FI895717A0 - Integrerad krets med minne. - Google Patents

Integrerad krets med minne.

Info

Publication number
FI895717A0
FI895717A0 FI895717A FI895717A FI895717A0 FI 895717 A0 FI895717 A0 FI 895717A0 FI 895717 A FI895717 A FI 895717A FI 895717 A FI895717 A FI 895717A FI 895717 A0 FI895717 A0 FI 895717A0
Authority
FI
Finland
Prior art keywords
minne
crete
integrated
integrated crete
Prior art date
Application number
FI895717A
Other languages
English (en)
Inventor
Judocus Adrianus Mari Lammerts
Willem Gerrit Jozef Ritzerfeld
Michael James Tooher
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of FI895717A0 publication Critical patent/FI895717A0/fi

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/416—Read-write [R-W] circuits 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
FI895717A 1988-12-02 1989-11-29 Integrerad krets med minne. FI895717A0 (fi)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8802973A NL8802973A (nl) 1988-12-02 1988-12-02 Geintegreerde geheugenschakeling.

Publications (1)

Publication Number Publication Date
FI895717A0 true FI895717A0 (fi) 1989-11-29

Family

ID=19853327

Family Applications (1)

Application Number Title Priority Date Filing Date
FI895717A FI895717A0 (fi) 1988-12-02 1989-11-29 Integrerad krets med minne.

Country Status (8)

Country Link
US (1) US5083295A (fi)
EP (1) EP0374995B1 (fi)
JP (1) JP2755450B2 (fi)
KR (1) KR900010776A (fi)
DE (1) DE68918568T2 (fi)
FI (1) FI895717A0 (fi)
IE (1) IE64653B1 (fi)
NL (1) NL8802973A (fi)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5430677A (en) * 1991-02-11 1995-07-04 Intel Corporation Architecture for reading information from a memory array
JP2939027B2 (ja) * 1991-10-31 1999-08-25 三菱電機株式会社 半導体記憶装置
US5878269A (en) * 1992-03-27 1999-03-02 National Semiconductor Corporation High speed processor for operation at reduced operating voltage
EP0852381B1 (en) 1992-11-12 2005-11-16 ProMOS Technologies, Inc. Sense amplifier with local write drivers
TW223172B (en) * 1992-12-22 1994-05-01 Siemens Ag Siganl sensing circuits for memory system using dynamic gain memory cells
GB2277390B (en) * 1993-04-21 1997-02-26 Plessey Semiconductors Ltd Random access memory
US5508644A (en) * 1994-09-28 1996-04-16 Motorola, Inc. Sense amplifier for differential voltage detection with low input capacitance
US5506524A (en) * 1995-03-01 1996-04-09 Lin; Jyhfong Low-voltage low-power dynamic folded sense amplifier
US5477489A (en) * 1995-03-20 1995-12-19 Exponential Technology, Inc. High-stability CMOS multi-port register file memory cell with column isolation and current-mirror row line driver
GB2346237B (en) * 1999-01-27 2003-04-30 Sgs Thomson Microelectronics Dynamic voltage sense amplifier
KR100831678B1 (ko) * 2006-11-24 2008-05-22 주식회사 하이닉스반도체 반도체 장치의 센스 앰프

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3879621A (en) * 1973-04-18 1975-04-22 Ibm Sense amplifier
US4131951A (en) * 1976-05-17 1978-12-26 Tokyo Shibaura Electric Co., Ltd. High speed complementary MOS memory
JPS5694574A (en) * 1979-12-27 1981-07-31 Toshiba Corp Complementary mos sense circuit
JPS5819793A (ja) * 1981-07-27 1983-02-04 Toshiba Corp 半導体メモリ装置
US4555777A (en) * 1984-08-14 1985-11-26 Texas Instruments Incorporated Sense amplifier circuit for dynamic read/write memory
EP0293933B1 (en) * 1987-06-04 1993-10-13 Nec Corporation Dynamic memory circuit with improved sensing scheme
US4804871A (en) * 1987-07-28 1989-02-14 Advanced Micro Devices, Inc. Bit-line isolated, CMOS sense amplifier

Also Published As

Publication number Publication date
US5083295A (en) 1992-01-21
KR900010776A (ko) 1990-07-09
JP2755450B2 (ja) 1998-05-20
NL8802973A (nl) 1990-07-02
JPH02189789A (ja) 1990-07-25
IE893833L (en) 1990-06-02
DE68918568T2 (de) 1995-04-27
IE64653B1 (en) 1995-08-23
DE68918568D1 (de) 1994-11-03
EP0374995A1 (en) 1990-06-27
EP0374995B1 (en) 1994-09-28

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Legal Events

Date Code Title Description
HC Name/ company changed in application

Owner name: PHILIPS ELECTRONICS N.V.

FD Application lapsed
FD Application lapsed

Owner name: PHILIPS ELECTRONICS N.V.