NL182520C - Halfgeleiderinrichting van het ladinggekoppelde type voor het opslaan en in volgorde overdragen van pakketten ladingdragers. - Google Patents

Halfgeleiderinrichting van het ladinggekoppelde type voor het opslaan en in volgorde overdragen van pakketten ladingdragers.

Info

Publication number
NL182520C
NL182520C NLAANVRAGE7200519,A NL7200519A NL182520C NL 182520 C NL182520 C NL 182520C NL 7200519 A NL7200519 A NL 7200519A NL 182520 C NL182520 C NL 182520C
Authority
NL
Netherlands
Prior art keywords
packages
storing
load
semiconductor device
order transfer
Prior art date
Application number
NLAANVRAGE7200519,A
Other languages
English (en)
Other versions
NL182520B (nl
NL7200519A (nl
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of NL7200519A publication Critical patent/NL7200519A/xx
Publication of NL182520B publication Critical patent/NL182520B/nl
Application granted granted Critical
Publication of NL182520C publication Critical patent/NL182520C/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76825—Structures for regeneration, refreshing, leakage compensation or the like
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/287—Organisation of a multiplicity of shift registers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76808—Input structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
NLAANVRAGE7200519,A 1971-01-14 1972-01-13 Halfgeleiderinrichting van het ladinggekoppelde type voor het opslaan en in volgorde overdragen van pakketten ladingdragers. NL182520C (nl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10638171A 1971-01-14 1971-01-14
US22223772A 1972-01-31 1972-01-31
US22223872A 1972-01-31 1972-01-31

Publications (3)

Publication Number Publication Date
NL7200519A NL7200519A (nl) 1972-07-18
NL182520B NL182520B (nl) 1987-10-16
NL182520C true NL182520C (nl) 1988-03-16

Family

ID=27380105

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7200519,A NL182520C (nl) 1971-01-14 1972-01-13 Halfgeleiderinrichting van het ladinggekoppelde type voor het opslaan en in volgorde overdragen van pakketten ladingdragers.

Country Status (6)

Country Link
US (2) US3758794A (nl)
AU (1) AU461729B2 (nl)
DE (1) DE2201150C3 (nl)
FR (1) FR2121870B1 (nl)
GB (9) GB1377124A (nl)
NL (1) NL182520C (nl)

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US3876989A (en) * 1973-06-18 1975-04-08 Ibm Ccd optical sensor storage device having continuous light exposure compensation
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US3967306A (en) * 1973-08-01 1976-06-29 Trw Inc. Asymmetrical well charge coupled device
US3906359A (en) * 1973-08-06 1975-09-16 Westinghouse Electric Corp Magnetic field sensing CCD device with a slower output sampling rate than the transfer rate yielding an integration
US3881117A (en) * 1973-09-10 1975-04-29 Bell Telephone Labor Inc Input circuit for semiconductor charge transfer devices
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DE2348490C3 (de) * 1973-09-26 1979-07-26 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Betreiben eines Ladungsverschiebespeichers
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US4005455A (en) * 1974-08-21 1977-01-25 Intel Corporation Corrosive resistant semiconductor interconnect pad
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US3979603A (en) * 1974-08-22 1976-09-07 Texas Instruments Incorporated Regenerative charge detector for charged coupled devices
AT376845B (de) * 1974-09-20 1985-01-10 Siemens Ag Speicher-feldeffekttransistor
US4031315A (en) * 1974-09-27 1977-06-21 Siemens Aktiengesellschaft Solid body image sensor having charge coupled semiconductor charge shift elements and method of operation
US3999152A (en) * 1974-10-21 1976-12-21 Hughes Aircraft Company CCD selective transversal filter
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US4148132A (en) * 1974-11-27 1979-04-10 Trw Inc. Method of fabricating a two-phase charge coupled device
US3944990A (en) * 1974-12-06 1976-03-16 Intel Corporation Semiconductor memory employing charge-coupled shift registers with multiplexed refresh amplifiers
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US3986059A (en) * 1975-04-18 1976-10-12 Bell Telephone Laboratories, Incorporated Electrically pulsed charge regenerator for semiconductor charge coupled devices
US3983413A (en) * 1975-05-02 1976-09-28 Fairchild Camera And Instrument Corporation Balanced differential capacitively decoupled charge sensor
US4063992A (en) * 1975-05-27 1977-12-20 Fairchild Camera And Instrument Corporation Edge etch method for producing narrow openings to the surface of materials
DE2523683C2 (de) * 1975-05-28 1985-03-07 Siemens AG, 1000 Berlin und 8000 München Integrierte Schaltung mit einer Leitung zum Transport von Ladungen zwischen Speicherelementen eines Halbleiterspeichers und einer Schreib-Lese-Schaltung
US4195238A (en) * 1975-06-04 1980-03-25 Hitachi, Ltd. Address buffer circuit in semiconductor memory
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US4072978A (en) * 1975-09-29 1978-02-07 Texas Instruments Incorporated CCD input and node preset method
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US4040077A (en) * 1976-08-18 1977-08-02 Honeywell Information Systems, Inc. Time-independent ccd charge amplifier
US4091278A (en) * 1976-08-18 1978-05-23 Honeywell Information Systems Inc. Time-independent circuit for multiplying and adding charge
CA1105139A (en) * 1976-12-08 1981-07-14 Ronald E. Crochiere Charge transfer device having linear differential charge-splitting input
DE2713876C2 (de) * 1977-03-29 1983-09-22 Siemens AG, 1000 Berlin und 8000 München Ladungsgekoppeltes Element (CCD)
US4206446A (en) * 1977-05-23 1980-06-03 Rca Corporation CCD A-to-D converter
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US4309624A (en) * 1979-07-03 1982-01-05 Texas Instruments Incorporated Floating gate amplifier method of operation for noise minimization in charge coupled devices
US4538287A (en) * 1979-06-04 1985-08-27 Texas Instruments Incorporated Floating gate amplifier using conductive coupling for charge coupled devices
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JP3747845B2 (ja) * 2000-12-25 2006-02-22 ソニー株式会社 固体撮像素子の駆動方法
US6914291B2 (en) * 2002-11-18 2005-07-05 Ching-Yuan Wu Self-aligned floating-gate structure for flash memory device
US6943614B1 (en) * 2004-01-29 2005-09-13 Transmeta Corporation Fractional biasing of semiconductors
JP4639116B2 (ja) * 2005-06-27 2011-02-23 富士フイルム株式会社 Ｃｃｄ型固体撮像装置の製造方法
KR20110042188A (ko) * 2008-10-24 2011-04-25 가부시키가이샤 어드밴티스트 전자 디바이스 및 제조 방법
US8698061B2 (en) * 2009-12-10 2014-04-15 Luxima Technology LLC Image sensors, methods, and pixels with storage and transfer gates
US8723093B2 (en) 2011-01-10 2014-05-13 Alexander Krymski Image sensors and methods with shared control lines
US8780628B2 (en) * 2011-09-23 2014-07-15 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit including a voltage divider and methods of operating the same
US9369648B2 (en) 2013-06-18 2016-06-14 Alexander Krymski Image sensors, methods, and pixels with tri-level biased transfer gates
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US3660697A (en) * 1970-02-16 1972-05-02 Bell Telephone Labor Inc Monolithic semiconductor apparatus adapted for sequential charge transfer
US3651349A (en) * 1970-02-16 1972-03-21 Bell Telephone Labor Inc Monolithic semiconductor apparatus adapted for sequential charge transfer

Also Published As

Publication number Publication date
GB1377127A (en) 1974-12-11
GB1377121A (en) 1974-12-11
DE2201150B2 (nl) 1979-04-12
DE2201150A1 (de) 1972-08-10
GB1377128A (en) 1974-12-11
FR2121870A1 (nl) 1972-08-25
DE2201150C3 (de) 1979-12-06
GB1377125A (en) 1974-12-11
AU461729B2 (en) 1975-06-05
AU3757872A (en) 1973-07-05
NL182520B (nl) 1987-10-16
GB1377126A (en) 1974-12-11
GB1377123A (en) 1974-12-11
FR2121870B1 (nl) 1977-09-02
GB1377129A (en) 1974-12-11
GB1377122A (en) 1974-12-11
US3758794A (en) 1973-09-11
NL7200519A (nl) 1972-07-18
GB1377124A (en) 1974-12-11
US3760202A (en) 1973-09-18

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Legal Events

Date Code Title Description
BB A search report has been drawn up
BC A request for examination has been filed
A85 Still pending on 85-01-01
V4 Discontinued because of reaching the maximum lifetime of a patent