NL178925C - Halfgeleiderschakeling van het ladinggekoppelde type voor het opslaan en in volgorde overdragen van pakketten ladingsdragers. - Google Patents
Halfgeleiderschakeling van het ladinggekoppelde type voor het opslaan en in volgorde overdragen van pakketten ladingsdragers.Info
- Publication number
- NL178925C NL178925C NLAANVRAGE7704168,A NL7704168A NL178925C NL 178925 C NL178925 C NL 178925C NL 7704168 A NL7704168 A NL 7704168A NL 178925 C NL178925 C NL 178925C
- Authority
- NL
- Netherlands
- Prior art keywords
- packages
- semi
- storing
- load
- conductor circuit
- Prior art date
Links
- 239000000969 carrier Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
- H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1062—Channel region of field-effect devices of charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51043371A JPS5814749B2 (ja) | 1976-04-15 | 1976-04-15 | 電荷転送装置 |
JP4688276A JPS52130293A (en) | 1976-04-24 | 1976-04-24 | Charge transfer device |
Publications (3)
Publication Number | Publication Date |
---|---|
NL7704168A NL7704168A (nl) | 1977-10-18 |
NL178925B NL178925B (nl) | 1986-01-02 |
NL178925C true NL178925C (nl) | 1986-06-02 |
Family
ID=26383127
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NLAANVRAGE7704168,A NL178925C (nl) | 1976-04-15 | 1977-04-15 | Halfgeleiderschakeling van het ladinggekoppelde type voor het opslaan en in volgorde overdragen van pakketten ladingsdragers. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4574295A (nl) |
CA (1) | CA1101993A (nl) |
DE (1) | DE2716754C2 (nl) |
GB (1) | GB1564263A (nl) |
NL (1) | NL178925C (nl) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2646301C3 (de) * | 1975-10-31 | 1981-01-15 | Fujitsu Ltd., Kawasaki, Kanagawa (Japan) | Ladungsgekoppeltes Halbleiterbauelement |
US4371885A (en) * | 1979-10-10 | 1983-02-01 | Hughes Aircraft Company | Charge coupled device improved meander channel serial register |
US4709381A (en) * | 1986-03-19 | 1987-11-24 | Westinghouse Electric Corp. | CCD focal plane array convolver |
US5192990A (en) * | 1986-09-18 | 1993-03-09 | Eastman Kodak Company | Output circuit for image sensor |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3858232A (en) * | 1970-02-16 | 1974-12-31 | Bell Telephone Labor Inc | Information storage devices |
US3700932A (en) * | 1970-02-16 | 1972-10-24 | Bell Telephone Labor Inc | Charge coupled devices |
US3921194A (en) * | 1970-07-20 | 1975-11-18 | Gen Electric | Method and apparatus for storing and transferring information |
NL165869C (nl) * | 1970-09-25 | 1981-05-15 | Philips Nv | Analoog schuifregister. |
US3796927A (en) * | 1970-12-16 | 1974-03-12 | Bell Telephone Labor Inc | Three dimensional charge coupled devices |
NL7409793A (nl) * | 1973-08-01 | 1975-02-04 | Trw Inc | Asymmetrische ladingsoverdrachtsinrichting. |
CA1023050A (en) * | 1974-05-16 | 1977-12-20 | Western Electric Company, Incorporated | Charge transfer delay line filters |
US3942163A (en) * | 1974-06-21 | 1976-03-02 | Burroughs Corporation | CCD stack memory organization |
-
1977
- 1977-04-14 CA CA276,153A patent/CA1101993A/en not_active Expired
- 1977-04-15 GB GB15843/77A patent/GB1564263A/en not_active Expired
- 1977-04-15 NL NLAANVRAGE7704168,A patent/NL178925C/nl not_active IP Right Cessation
- 1977-04-15 DE DE2716754A patent/DE2716754C2/de not_active Expired
-
1984
- 1984-11-29 US US06/676,775 patent/US4574295A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE2716754A1 (de) | 1977-10-20 |
CA1101993A (en) | 1981-05-26 |
NL7704168A (nl) | 1977-10-18 |
US4574295A (en) | 1986-03-04 |
DE2716754C2 (de) | 1986-05-15 |
GB1564263A (en) | 1980-04-02 |
NL178925B (nl) | 1986-01-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A85 | Still pending on 85-01-01 | ||
V1 | Lapsed because of non-payment of the annual fee |
Effective date: 19961101 |