NL7212509A - - Google Patents
Info
- Publication number
- NL7212509A NL7212509A NL7212509A NL7212509A NL7212509A NL 7212509 A NL7212509 A NL 7212509A NL 7212509 A NL7212509 A NL 7212509A NL 7212509 A NL7212509 A NL 7212509A NL 7212509 A NL7212509 A NL 7212509A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
- H01L27/0222—Charge pumping, substrate bias generation structures
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/205—Substrate bias-voltage generators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Automation & Control Theory (AREA)
- Radar, Positioning & Navigation (AREA)
- Nonlinear Science (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Memories (AREA)
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7212509A NL7212509A (de) | 1972-09-15 | 1972-09-15 | |
| DE2341899A DE2341899C3 (de) | 1972-09-15 | 1973-08-18 | Integrierte Halbleiterschaltung und Verfahren zu ihrem Betrieb |
| AU60214/73A AU465865B2 (en) | 1972-09-15 | 1973-09-11 | Semiconductor device |
| JP48102290A JPS5244715B2 (de) | 1972-09-15 | 1973-09-12 | |
| CA180,885A CA993571A (en) | 1972-09-15 | 1973-09-12 | Semiconductor device |
| IT69705/73A IT996680B (it) | 1972-09-15 | 1973-09-12 | Dispositivo semiconduttore |
| FR7332776A FR2200634B1 (de) | 1972-09-15 | 1973-09-12 | |
| GB4278373A GB1450167A (en) | 1972-09-15 | 1973-09-12 | Integrated citcuits |
| US05/552,294 US4255677A (en) | 1972-09-15 | 1975-02-24 | Charge pump substrate bias generator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7212509A NL7212509A (de) | 1972-09-15 | 1972-09-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7212509A true NL7212509A (de) | 1974-03-19 |
Family
ID=19816940
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7212509A NL7212509A (de) | 1972-09-15 | 1972-09-15 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US4255677A (de) |
| JP (1) | JPS5244715B2 (de) |
| AU (1) | AU465865B2 (de) |
| CA (1) | CA993571A (de) |
| DE (1) | DE2341899C3 (de) |
| FR (1) | FR2200634B1 (de) |
| GB (1) | GB1450167A (de) |
| IT (1) | IT996680B (de) |
| NL (1) | NL7212509A (de) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2620973A1 (de) * | 1975-06-30 | 1977-01-27 | Ibm | Halbleiterschaltungsanordnung zur fet-substratvorspannungserzeugung |
| DE2839073C2 (de) * | 1978-09-07 | 1983-02-17 | Siemens AG, 1000 Berlin und 8000 München | Dynamische Stromquelle für Halbleiterbausteine und ihre Verwendung |
| JPS55162257A (en) * | 1979-06-05 | 1980-12-17 | Fujitsu Ltd | Semiconductor element having substrate bias generator circuit |
| JPS6038028B2 (ja) * | 1979-07-23 | 1985-08-29 | 三菱電機株式会社 | 基板電位発生装置 |
| JPS5619676A (en) * | 1979-07-26 | 1981-02-24 | Fujitsu Ltd | Semiconductor device |
| EP0030856B1 (de) * | 1979-12-13 | 1984-03-21 | Fujitsu Limited | Ladungspumpende Halbleiterspeicherzelle mit Ladungsspeicherzone und Speicheranordnung mit einer solchen Zelle |
| JPS5771222U (de) * | 1980-10-16 | 1982-04-30 | ||
| US4559548A (en) * | 1981-04-07 | 1985-12-17 | Tokyo Shibaura Denki Kabushiki Kaisha | CMOS Charge pump free of parasitic injection |
| JPS58122766A (ja) * | 1982-01-14 | 1983-07-21 | Toshiba Corp | 半導体装置 |
| US4704625A (en) * | 1982-08-05 | 1987-11-03 | Motorola, Inc. | Capacitor with reduced voltage variability |
| US4670669A (en) * | 1984-08-13 | 1987-06-02 | International Business Machines Corporation | Charge pumping structure for a substrate bias generator |
| DE3685169D1 (de) * | 1985-08-26 | 1992-06-11 | Siemens Ag | Integrierte schaltung in komplementaerer schaltungstechnik mit einem substratvorspannungs-generator und einer schottky-diode. |
| US5286986A (en) * | 1989-04-13 | 1994-02-15 | Kabushiki Kaisha Toshiba | Semiconductor device having CCD and its peripheral bipolar transistors |
| JPH07105458B2 (ja) * | 1989-11-21 | 1995-11-13 | 株式会社東芝 | 複合型集積回路素子 |
| JP2968836B2 (ja) * | 1990-11-30 | 1999-11-02 | 日本テキサス・インスツルメンツ株式会社 | 半導体基板電位発生回路 |
| US5364801A (en) * | 1990-12-17 | 1994-11-15 | Texas Instruments Incorporated | Method of forming a charge pump circuit |
| US6825878B1 (en) | 1998-12-08 | 2004-11-30 | Micron Technology, Inc. | Twin P-well CMOS imager |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3816769A (en) * | 1969-12-17 | 1974-06-11 | Integrated Photomatrix Ltd | Method and circuit element for the selective charging of a semiconductor diffusion region |
| US3673428A (en) * | 1970-09-18 | 1972-06-27 | Rca Corp | Input transient protection for complementary insulated gate field effect transistor integrated circuit device |
| AU461729B2 (en) * | 1971-01-14 | 1975-06-05 | Rca Corporation | Charge coupled circuits |
| BE789501A (fr) * | 1971-09-30 | 1973-03-29 | Siemens Ag | Condensateur electrique dans un circuit integre, utilise notamment comme memoire pour une memoire a semiconducteur |
-
1972
- 1972-09-15 NL NL7212509A patent/NL7212509A/xx unknown
-
1973
- 1973-08-18 DE DE2341899A patent/DE2341899C3/de not_active Expired
- 1973-09-11 AU AU60214/73A patent/AU465865B2/en not_active Expired
- 1973-09-12 CA CA180,885A patent/CA993571A/en not_active Expired
- 1973-09-12 FR FR7332776A patent/FR2200634B1/fr not_active Expired
- 1973-09-12 GB GB4278373A patent/GB1450167A/en not_active Expired
- 1973-09-12 JP JP48102290A patent/JPS5244715B2/ja not_active Expired
- 1973-09-12 IT IT69705/73A patent/IT996680B/it active
-
1975
- 1975-02-24 US US05/552,294 patent/US4255677A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| FR2200634B1 (de) | 1978-01-06 |
| DE2341899B2 (de) | 1979-02-08 |
| DE2341899C3 (de) | 1979-10-04 |
| CA993571A (en) | 1976-07-20 |
| FR2200634A1 (de) | 1974-04-19 |
| DE2341899A1 (de) | 1974-03-21 |
| JPS4969273A (de) | 1974-07-04 |
| GB1450167A (en) | 1976-09-22 |
| US4255677A (en) | 1981-03-10 |
| JPS5244715B2 (de) | 1977-11-10 |
| IT996680B (it) | 1975-12-10 |
| AU465865B2 (en) | 1975-10-09 |
| AU6021473A (en) | 1975-03-13 |