FR2446540A1 - Dispositif semi-conducteur tres petit, notamment transistor pour circuits integres et procede pour le fabriquer - Google Patents
Dispositif semi-conducteur tres petit, notamment transistor pour circuits integres et procede pour le fabriquerInfo
- Publication number
- FR2446540A1 FR2446540A1 FR8000589A FR8000589A FR2446540A1 FR 2446540 A1 FR2446540 A1 FR 2446540A1 FR 8000589 A FR8000589 A FR 8000589A FR 8000589 A FR8000589 A FR 8000589A FR 2446540 A1 FR2446540 A1 FR 2446540A1
- Authority
- FR
- France
- Prior art keywords
- semiconductor device
- transistor
- same
- opening
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 7
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title 1
- 239000013078 crystal Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42304—Base electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
- Bipolar Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Dispositif semi-conducteur comportant, en particulier, un transistor présentant trois connexions qui ont la forme de parties dopées d'une couche semi-conductrice principalement polycristalline, qui s'étendent sur une couche isolante et qui se prolongent toutes trois jusque dans une même ouverture prévue dans cette couche isolante. Dans l'ouverture, la couche semi-conductrice déposée est présente sur la surface d'un corps semi-conducteur monocristallin et les parties dopées sont adjacentes aux trois zones semiconductrices du transistor. Pendant la fabrication, après que la couche semi-conductrice ait été appliquée sur la couche isolante et dans l'ouverture, au moins deux opérations de dopage locales sont exécutées, le bord de l'ouverture restant toujours couvert.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7900280A NL7900280A (nl) | 1979-01-15 | 1979-01-15 | Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2446540A1 true FR2446540A1 (fr) | 1980-08-08 |
FR2446540B1 FR2446540B1 (fr) | 1985-05-17 |
Family
ID=19832451
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8000589A Granted FR2446540A1 (fr) | 1979-01-15 | 1980-01-11 | Dispositif semi-conducteur tres petit, notamment transistor pour circuits integres et procede pour le fabriquer |
Country Status (6)
Country | Link |
---|---|
US (1) | US4430793A (fr) |
JP (1) | JPS5596653A (fr) |
DE (1) | DE3001032A1 (fr) |
FR (1) | FR2446540A1 (fr) |
GB (1) | GB2040568B (fr) |
NL (1) | NL7900280A (fr) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5734359A (en) * | 1980-08-08 | 1982-02-24 | Toshiba Corp | Semiconductor device and manufacture thereof |
JPS5737870A (en) * | 1980-08-20 | 1982-03-02 | Toshiba Corp | Semiconductor device |
EP0064613B1 (fr) * | 1981-04-30 | 1986-10-29 | Kabushiki Kaisha Toshiba | Dispositif semiconducteur ayant une pluralité d'éléments qui fonctionnent en parallèle |
JPS5866359A (ja) * | 1981-09-28 | 1983-04-20 | Fujitsu Ltd | 半導体装置の製造方法 |
NL8105920A (nl) * | 1981-12-31 | 1983-07-18 | Philips Nv | Halfgeleiderinrichting en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting. |
JPS58202525A (ja) * | 1982-05-21 | 1983-11-25 | Toshiba Corp | 半導体装置の製造方法 |
US4712125A (en) * | 1982-08-06 | 1987-12-08 | International Business Machines Corporation | Structure for contacting a narrow width PN junction region |
US4905075A (en) * | 1986-05-05 | 1990-02-27 | General Electric Company | Hermetic semiconductor enclosure |
US4837176A (en) * | 1987-01-30 | 1989-06-06 | Motorola Inc. | Integrated circuit structures having polycrystalline electrode contacts and process |
US5067002A (en) * | 1987-01-30 | 1991-11-19 | Motorola, Inc. | Integrated circuit structures having polycrystalline electrode contacts |
US4772566A (en) * | 1987-07-01 | 1988-09-20 | Motorola Inc. | Single tub transistor means and method |
US5254495A (en) * | 1993-05-07 | 1993-10-19 | United Microelectronics Corporation | Salicide recessed local oxidation of silicon |
DE19832329A1 (de) | 1997-07-31 | 1999-02-04 | Siemens Ag | Verfahren zur Strukturierung von Halbleitern mit hoher Präzision, guter Homogenität und Reproduzierbarkeit |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3611067A (en) * | 1970-04-20 | 1971-10-05 | Fairchild Camera Instr Co | Complementary npn/pnp structure for monolithic integrated circuits |
US4074304A (en) * | 1974-10-04 | 1978-02-14 | Nippon Electric Company, Ltd. | Semiconductor device having a miniature junction area and process for fabricating same |
JPS52119186A (en) * | 1976-03-31 | 1977-10-06 | Nec Corp | Manufacture of semiconductor |
JPS5338992A (en) * | 1976-09-22 | 1978-04-10 | Hitachi Ltd | Manufacture of semiconductor device |
NL7612883A (nl) * | 1976-11-19 | 1978-05-23 | Philips Nv | Halfgeleiderinrichting, en werkwijze ter ver- vaardiging daarvan. |
DE2849373A1 (de) * | 1977-11-14 | 1979-05-17 | Tokyo Shibaura Electric Co | Verfahren zur herstellung einer halbleitervorrichtung |
-
1979
- 1979-01-15 NL NL7900280A patent/NL7900280A/nl not_active Application Discontinuation
-
1980
- 1980-01-11 FR FR8000589A patent/FR2446540A1/fr active Granted
- 1980-01-11 US US06/111,401 patent/US4430793A/en not_active Expired - Lifetime
- 1980-01-11 GB GB8001003A patent/GB2040568B/en not_active Expired
- 1980-01-12 DE DE19803001032 patent/DE3001032A1/de not_active Withdrawn
- 1980-01-14 JP JP301180A patent/JPS5596653A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
DE3001032A1 (de) | 1980-07-24 |
GB2040568B (en) | 1983-03-02 |
GB2040568A (en) | 1980-08-28 |
NL7900280A (nl) | 1980-07-17 |
JPS5596653A (en) | 1980-07-23 |
FR2446540B1 (fr) | 1985-05-17 |
US4430793A (en) | 1984-02-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |