NL7900280A - Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. - Google Patents

Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. Download PDF

Info

Publication number
NL7900280A
NL7900280A NL7900280A NL7900280A NL7900280A NL 7900280 A NL7900280 A NL 7900280A NL 7900280 A NL7900280 A NL 7900280A NL 7900280 A NL7900280 A NL 7900280A NL 7900280 A NL7900280 A NL 7900280A
Authority
NL
Netherlands
Prior art keywords
semiconductor
opening
zone
layer
insulating layer
Prior art date
Application number
NL7900280A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL7900280A priority Critical patent/NL7900280A/nl
Priority to US06/111,401 priority patent/US4430793A/en
Priority to GB8001003A priority patent/GB2040568B/en
Priority to FR8000589A priority patent/FR2446540A1/fr
Priority to DE19803001032 priority patent/DE3001032A1/de
Priority to JP301180A priority patent/JPS5596653A/ja
Publication of NL7900280A publication Critical patent/NL7900280A/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42304—Base electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
NL7900280A 1979-01-15 1979-01-15 Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. NL7900280A (nl)

Priority Applications (6)

Application Number Priority Date Filing Date Title
NL7900280A NL7900280A (nl) 1979-01-15 1979-01-15 Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.
US06/111,401 US4430793A (en) 1979-01-15 1980-01-11 Method of manufacturing a semiconductor device utilizing selective introduction of a dopant thru a deposited semiconductor contact layer
GB8001003A GB2040568B (en) 1979-01-15 1980-01-11 Semiconductor device connection conductors
FR8000589A FR2446540A1 (fr) 1979-01-15 1980-01-11 Dispositif semi-conducteur tres petit, notamment transistor pour circuits integres et procede pour le fabriquer
DE19803001032 DE3001032A1 (de) 1979-01-15 1980-01-12 Halbleiteranordnung und verfahren zu deren herstellung
JP301180A JPS5596653A (en) 1979-01-15 1980-01-14 Semiconductor device and method of fabricating same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7900280A NL7900280A (nl) 1979-01-15 1979-01-15 Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.
NL7900280 1979-01-15

Publications (1)

Publication Number Publication Date
NL7900280A true NL7900280A (nl) 1980-07-17

Family

ID=19832451

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7900280A NL7900280A (nl) 1979-01-15 1979-01-15 Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.

Country Status (6)

Country Link
US (1) US4430793A (pt)
JP (1) JPS5596653A (pt)
DE (1) DE3001032A1 (pt)
FR (1) FR2446540A1 (pt)
GB (1) GB2040568B (pt)
NL (1) NL7900280A (pt)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5734359A (en) * 1980-08-08 1982-02-24 Toshiba Corp Semiconductor device and manufacture thereof
JPS5737870A (en) * 1980-08-20 1982-03-02 Toshiba Corp Semiconductor device
EP0064613B1 (en) * 1981-04-30 1986-10-29 Kabushiki Kaisha Toshiba Semiconductor device having a plurality of element units operable in parallel
JPS5866359A (ja) * 1981-09-28 1983-04-20 Fujitsu Ltd 半導体装置の製造方法
NL8105920A (nl) * 1981-12-31 1983-07-18 Philips Nv Halfgeleiderinrichting en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.
JPS58202525A (ja) * 1982-05-21 1983-11-25 Toshiba Corp 半導体装置の製造方法
US4712125A (en) * 1982-08-06 1987-12-08 International Business Machines Corporation Structure for contacting a narrow width PN junction region
US4905075A (en) * 1986-05-05 1990-02-27 General Electric Company Hermetic semiconductor enclosure
US4837176A (en) * 1987-01-30 1989-06-06 Motorola Inc. Integrated circuit structures having polycrystalline electrode contacts and process
US5067002A (en) * 1987-01-30 1991-11-19 Motorola, Inc. Integrated circuit structures having polycrystalline electrode contacts
US4772566A (en) * 1987-07-01 1988-09-20 Motorola Inc. Single tub transistor means and method
US5254495A (en) * 1993-05-07 1993-10-19 United Microelectronics Corporation Salicide recessed local oxidation of silicon
DE19832329A1 (de) 1997-07-31 1999-02-04 Siemens Ag Verfahren zur Strukturierung von Halbleitern mit hoher Präzision, guter Homogenität und Reproduzierbarkeit

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3611067A (en) * 1970-04-20 1971-10-05 Fairchild Camera Instr Co Complementary npn/pnp structure for monolithic integrated circuits
US4074304A (en) * 1974-10-04 1978-02-14 Nippon Electric Company, Ltd. Semiconductor device having a miniature junction area and process for fabricating same
JPS52119186A (en) * 1976-03-31 1977-10-06 Nec Corp Manufacture of semiconductor
JPS5338992A (en) * 1976-09-22 1978-04-10 Hitachi Ltd Manufacture of semiconductor device
NL7612883A (nl) * 1976-11-19 1978-05-23 Philips Nv Halfgeleiderinrichting, en werkwijze ter ver- vaardiging daarvan.
US4190949A (en) * 1977-11-14 1980-03-04 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing a semiconductor device

Also Published As

Publication number Publication date
FR2446540A1 (fr) 1980-08-08
FR2446540B1 (pt) 1985-05-17
JPS5596653A (en) 1980-07-23
GB2040568A (en) 1980-08-28
GB2040568B (en) 1983-03-02
DE3001032A1 (de) 1980-07-24
US4430793A (en) 1984-02-14

Similar Documents

Publication Publication Date Title
US5140388A (en) Vertical metal-oxide semiconductor devices
US6750526B2 (en) Semiconductor device with trench isolation having reduced leak current
JPS5934661A (ja) 集積回路構造体
US4283837A (en) Semiconductor device and method of manufacturing same
KR950006472B1 (ko) 반도체기억장치
JPS587840A (ja) 半導体集積回路
NL7900280A (nl) Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.
NL8003612A (nl) Werkwijze ter vervaardiging van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd door toepassing van deze werkwijze.
EP0058124B1 (en) Polycrystalline silicon schottky diode array and method of manufacturing
JP3790282B2 (ja) バイポーラトランジスタ及びその製造方法
US3964092A (en) Semiconductor devices with conductive layer structure
EP0018173B1 (en) A programmable read-only memory device
US4628339A (en) Polycrystalline silicon Schottky diode array
US4183037A (en) Semiconductor device
US4799099A (en) Bipolar transistor in isolation well with angled corners
JPS6224944B2 (pt)
JPS58186965A (ja) トランジスタ
JPS6048111B2 (ja) 不揮発性半導体記憶装置
JPS62190875A (ja) バイポ−ラ・トランジスタとその製法
JPS60241261A (ja) 半導体装置およびその製造方法
JP2504529B2 (ja) バイポ―ラ形薄膜半導体装置
JP3703427B2 (ja) Ｍｏｓ電界効果トランジスタ
JPS63199454A (ja) 半導体装置
JPH0582637A (ja) 半導体装置
JPH0621073A (ja) 横形バイポーラトランジスタおよびその形成方法

Legal Events

Date Code Title Description
A1B A search report has been drawn up
A85 Still pending on 85-01-01
BV The patent application has lapsed