NL182520C - Halfgeleiderinrichting van het ladinggekoppelde type voor het opslaan en in volgorde overdragen van pakketten ladingdragers. - Google Patents
Halfgeleiderinrichting van het ladinggekoppelde type voor het opslaan en in volgorde overdragen van pakketten ladingdragers.Info
- Publication number
- NL182520C NL182520C NLAANVRAGE7200519,A NL7200519A NL182520C NL 182520 C NL182520 C NL 182520C NL 7200519 A NL7200519 A NL 7200519A NL 182520 C NL182520 C NL 182520C
- Authority
- NL
- Netherlands
- Prior art keywords
- packages
- storing
- load
- semiconductor device
- order transfer
- Prior art date
Links
- 239000000969 carrier Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76825—Structures for regeneration, refreshing, leakage compensation or the like
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
- G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/287—Organisation of a multiplicity of shift registers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76808—Input structures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10638171A | 1971-01-14 | 1971-01-14 | |
US22223772A | 1972-01-31 | 1972-01-31 | |
US22223872A | 1972-01-31 | 1972-01-31 |
Publications (3)
Publication Number | Publication Date |
---|---|
NL7200519A NL7200519A (de) | 1972-07-18 |
NL182520B NL182520B (nl) | 1987-10-16 |
NL182520C true NL182520C (nl) | 1988-03-16 |
Family
ID=27380105
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NLAANVRAGE7200519,A NL182520C (nl) | 1971-01-14 | 1972-01-13 | Halfgeleiderinrichting van het ladinggekoppelde type voor het opslaan en in volgorde overdragen van pakketten ladingdragers. |
Country Status (6)
Country | Link |
---|---|
US (2) | US3758794A (de) |
AU (1) | AU461729B2 (de) |
DE (1) | DE2201150C3 (de) |
FR (1) | FR2121870B1 (de) |
GB (9) | GB1377124A (de) |
NL (1) | NL182520C (de) |
Families Citing this family (93)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4217600A (en) * | 1970-10-22 | 1980-08-12 | Bell Telephone Laboratories, Incorporated | Charge transfer logic apparatus |
US3988773A (en) * | 1970-10-28 | 1976-10-26 | General Electric Company | Self-registered surface charge receive and regeneration devices and methods |
US3902187A (en) * | 1971-04-01 | 1975-08-26 | Gen Electric | Surface charge storage and transfer devices |
US3806772A (en) * | 1972-02-07 | 1974-04-23 | Fairchild Camera Instr Co | Charge coupled amplifier |
NL7212509A (de) * | 1972-09-15 | 1974-03-19 | ||
US3897282A (en) * | 1972-10-17 | 1975-07-29 | Northern Electric Co | Method of forming silicon gate device structures with two or more gate levels |
CA983618A (en) * | 1973-04-23 | 1976-02-10 | Robert J. Strain | Analog inverter for use in charge transfer apparatus |
US3876989A (en) * | 1973-06-18 | 1975-04-08 | Ibm | Ccd optical sensor storage device having continuous light exposure compensation |
US4028715A (en) * | 1973-06-25 | 1977-06-07 | Texas Instruments Incorporated | Use of floating diffusion for low-noise electrical inputs in CCD's |
US3889245A (en) * | 1973-07-02 | 1975-06-10 | Texas Instruments Inc | Metal-insulator-semiconductor compatible charge transfer device memory system |
US3967306A (en) * | 1973-08-01 | 1976-06-29 | Trw Inc. | Asymmetrical well charge coupled device |
US3906359A (en) * | 1973-08-06 | 1975-09-16 | Westinghouse Electric Corp | Magnetic field sensing CCD device with a slower output sampling rate than the transfer rate yielding an integration |
US3881117A (en) * | 1973-09-10 | 1975-04-29 | Bell Telephone Labor Inc | Input circuit for semiconductor charge transfer devices |
US3947698A (en) * | 1973-09-17 | 1976-03-30 | Texas Instruments Incorporated | Charge coupled device multiplexer |
DE2348490C3 (de) * | 1973-09-26 | 1979-07-26 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Betreiben eines Ladungsverschiebespeichers |
GB1442841A (en) * | 1973-11-13 | 1976-07-14 | Secr Defence | Charge coupled devices |
DE2400208A1 (de) * | 1974-01-03 | 1975-07-17 | Siemens Ag | Ladungsgekoppelte uebertragungsanordnung bei der zur ladungsuebertragung majoritaetstraeger verwendet werden |
FR2258783B1 (de) * | 1974-01-25 | 1977-09-16 | Valentin Camille | |
DE2501934C2 (de) * | 1974-01-25 | 1982-11-11 | Hughes Aircraft Co., Culver City, Calif. | Verfahren zum Betrieb eines ladungsgekoppelten Halbleiter-Bauelementes und ladungsgekoppeltes Halbleiter-Bauelement zur Durchführung dieses Verfahrens |
US3937985A (en) * | 1974-06-05 | 1976-02-10 | Bell Telephone Laboratories, Incorporated | Apparatus and method for regenerating charge |
US3967136A (en) * | 1974-06-07 | 1976-06-29 | Bell Telephone Laboratories, Incorporated | Input circuit for semiconductor charge transfer device circulating memory apparatus |
US3946421A (en) * | 1974-06-28 | 1976-03-23 | Texas Instruments Incorporated | Multi phase double level metal charge coupled device |
US3943543A (en) * | 1974-07-26 | 1976-03-09 | Texas Instruments Incorporated | Three level electrode configuration for three phase charge coupled device |
US3955101A (en) * | 1974-07-29 | 1976-05-04 | Fairchild Camera And Instrument Coporation | Dynamic reference voltage generator |
US4035821A (en) * | 1974-07-29 | 1977-07-12 | Fairchild Camera And Instrument Corporation | Device for introducing charge |
US4010484A (en) * | 1974-08-16 | 1977-03-01 | Bell Telephone Laboratories, Incorporated | Charge injection input network for semiconductor charge transfer device |
US4005455A (en) * | 1974-08-21 | 1977-01-25 | Intel Corporation | Corrosive resistant semiconductor interconnect pad |
US4060737A (en) * | 1974-08-22 | 1977-11-29 | Texas Instruments Incorporated | Charge coupled device shift registers having an improved regenerative charge detector |
US3979603A (en) * | 1974-08-22 | 1976-09-07 | Texas Instruments Incorporated | Regenerative charge detector for charged coupled devices |
AT376845B (de) * | 1974-09-20 | 1985-01-10 | Siemens Ag | Speicher-feldeffekttransistor |
US4031315A (en) * | 1974-09-27 | 1977-06-21 | Siemens Aktiengesellschaft | Solid body image sensor having charge coupled semiconductor charge shift elements and method of operation |
US3999152A (en) * | 1974-10-21 | 1976-12-21 | Hughes Aircraft Company | CCD selective transversal filter |
US3965368A (en) * | 1974-10-24 | 1976-06-22 | Texas Instruments Incorporated | Technique for reduction of electrical input noise in charge coupled devices |
US4148132A (en) * | 1974-11-27 | 1979-04-10 | Trw Inc. | Method of fabricating a two-phase charge coupled device |
US3944990A (en) * | 1974-12-06 | 1976-03-16 | Intel Corporation | Semiconductor memory employing charge-coupled shift registers with multiplexed refresh amplifiers |
US4007381A (en) * | 1975-04-18 | 1977-02-08 | Bell Telephone Laboratories, Incorporated | Balanced regenerative charge detection circuit for semiconductor charge transfer devices |
US3986059A (en) * | 1975-04-18 | 1976-10-12 | Bell Telephone Laboratories, Incorporated | Electrically pulsed charge regenerator for semiconductor charge coupled devices |
US3983413A (en) * | 1975-05-02 | 1976-09-28 | Fairchild Camera And Instrument Corporation | Balanced differential capacitively decoupled charge sensor |
US4063992A (en) * | 1975-05-27 | 1977-12-20 | Fairchild Camera And Instrument Corporation | Edge etch method for producing narrow openings to the surface of materials |
DE2523683C2 (de) * | 1975-05-28 | 1985-03-07 | Siemens AG, 1000 Berlin und 8000 München | Integrierte Schaltung mit einer Leitung zum Transport von Ladungen zwischen Speicherelementen eines Halbleiterspeichers und einer Schreib-Lese-Schaltung |
US4195238A (en) * | 1975-06-04 | 1980-03-25 | Hitachi, Ltd. | Address buffer circuit in semiconductor memory |
US4021682A (en) * | 1975-06-30 | 1977-05-03 | Honeywell Information Systems, Inc. | Charge detectors for CCD registers |
US3980902A (en) * | 1975-06-30 | 1976-09-14 | Honeywell Information Systems, Inc. | Charge injectors for CCD registers |
DE2630085C3 (de) * | 1975-07-21 | 1978-07-13 | Hughes Aircraft Co., Culver City, Calif. (V.St.A.) | CCD-Transversalfilter |
GB1518953A (en) * | 1975-09-05 | 1978-07-26 | Mullard Ltd | Charge coupled dircuit arrangements and devices |
DE2541662A1 (de) * | 1975-09-18 | 1977-03-24 | Siemens Ag | Regenerierschaltung fuer ladungsverschiebeanordnungen |
DE2541721A1 (de) * | 1975-09-18 | 1977-03-24 | Siemens Ag | Digitaler differenzverstaerker fuer ccd-anordnungen |
DE2541686A1 (de) * | 1975-09-18 | 1977-03-24 | Siemens Ag | Regenerierschaltung fuer ladungsgekoppelte elemente |
US4072978A (en) * | 1975-09-29 | 1978-02-07 | Texas Instruments Incorporated | CCD input and node preset method |
DE2543615A1 (de) * | 1975-09-30 | 1977-04-07 | Siemens Ag | Regenerierstufe fuer ladungsverschiebeanordnungen |
US4047051A (en) * | 1975-10-24 | 1977-09-06 | International Business Machines Corporation | Method and apparatus for replicating a charge packet |
US3987475A (en) * | 1975-11-10 | 1976-10-19 | Northern Electric Company Limited | Nondestructive charge sensing in a charge coupled device |
JPS5275134A (en) * | 1975-12-19 | 1977-06-23 | Hitachi Ltd | Electric charge transfer device |
US4156818A (en) * | 1975-12-23 | 1979-05-29 | International Business Machines Corporation | Operating circuitry for semiconductor charge coupled devices |
US4090095A (en) * | 1976-02-17 | 1978-05-16 | Rca Corporation | Charge coupled device with diode reset for floating gate output |
US4040077A (en) * | 1976-08-18 | 1977-08-02 | Honeywell Information Systems, Inc. | Time-independent ccd charge amplifier |
US4091278A (en) * | 1976-08-18 | 1978-05-23 | Honeywell Information Systems Inc. | Time-independent circuit for multiplying and adding charge |
CA1105139A (en) * | 1976-12-08 | 1981-07-14 | Ronald E. Crochiere | Charge transfer device having linear differential charge-splitting input |
DE2713876C2 (de) * | 1977-03-29 | 1983-09-22 | Siemens AG, 1000 Berlin und 8000 München | Ladungsgekoppeltes Element (CCD) |
US4206446A (en) * | 1977-05-23 | 1980-06-03 | Rca Corporation | CCD A-to-D converter |
US4139784A (en) * | 1977-08-02 | 1979-02-13 | Rca Corporation | CCD Input circuits |
USRE31612E (en) * | 1977-08-02 | 1984-06-26 | Rca Corporation | CCD Input circuits |
US4130894A (en) * | 1977-11-21 | 1978-12-19 | International Business Machines Corporation | Loop organized serial-parallel-serial memory storage system |
US4140923A (en) * | 1977-11-25 | 1979-02-20 | Rca Corporation | Charge transfer output circuits |
US4152781A (en) * | 1978-06-30 | 1979-05-01 | International Business Machines Corporation | Multiplexed and interlaced charge-coupled serial-parallel-serial memory device |
US4165539A (en) * | 1978-06-30 | 1979-08-21 | International Business Machines Corporation | Bidirectional serial-parallel-serial charge-coupled device |
US4246496A (en) * | 1978-07-17 | 1981-01-20 | International Business Machines Corporation | Voltage-to-charge transducer |
US4185324A (en) * | 1978-08-03 | 1980-01-22 | Ncr Corporation | Data storage system |
FR2436468A1 (fr) * | 1978-09-15 | 1980-04-11 | Thomson Csf | Element de memoire dynamique a transfert de charges, et application notamment a un registre a decalage |
US4228526A (en) * | 1978-12-29 | 1980-10-14 | International Business Machines Corporation | Line-addressable serial-parallel-serial array |
US4412343A (en) * | 1979-02-28 | 1983-10-25 | Rca Corporation | Charge transfer circuits with dark current compensation |
US4309624A (en) * | 1979-07-03 | 1982-01-05 | Texas Instruments Incorporated | Floating gate amplifier method of operation for noise minimization in charge coupled devices |
US4538287A (en) * | 1979-06-04 | 1985-08-27 | Texas Instruments Incorporated | Floating gate amplifier using conductive coupling for charge coupled devices |
JPS58103172A (ja) * | 1981-12-16 | 1983-06-20 | Nec Corp | 電荷転送装置 |
US4521896A (en) * | 1982-05-14 | 1985-06-04 | Westinghouse Electric Co. | Simultaneous sampling dual transfer channel charge coupled device |
NL8203870A (nl) * | 1982-10-06 | 1984-05-01 | Philips Nv | Halfgeleiderinrichting. |
US4562363A (en) * | 1982-11-29 | 1985-12-31 | Tektronix, Inc. | Method for using a charge coupled device as a peak detector |
NL8300366A (nl) * | 1983-02-01 | 1984-09-03 | Philips Nv | Beeldopneeminrichting. |
US4688066A (en) * | 1984-08-31 | 1987-08-18 | Rca Corporation | Opposite direction multiple-phase clocking in adjacent CCD shift registers |
US4812668A (en) * | 1986-04-17 | 1989-03-14 | Honeywell Inc. | Multiplexer elements for photovoltaic detectors |
US5065203A (en) * | 1988-07-07 | 1991-11-12 | Tektronix, Inc. | Trench structured charge-coupled device |
US4992842A (en) * | 1988-07-07 | 1991-02-12 | Tektronix, Inc. | Charge-coupled device channel with countinously graded built-in potential |
US5298771A (en) * | 1992-11-09 | 1994-03-29 | Xerox Corporation | Color imaging charge-coupled array with photosensitive layers in potential wells |
JP3747845B2 (ja) * | 2000-12-25 | 2006-02-22 | ソニー株式会社 | 固体撮像素子の駆動方法 |
US6914291B2 (en) * | 2002-11-18 | 2005-07-05 | Ching-Yuan Wu | Self-aligned floating-gate structure for flash memory device |
US6943614B1 (en) * | 2004-01-29 | 2005-09-13 | Transmeta Corporation | Fractional biasing of semiconductors |
JP4639116B2 (ja) * | 2005-06-27 | 2011-02-23 | 富士フイルム株式会社 | Ccd型固体撮像装置の製造方法 |
KR20110042188A (ko) * | 2008-10-24 | 2011-04-25 | 가부시키가이샤 어드밴티스트 | 전자 디바이스 및 제조 방법 |
US8698061B2 (en) * | 2009-12-10 | 2014-04-15 | Luxima Technology LLC | Image sensors, methods, and pixels with storage and transfer gates |
US8723093B2 (en) | 2011-01-10 | 2014-05-13 | Alexander Krymski | Image sensors and methods with shared control lines |
US8780628B2 (en) * | 2011-09-23 | 2014-07-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit including a voltage divider and methods of operating the same |
US9369648B2 (en) | 2013-06-18 | 2016-06-14 | Alexander Krymski | Image sensors, methods, and pixels with tri-level biased transfer gates |
JP7242285B2 (ja) * | 2018-12-19 | 2023-03-20 | キオクシア株式会社 | 半導体装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3660697A (en) * | 1970-02-16 | 1972-05-02 | Bell Telephone Labor Inc | Monolithic semiconductor apparatus adapted for sequential charge transfer |
US3651349A (en) * | 1970-02-16 | 1972-03-21 | Bell Telephone Labor Inc | Monolithic semiconductor apparatus adapted for sequential charge transfer |
-
1972
- 1972-01-04 AU AU37578/72A patent/AU461729B2/en not_active Expired
- 1972-01-05 GB GB2004174A patent/GB1377124A/en not_active Expired
- 1972-01-05 GB GB38772A patent/GB1377121A/en not_active Expired
- 1972-01-05 GB GB2003974A patent/GB1377122A/en not_active Expired
- 1972-01-05 GB GB2004074A patent/GB1377123A/en not_active Expired
- 1972-01-05 GB GB2004274A patent/GB1377125A/en not_active Expired
- 1972-01-05 GB GB2004374A patent/GB1377126A/en not_active Expired
- 1972-01-05 GB GB2875774A patent/GB1377128A/en not_active Expired
- 1972-01-05 GB GB2875874A patent/GB1377129A/en not_active Expired
- 1972-01-05 GB GB2004474A patent/GB1377127A/en not_active Expired
- 1972-01-11 DE DE2201150A patent/DE2201150C3/de not_active Expired
- 1972-01-13 NL NLAANVRAGE7200519,A patent/NL182520C/xx not_active IP Right Cessation
- 1972-01-14 FR FR7201340A patent/FR2121870B1/fr not_active Expired
- 1972-01-31 US US00222238A patent/US3758794A/en not_active Expired - Lifetime
- 1972-01-31 US US00222237A patent/US3760202A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
GB1377127A (en) | 1974-12-11 |
GB1377121A (en) | 1974-12-11 |
DE2201150B2 (de) | 1979-04-12 |
DE2201150A1 (de) | 1972-08-10 |
GB1377128A (en) | 1974-12-11 |
FR2121870A1 (de) | 1972-08-25 |
DE2201150C3 (de) | 1979-12-06 |
GB1377125A (en) | 1974-12-11 |
AU461729B2 (en) | 1975-06-05 |
AU3757872A (en) | 1973-07-05 |
NL182520B (nl) | 1987-10-16 |
GB1377126A (en) | 1974-12-11 |
GB1377123A (en) | 1974-12-11 |
FR2121870B1 (de) | 1977-09-02 |
GB1377129A (en) | 1974-12-11 |
GB1377122A (en) | 1974-12-11 |
US3758794A (en) | 1973-09-11 |
NL7200519A (de) | 1972-07-18 |
GB1377124A (en) | 1974-12-11 |
US3760202A (en) | 1973-09-18 |
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