NL193918B - Werkwijze voor het vervaardigen van een halfgeleiderinrichting bestaande uit CMOS-transistoren, bipolaire verticale transistoren en dioden. - Google Patents

Werkwijze voor het vervaardigen van een halfgeleiderinrichting bestaande uit CMOS-transistoren, bipolaire verticale transistoren en dioden.

Info

Publication number
NL193918B
NL193918B NL8700242A NL8700242A NL193918B NL 193918 B NL193918 B NL 193918B NL 8700242 A NL8700242 A NL 8700242A NL 8700242 A NL8700242 A NL 8700242A NL 193918 B NL193918 B NL 193918B
Authority
NL
Netherlands
Prior art keywords
transistors
diodes
manufacturing
semiconductor device
device consisting
Prior art date
Application number
NL8700242A
Other languages
English (en)
Other versions
NL193918C (nl
NL8700242A (nl
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from IT2077986U external-priority patent/IT210852Z2/it
Priority claimed from IT19231/86A external-priority patent/IT1188609B/it
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Publication of NL8700242A publication Critical patent/NL8700242A/nl
Publication of NL193918B publication Critical patent/NL193918B/nl
Application granted granted Critical
Publication of NL193918C publication Critical patent/NL193918C/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
NL8700242A 1986-01-30 1987-01-30 Werkwijze voor het vervaardigen van een halfgeleiderinrichting bestaande uit CMOS-transistoren, bipolaire verticale transistoren en dioden. NL193918C (nl)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
IT2077986U IT210852Z2 (it) 1986-01-30 1986-01-30 Dispositivo monolitico a semiconduttore contenente transistori bipolari a giunzione, transitori cmos e dmoscomplementari e diodi a bassa perdita.
IT19231/86A IT1188609B (it) 1986-01-30 1986-01-30 Procedimento per la fabbricazione di dispositivi monolitici a semiconduttore contenenti transistori bipolari a giunzione,transistori cmos e dmos complementari e diodi a bassa perdita
IT1923186 1986-01-30
IT2077986 1986-06-13

Publications (3)

Publication Number Publication Date
NL8700242A NL8700242A (nl) 1987-08-17
NL193918B true NL193918B (nl) 2000-10-02
NL193918C NL193918C (nl) 2001-02-05

Family

ID=26327100

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8700242A NL193918C (nl) 1986-01-30 1987-01-30 Werkwijze voor het vervaardigen van een halfgeleiderinrichting bestaande uit CMOS-transistoren, bipolaire verticale transistoren en dioden.

Country Status (6)

Country Link
US (1) US4887142A (nl)
DE (1) DE3702810C2 (nl)
FR (1) FR2593640B1 (nl)
GB (1) GB2186117B (nl)
NL (1) NL193918C (nl)
SE (1) SE502803C2 (nl)

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JPH05226589A (ja) * 1992-02-17 1993-09-03 Mitsubishi Electric Corp Ｃ−ＢｉＣＭＯＳ型半導体装置およびその製造方法
JP3226053B2 (ja) * 1992-06-03 2001-11-05 富士電機株式会社 半導体装置の製造方法
US5422508A (en) * 1992-09-21 1995-06-06 Siliconix Incorporated BiCDMOS structure
US5328866A (en) * 1992-09-21 1994-07-12 Siliconix Incorporated Low temperature oxide layer over field implant mask
US5559044A (en) * 1992-09-21 1996-09-24 Siliconix Incorporated BiCDMOS process technology
US5439842A (en) * 1992-09-21 1995-08-08 Siliconix Incorporated Low temperature oxide layer over field implant mask
US5648281A (en) * 1992-09-21 1997-07-15 Siliconix Incorporated Method for forming an isolation structure and a bipolar transistor on a semiconductor substrate
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US5356822A (en) * 1994-01-21 1994-10-18 Alliedsignal Inc. Method for making all complementary BiCDMOS devices
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US5610079A (en) * 1995-06-19 1997-03-11 Reliance Electric Industrial Company Self-biased moat for parasitic current suppression in integrated circuits
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JP3317345B2 (ja) * 1999-07-23 2002-08-26 日本電気株式会社 半導体装置
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US6911694B2 (en) * 2001-06-27 2005-06-28 Ricoh Company, Ltd. Semiconductor device and method for fabricating such device
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US8816443B2 (en) * 2001-10-12 2014-08-26 Quantum Semiconductor Llc Method of fabricating heterojunction photodiodes with CMOS
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DE10351014B4 (de) * 2003-10-31 2008-06-05 Infineon Technologies Ag Diodenstruktur und integrale Leistungsschaltanordnung mit Low-Leakage-Diode
US7772653B1 (en) 2004-02-11 2010-08-10 National Semiconductor Corporation Semiconductor apparatus comprising bipolar transistors and metal oxide semiconductor transistors
US7304354B2 (en) * 2004-02-17 2007-12-04 Silicon Space Technology Corp. Buried guard ring and radiation hardened isolation structures and fabrication methods
US7544558B2 (en) * 2006-03-13 2009-06-09 Bcd Semiconductor Manufacturing Limited Method for integrating DMOS into sub-micron CMOS process
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Also Published As

Publication number Publication date
FR2593640B1 (fr) 1990-11-30
GB2186117B (en) 1989-11-01
US4887142A (en) 1989-12-12
NL193918C (nl) 2001-02-05
NL8700242A (nl) 1987-08-17
GB2186117A (en) 1987-08-05
FR2593640A1 (fr) 1987-07-31
GB8701769D0 (en) 1987-03-04
DE3702810A1 (de) 1987-08-06
DE3702810C2 (de) 1998-11-12
SE8700351D0 (sv) 1987-01-29
SE8700351L (sv) 1987-07-31
SE502803C2 (sv) 1996-01-15

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Legal Events

Date Code Title Description
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
V1 Lapsed because of non-payment of the annual fee

Effective date: 20020801