NL184552C - Halfgeleiderinrichting voor hoge spanningen. - Google Patents

Halfgeleiderinrichting voor hoge spanningen.

Info

Publication number
NL184552C
NL184552C NLAANVRAGE7807835,A NL7807835A NL184552C NL 184552 C NL184552 C NL 184552C NL 7807835 A NL7807835 A NL 7807835A NL 184552 C NL184552 C NL 184552C
Authority
NL
Netherlands
Prior art keywords
semiconductor
high voltages
voltages
Prior art date
Application number
NLAANVRAGE7807835,A
Other languages
English (en)
Dutch (nl)
Other versions
NL184552B (nl
NL7807835A (nl
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NLAANVRAGE7807835,A priority Critical patent/NL184552C/xx
Priority to CA319,526A priority patent/CA1131801A/en
Priority to DE2901193A priority patent/DE2901193C2/de
Priority to BR7900229A priority patent/BR7900229A/pt
Priority to IT19305/79A priority patent/IT1110026B/it
Priority to SE7900337A priority patent/SE432497B/sv
Priority to GB791412A priority patent/GB2013029B/en
Priority to US06/004,004 priority patent/US4292642A/en
Priority to AT0031179A priority patent/AT380975B/de
Priority to AU43405/79A priority patent/AU518446B2/en
Priority to CH41779A priority patent/CH638928A5/de
Priority to ES476907A priority patent/ES476907A1/es
Priority to PL1979212822A priority patent/PL116562B1/pl
Priority to FR7901086A priority patent/FR2415370A1/fr
Priority to JP346579A priority patent/JPS54109780A/ja
Priority to BE0/192972A priority patent/BE873570A/xx
Priority to DE2954286A priority patent/DE2954286C2/de
Priority to DE2927662A priority patent/DE2927662C2/de
Priority to CA332,190A priority patent/CA1134055A/en
Priority to AU49061/79A priority patent/AU521670B2/en
Priority to PL1979217279D priority patent/PL119597B1/pl
Priority to CH6783/79A priority patent/CH648693A5/de
Priority to PL21727979A priority patent/PL217279A1/xx
Priority to GB7925316A priority patent/GB2026240B/en
Priority to IT24514/79A priority patent/IT1122226B/it
Priority to ES482691A priority patent/ES482691A1/es
Priority to JP54092147A priority patent/JPS5924550B2/ja
Priority to BR7904692A priority patent/BR7904692A/pt
Priority to BE0/196422A priority patent/BE877850A/fr
Priority to SE7906289A priority patent/SE437094B/sv
Priority to FR7918941A priority patent/FR2434487A1/fr
Priority to AT0509379A priority patent/AT382042B/de
Publication of NL7807835A publication Critical patent/NL7807835A/nl
Publication of NL184552B publication Critical patent/NL184552B/xx
Application granted granted Critical
Publication of NL184552C publication Critical patent/NL184552C/xx

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H—ELECTRICITY
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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    • H—ELECTRICITY
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    • H01L29/1025—Channel region of field-effect devices
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    • H01L29/1058—Channel region of field-effect devices of field-effect transistors with PN junction gate
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1087—Substrate region of field-effect devices of field-effect transistors with insulated gate characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect
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    • H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
NLAANVRAGE7807835,A 1978-01-18 1978-07-24 Halfgeleiderinrichting voor hoge spanningen. NL184552C (nl)

Priority Applications (32)

Application Number Priority Date Filing Date Title
NLAANVRAGE7807835,A NL184552C (nl) 1978-07-24 1978-07-24 Halfgeleiderinrichting voor hoge spanningen.
CA319,526A CA1131801A (en) 1978-01-18 1979-01-11 Semiconductor device
DE2901193A DE2901193C2 (de) 1978-01-18 1979-01-13 Halbleiteranordnung
IT19305/79A IT1110026B (it) 1978-01-18 1979-01-15 Dispositivo semiconduttore
SE7900337A SE432497B (sv) 1978-01-18 1979-01-15 Halvledaranordning med ett bipolert halvledarkopplingselement
GB791412A GB2013029B (en) 1978-01-18 1979-01-15 Semiconductor device
BR7900229A BR7900229A (pt) 1978-01-18 1979-01-15 Dispositivo semicondutor
US06/004,004 US4292642A (en) 1978-01-18 1979-01-16 Semiconductor device
AT0031179A AT380975B (de) 1978-01-18 1979-01-16 Halbleiteranordnung mit mindestens einem bipolaren hochspannungshalbleiterschaltungselement
AU43405/79A AU518446B2 (en) 1978-01-18 1979-01-16 Planar bipolar semiconductor device
CH41779A CH638928A5 (de) 1978-01-18 1979-01-16 Halbleiteranordnung.
ES476907A ES476907A1 (es) 1978-01-18 1979-01-16 Un dispositivo semiconductor perfeccionado.
PL1979212822A PL116562B1 (en) 1978-01-18 1979-01-16 Semiconductor instrument
FR7901086A FR2415370A1 (fr) 1978-01-18 1979-01-17 Dispositif semiconducteur muni d'un composant semiconducteur bipolaire planaire haute tension
BE0/192972A BE873570A (fr) 1978-01-18 1979-01-18 Dispositif semiconducteur muni d'un composant semiconducteur bipolaire planaire haute tension
JP346579A JPS54109780A (en) 1978-01-18 1979-01-18 Semiconductor
DE2954286A DE2954286C2 (de) 1978-07-24 1979-07-09 Halbleiterbauelement
DE2927662A DE2927662C2 (de) 1978-07-24 1979-07-09 Halbleiteranordnung
AU49061/79A AU521670B2 (en) 1978-07-24 1979-07-19 Field effect transistor
CA332,190A CA1134055A (en) 1978-07-24 1979-07-19 Semiconductor device
ES482691A ES482691A1 (es) 1978-07-24 1979-07-20 Un dispositivo semiconductor.
PL21727979A PL217279A1 (de) 1978-07-24 1979-07-20
GB7925316A GB2026240B (en) 1978-07-24 1979-07-20 Semiconductor devices
IT24514/79A IT1122226B (it) 1978-07-24 1979-07-20 Dispositivo semiconduttore
PL1979217279D PL119597B1 (en) 1978-07-24 1979-07-20 Semiconductor device
CH6783/79A CH648693A5 (de) 1978-07-24 1979-07-20 Halbleiteranordnung mit mindestens einem feldeffekttransistor.
JP54092147A JPS5924550B2 (ja) 1978-07-24 1979-07-21 半導体装置
BR7904692A BR7904692A (pt) 1978-07-24 1979-07-23 Dispositivo semicondutor
BE0/196422A BE877850A (fr) 1978-07-24 1979-07-23 Dispositif semiconducteur
SE7906289A SE437094B (sv) 1978-07-24 1979-07-23 Halvledaranordning bland annat innefattande en felteffekttransistor
FR7918941A FR2434487A1 (fr) 1978-07-24 1979-07-23 Dispositif semi-conducteur, a surface plane, comportant un transistor a effet de champ d'une nouvelle structure
AT0509379A AT382042B (de) 1978-07-24 1979-07-24 Halbleiteranordnung mit mindestens einem feldeffekttransistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7807835 1978-07-24
NLAANVRAGE7807835,A NL184552C (nl) 1978-07-24 1978-07-24 Halfgeleiderinrichting voor hoge spanningen.

Publications (3)

Publication Number Publication Date
NL7807835A NL7807835A (nl) 1980-01-28
NL184552B NL184552B (nl) 1989-03-16
NL184552C true NL184552C (nl) 1989-08-16

Family

ID=19831291

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7807835,A NL184552C (nl) 1978-01-18 1978-07-24 Halfgeleiderinrichting voor hoge spanningen.

Country Status (15)

Country Link
JP (1) JPS5924550B2 (de)
AT (1) AT382042B (de)
AU (1) AU521670B2 (de)
BE (1) BE877850A (de)
BR (1) BR7904692A (de)
CA (1) CA1134055A (de)
CH (1) CH648693A5 (de)
DE (2) DE2927662C2 (de)
ES (1) ES482691A1 (de)
FR (1) FR2434487A1 (de)
GB (1) GB2026240B (de)
IT (1) IT1122226B (de)
NL (1) NL184552C (de)
PL (2) PL119597B1 (de)
SE (1) SE437094B (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4523368A (en) * 1980-03-03 1985-06-18 Raytheon Company Semiconductor devices and manufacturing methods
GB2070858B (en) * 1980-03-03 1985-02-06 Raytheon Co Shallow channel field effect transistor
US4300150A (en) * 1980-06-16 1981-11-10 North American Philips Corporation Lateral double-diffused MOS transistor device
NL187415C (nl) * 1980-09-08 1991-09-16 Philips Nv Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte.
US4485392A (en) * 1981-12-28 1984-11-27 North American Philips Corporation Lateral junction field effect transistor device
GB2133621B (en) * 1983-01-11 1987-02-04 Emi Ltd Junction field effect transistor
NL8304256A (nl) * 1983-12-09 1985-07-01 Philips Nv Halfgeleiderinrichting.

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL161621C (nl) * 1968-10-16 1980-02-15 Philips Nv Halfgeleiderinrichting met veldeffecttransistor.
JPS4932028B1 (de) * 1969-06-24 1974-08-27
US3814992A (en) * 1972-06-22 1974-06-04 Ibm High performance fet
US4037245A (en) * 1975-11-28 1977-07-19 General Electric Company Electric field controlled diode with a current controlling surface grid

Also Published As

Publication number Publication date
BE877850A (fr) 1980-01-23
JPS5518098A (en) 1980-02-07
JPS5924550B2 (ja) 1984-06-09
ATA509379A (de) 1986-05-15
DE2954286C2 (de) 1986-04-17
PL119597B1 (en) 1982-01-30
PL217279A1 (de) 1980-08-11
GB2026240A (en) 1980-01-30
IT1122226B (it) 1986-04-23
AU4906179A (en) 1980-01-31
GB2026240B (en) 1982-12-01
CA1134055A (en) 1982-10-19
SE437094B (sv) 1985-02-04
FR2434487B1 (de) 1984-06-29
AU521670B2 (en) 1982-04-22
NL184552B (nl) 1989-03-16
SE7906289L (sv) 1980-01-25
DE2927662A1 (de) 1980-02-07
BR7904692A (pt) 1980-04-15
IT7924514A0 (it) 1979-07-20
ES482691A1 (es) 1980-03-01
CH648693A5 (de) 1985-03-29
FR2434487A1 (fr) 1980-03-21
DE2927662C2 (de) 1984-01-12
NL7807835A (nl) 1980-01-28
AT382042B (de) 1986-12-29

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