SE437094B - Halvledaranordning bland annat innefattande en felteffekttransistor - Google Patents
Halvledaranordning bland annat innefattande en felteffekttransistorInfo
- Publication number
- SE437094B SE437094B SE7906289A SE7906289A SE437094B SE 437094 B SE437094 B SE 437094B SE 7906289 A SE7906289 A SE 7906289A SE 7906289 A SE7906289 A SE 7906289A SE 437094 B SE437094 B SE 437094B
- Authority
- SE
- Sweden
- Prior art keywords
- region
- area
- zone
- voltage
- electrode
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 57
- 230000007704 transition Effects 0.000 claims description 62
- 230000015556 catabolic process Effects 0.000 claims description 25
- 230000005669 field effect Effects 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000002800 charge carrier Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- -1 silicon nitride Chemical compound 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/1025—Channel region of field-effect devices
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- H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors
- H01L29/803—Programmable transistors, e.g. with charge-trapping quantum well
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- H01L29/772—Field effect transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
Landscapes
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NLAANVRAGE7807835,A NL184552C (nl) | 1978-07-24 | 1978-07-24 | Halfgeleiderinrichting voor hoge spanningen. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| SE7906289L SE7906289L (sv) | 1980-01-25 |
| SE437094B true SE437094B (sv) | 1985-02-04 |
Family
ID=19831291
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE7906289A SE437094B (sv) | 1978-07-24 | 1979-07-23 | Halvledaranordning bland annat innefattande en felteffekttransistor |
Country Status (15)
| Country | Link |
|---|---|
| JP (1) | JPS5924550B2 (de) |
| AT (1) | AT382042B (de) |
| AU (1) | AU521670B2 (de) |
| BE (1) | BE877850A (de) |
| BR (1) | BR7904692A (de) |
| CA (1) | CA1134055A (de) |
| CH (1) | CH648693A5 (de) |
| DE (2) | DE2927662C2 (de) |
| ES (1) | ES482691A1 (de) |
| FR (1) | FR2434487A1 (de) |
| GB (1) | GB2026240B (de) |
| IT (1) | IT1122226B (de) |
| NL (1) | NL184552C (de) |
| PL (2) | PL119597B1 (de) |
| SE (1) | SE437094B (de) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4523368A (en) * | 1980-03-03 | 1985-06-18 | Raytheon Company | Semiconductor devices and manufacturing methods |
| GB2070858B (en) * | 1980-03-03 | 1985-02-06 | Raytheon Co | Shallow channel field effect transistor |
| US4300150A (en) * | 1980-06-16 | 1981-11-10 | North American Philips Corporation | Lateral double-diffused MOS transistor device |
| NL187415C (nl) * | 1980-09-08 | 1991-09-16 | Philips Nv | Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte. |
| US4485392A (en) * | 1981-12-28 | 1984-11-27 | North American Philips Corporation | Lateral junction field effect transistor device |
| GB2133621B (en) * | 1983-01-11 | 1987-02-04 | Emi Ltd | Junction field effect transistor |
| NL8304256A (nl) * | 1983-12-09 | 1985-07-01 | Philips Nv | Halfgeleiderinrichting. |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL161621C (nl) * | 1968-10-16 | 1980-02-15 | Philips Nv | Halfgeleiderinrichting met veldeffecttransistor. |
| JPS4932028B1 (de) * | 1969-06-24 | 1974-08-27 | ||
| US3814992A (en) * | 1972-06-22 | 1974-06-04 | Ibm | High performance fet |
| US4037245A (en) * | 1975-11-28 | 1977-07-19 | General Electric Company | Electric field controlled diode with a current controlling surface grid |
-
1978
- 1978-07-24 NL NLAANVRAGE7807835,A patent/NL184552C/xx not_active IP Right Cessation
-
1979
- 1979-07-09 DE DE2927662A patent/DE2927662C2/de not_active Expired
- 1979-07-09 DE DE2954286A patent/DE2954286C2/de not_active Expired
- 1979-07-19 AU AU49061/79A patent/AU521670B2/en not_active Ceased
- 1979-07-19 CA CA332,190A patent/CA1134055A/en not_active Expired
- 1979-07-20 PL PL1979217279D patent/PL119597B1/pl unknown
- 1979-07-20 PL PL21727979A patent/PL217279A1/xx unknown
- 1979-07-20 GB GB7925316A patent/GB2026240B/en not_active Expired
- 1979-07-20 ES ES482691A patent/ES482691A1/es not_active Expired
- 1979-07-20 IT IT24514/79A patent/IT1122226B/it active
- 1979-07-20 CH CH6783/79A patent/CH648693A5/de not_active IP Right Cessation
- 1979-07-21 JP JP54092147A patent/JPS5924550B2/ja not_active Expired
- 1979-07-23 BR BR7904692A patent/BR7904692A/pt unknown
- 1979-07-23 FR FR7918941A patent/FR2434487A1/fr active Granted
- 1979-07-23 BE BE0/196422A patent/BE877850A/fr not_active IP Right Cessation
- 1979-07-23 SE SE7906289A patent/SE437094B/sv not_active IP Right Cessation
- 1979-07-24 AT AT0509379A patent/AT382042B/de not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| BE877850A (fr) | 1980-01-23 |
| JPS5518098A (en) | 1980-02-07 |
| JPS5924550B2 (ja) | 1984-06-09 |
| ATA509379A (de) | 1986-05-15 |
| DE2954286C2 (de) | 1986-04-17 |
| PL119597B1 (en) | 1982-01-30 |
| PL217279A1 (de) | 1980-08-11 |
| GB2026240A (en) | 1980-01-30 |
| IT1122226B (it) | 1986-04-23 |
| AU4906179A (en) | 1980-01-31 |
| GB2026240B (en) | 1982-12-01 |
| CA1134055A (en) | 1982-10-19 |
| FR2434487B1 (de) | 1984-06-29 |
| AU521670B2 (en) | 1982-04-22 |
| NL184552C (nl) | 1989-08-16 |
| NL184552B (nl) | 1989-03-16 |
| SE7906289L (sv) | 1980-01-25 |
| DE2927662A1 (de) | 1980-02-07 |
| BR7904692A (pt) | 1980-04-15 |
| IT7924514A0 (it) | 1979-07-20 |
| ES482691A1 (es) | 1980-03-01 |
| CH648693A5 (de) | 1985-03-29 |
| FR2434487A1 (fr) | 1980-03-21 |
| DE2927662C2 (de) | 1984-01-12 |
| NL7807835A (nl) | 1980-01-28 |
| AT382042B (de) | 1986-12-29 |
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