NL8100347A - Halfgeleiderinrichting met een beveiligingsinrichting. - Google Patents

Halfgeleiderinrichting met een beveiligingsinrichting. Download PDF

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Publication number
NL8100347A
NL8100347A NL8100347A NL8100347A NL8100347A NL 8100347 A NL8100347 A NL 8100347A NL 8100347 A NL8100347 A NL 8100347A NL 8100347 A NL8100347 A NL 8100347A NL 8100347 A NL8100347 A NL 8100347A
Authority
NL
Netherlands
Prior art keywords
collector
insulating layer
zone
electrode
emitter
Prior art date
Application number
NL8100347A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL8100347A priority Critical patent/NL8100347A/nl
Priority to EP82200025A priority patent/EP0057024B1/fr
Priority to DE8282200025T priority patent/DE3261244D1/de
Priority to CA000394612A priority patent/CA1180468A/fr
Priority to AU79741/82A priority patent/AU550015B2/en
Priority to IE142/82A priority patent/IE53096B1/en
Priority to JP57010833A priority patent/JPS57143860A/ja
Publication of NL8100347A publication Critical patent/NL8100347A/nl
Priority to US06/889,288 priority patent/US4697199A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823462—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0722—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with lateral bipolar transistors and diodes, or capacitors, or resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
NL8100347A 1981-01-26 1981-01-26 Halfgeleiderinrichting met een beveiligingsinrichting. NL8100347A (nl)

Priority Applications (8)

Application Number Priority Date Filing Date Title
NL8100347A NL8100347A (nl) 1981-01-26 1981-01-26 Halfgeleiderinrichting met een beveiligingsinrichting.
EP82200025A EP0057024B1 (fr) 1981-01-26 1982-01-12 Dispositif semiconducteur comportant un dispositif de sécurité
DE8282200025T DE3261244D1 (en) 1981-01-26 1982-01-12 Semiconductor device having a safety device
CA000394612A CA1180468A (fr) 1981-01-26 1982-01-21 Semiconducteur a dispositif de surete
AU79741/82A AU550015B2 (en) 1981-01-26 1982-01-22 Semiconductor device having a safety device
IE142/82A IE53096B1 (en) 1981-01-26 1982-01-25 Semiconductor device having a safety device
JP57010833A JPS57143860A (en) 1981-01-26 1982-01-26 Semiconductor device
US06/889,288 US4697199A (en) 1981-01-26 1986-07-22 Semiconductor protection device having a bipolar transistor and an auxiliary field effect transistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8100347A NL8100347A (nl) 1981-01-26 1981-01-26 Halfgeleiderinrichting met een beveiligingsinrichting.
NL8100347 1981-01-26

Publications (1)

Publication Number Publication Date
NL8100347A true NL8100347A (nl) 1982-08-16

Family

ID=19836919

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8100347A NL8100347A (nl) 1981-01-26 1981-01-26 Halfgeleiderinrichting met een beveiligingsinrichting.

Country Status (8)

Country Link
US (1) US4697199A (fr)
EP (1) EP0057024B1 (fr)
JP (1) JPS57143860A (fr)
AU (1) AU550015B2 (fr)
CA (1) CA1180468A (fr)
DE (1) DE3261244D1 (fr)
IE (1) IE53096B1 (fr)
NL (1) NL8100347A (fr)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60123055A (ja) * 1983-12-07 1985-07-01 Fujitsu Ltd 半導体装置及びその製造方法
JPS60207383A (ja) * 1984-03-31 1985-10-18 Toshiba Corp 半導体装置
FR2575333B1 (fr) * 1984-12-21 1987-01-23 Radiotechnique Compelec Dispositif de protection d'un circuit integre contre les decharges electrostatiques
JPS63244874A (ja) * 1987-03-31 1988-10-12 Toshiba Corp 入力保護回路
US4819047A (en) * 1987-05-15 1989-04-04 Advanced Micro Devices, Inc. Protection system for CMOS integrated circuits
JP2679046B2 (ja) * 1987-05-22 1997-11-19 ソニー株式会社 メモリ装置
US4812891A (en) * 1987-12-17 1989-03-14 Maxim Integrated Products Bipolar lateral pass-transistor for CMOS circuits
US5141898A (en) * 1988-02-02 1992-08-25 Analog Devices, Incorporated Integrated circuit with means for reducing ESD damage
EP0397780A4 (en) * 1988-02-02 1991-09-18 Analog Devices, Incorporated Ic with means for reducing esd damage
US5089433A (en) * 1988-08-08 1992-02-18 National Semiconductor Corporation Bipolar field-effect electrically erasable programmable read only memory cell and method of manufacture
EP0355501B1 (fr) * 1988-08-16 1994-02-16 Siemens Aktiengesellschaft Transistor bipolaire comme élément de protection pour circuits intégrés
US5225896A (en) * 1989-02-01 1993-07-06 U.S. Philips Corporation Protection element and method of manufacturing same
NL8900239A (nl) * 1989-02-01 1990-09-03 Philips Nv Protectie-element en werkwijze ter vervaardiging daarvan.
JPH0821840B2 (ja) * 1989-12-07 1996-03-04 富士電機株式会社 パワー半導体装置のスナバ回路
US5465189A (en) * 1990-03-05 1995-11-07 Texas Instruments Incorporated Low voltage triggering semiconductor controlled rectifiers
US5436183A (en) * 1990-04-17 1995-07-25 National Semiconductor Corporation Electrostatic discharge protection transistor element fabrication process
TW203148B (fr) * 1991-03-27 1993-04-01 American Telephone & Telegraph
US5401997A (en) * 1992-01-22 1995-03-28 Integrated Device Technology, Inc. ESD protection for poly resistor on oxide
JP2512118Y2 (ja) * 1993-01-30 1996-09-25 寛 野垣内 内装用造作柱材
US5459083A (en) * 1993-03-01 1995-10-17 Motorola, Inc. Method for making BIMOS device having a bipolar transistor and a MOS triggering transistor
US5733794A (en) * 1995-02-06 1998-03-31 Motorola, Inc. Process for forming a semiconductor device with ESD protection
KR100214235B1 (ko) * 1995-05-24 1999-08-02 가네꼬 히사시 반도체 장치 및 그 제조방법
JPH09312391A (ja) * 1996-05-22 1997-12-02 Toshiba Corp 半導体装置およびその製造方法
EP0851552A1 (fr) * 1996-12-31 1998-07-01 STMicroelectronics S.r.l. Circuit de protection pour une ligne d'alimentation dans un dispositif intégré à semi-conducteurs
US6153892A (en) * 1998-02-12 2000-11-28 Nec Corporation Semiconductor device and method for manufacture thereof
US20140266393A1 (en) * 2013-03-14 2014-09-18 Linear Technology Corporation Bipolar transistor with lowered 1/f noise
US10937785B2 (en) * 2016-01-29 2021-03-02 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3395290A (en) * 1965-10-08 1968-07-30 Gen Micro Electronics Inc Protective circuit for insulated gate metal oxide semiconductor fieldeffect device
US3407339A (en) * 1966-05-02 1968-10-22 North American Rockwell Voltage protection device utilizing a field effect transistor
GB1170705A (en) * 1967-02-27 1969-11-12 Hitachi Ltd An Insulated Gate Type Field Effect Semiconductor Device having a Breakdown Preventing Circuit Device and a method of manufacturing the same
GB1179388A (en) * 1967-11-02 1970-01-28 Ncr Co Electrical Protective Circuit for Metal-Oxide-Semiconductor Transistors
US3673427A (en) * 1970-02-02 1972-06-27 Electronic Arrays Input circuit structure for mos integrated circuits
JPS5410836B1 (fr) * 1970-06-26 1979-05-10
US3787717A (en) * 1971-12-09 1974-01-22 Ibm Over voltage protection circuit lateral bipolar transistor with gated collector junction
FR2289051A1 (fr) * 1974-10-22 1976-05-21 Ibm Dispositifs a semi-conducteur du genre transistors a effet de champ et a porte isolee et circuits de protection cotre les surtensions
NL176322C (nl) * 1976-02-24 1985-03-18 Philips Nv Halfgeleiderinrichting met beveiligingsschakeling.
JPS53145486A (en) * 1977-05-24 1978-12-18 Mitsubishi Electric Corp Protecting circuit using insulated gate field effect type transistors
JPS5563871A (en) * 1978-11-06 1980-05-14 Nec Corp Protector for field-effect transistor with insulated gate
JPS55165682A (en) * 1979-06-11 1980-12-24 Mitsubishi Electric Corp Mos field effect semiconductor device

Also Published As

Publication number Publication date
AU7974182A (en) 1982-08-05
JPH0230584B2 (fr) 1990-07-06
AU550015B2 (en) 1986-02-27
JPS57143860A (en) 1982-09-06
EP0057024A1 (fr) 1982-08-04
US4697199A (en) 1987-09-29
EP0057024B1 (fr) 1984-11-21
IE820142L (en) 1982-07-26
CA1180468A (fr) 1985-01-02
IE53096B1 (en) 1988-06-22
DE3261244D1 (en) 1985-01-03

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