NL172705C - Halfgeleidergeheugeninrichting voor het opslaan en in volgorde overdragen van pakketten minderheidsladingsdragers. - Google Patents

Halfgeleidergeheugeninrichting voor het opslaan en in volgorde overdragen van pakketten minderheidsladingsdragers.

Info

Publication number
NL172705C
NL172705C NLAANVRAGE7500888,A NL7500888A NL172705C NL 172705 C NL172705 C NL 172705C NL 7500888 A NL7500888 A NL 7500888A NL 172705 C NL172705 C NL 172705C
Authority
NL
Netherlands
Prior art keywords
packages
storing
memory device
semiconductor memory
minority carriers
Prior art date
Application number
NLAANVRAGE7500888,A
Other languages
English (en)
Dutch (nl)
Other versions
NL7500888A (nl
NL172705B (nl
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of NL7500888A publication Critical patent/NL7500888A/xx
Publication of NL172705B publication Critical patent/NL172705B/xx
Application granted granted Critical
Publication of NL172705C publication Critical patent/NL172705C/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76808—Input structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14875—Infrared CCD or CID imagers
    • H01L27/14881—Infrared CCD or CID imagers of the hybrid type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
NLAANVRAGE7500888,A 1974-01-25 1975-01-24 Halfgeleidergeheugeninrichting voor het opslaan en in volgorde overdragen van pakketten minderheidsladingsdragers. NL172705C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US43658774A 1974-01-25 1974-01-25

Publications (3)

Publication Number Publication Date
NL7500888A NL7500888A (nl) 1975-07-29
NL172705B NL172705B (nl) 1983-05-02
NL172705C true NL172705C (nl) 1983-10-03

Family

ID=23733026

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7500888,A NL172705C (nl) 1974-01-25 1975-01-24 Halfgeleidergeheugeninrichting voor het opslaan en in volgorde overdragen van pakketten minderheidsladingsdragers.

Country Status (5)

Country Link
US (1) US4093872A (de)
JP (1) JPS5238398B2 (de)
DE (1) DE2501934C2 (de)
GB (1) GB1496081A (de)
NL (1) NL172705C (de)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL180157C (nl) * 1975-06-09 1987-01-02 Philips Nv Halfgeleider beeldopneeminrichting.
JPS528788A (en) * 1975-07-10 1977-01-22 Nec Corp Charge transfer exposer
US4360791A (en) * 1977-01-10 1982-11-23 Texas Instruments Incorporated Frequency converting filter
DE2721039C2 (de) * 1977-05-10 1986-10-23 Siemens AG, 1000 Berlin und 8000 München Digitale Ladungsverschiebeanordnung
US4197469A (en) * 1978-05-25 1980-04-08 Rockwell International Corporation Capacitively coupled array of photodetectors
US4276099A (en) * 1978-10-11 1981-06-30 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Fabrication of infra-red charge coupled devices
JPS56103479A (en) * 1980-01-21 1981-08-18 Fujitsu Ltd Electric charge transferring device
JPS56104582A (en) * 1980-01-25 1981-08-20 Toshiba Corp Solid image pickup device
US4321614A (en) * 1980-03-12 1982-03-23 Westinghouse Electric Corp. Radiant energy sensor with blooming control
JPS56164682A (en) * 1980-05-22 1981-12-17 Matsushita Electronics Corp Solidstate image pick-up device
US4409483A (en) * 1980-10-07 1983-10-11 Westinghouse Electric Corp. Radiant energy differential sensor system
IT8149780A0 (it) * 1980-12-01 1981-11-27 Hughes Aircraft Co Circuito d'ingresso a modulazionedi porta con resistori al silicio policristallino
FR2508234A1 (fr) * 1981-06-23 1982-12-24 Thomson Csf Ensemble detecteur photonique, lecteur a transfert de charges adapte et cible de prise de vues utilisant un tel ensemble
JPS58103172A (ja) * 1981-12-16 1983-06-20 Nec Corp 電荷転送装置
US4488165A (en) * 1981-12-22 1984-12-11 Levine Michael A Extrinsic infrared detector with a charge reset function
DE3200853A1 (de) * 1982-01-14 1983-07-21 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung mit einer bildaufnahmeeinheit und mit einer ausleseeinheit sowie verfahren zu ihrer herstellung
JPS58221562A (ja) * 1982-06-18 1983-12-23 Fuji Xerox Co Ltd 原稿読取装置
FR2529388B1 (fr) * 1982-06-25 1985-06-07 Thomson Csf Dispositif photosensible assurant un effet anti-eblouissement
JPS5994871A (ja) * 1982-11-22 1984-05-31 Nec Corp 電荷転送装置
JPS59132669A (ja) * 1983-01-20 1984-07-30 Sony Corp 電荷転送装置
FR2551919B1 (fr) * 1983-09-13 1986-10-10 Thomson Csf Dispositif photosensible a transfert de ligne
FR2558670B1 (fr) * 1984-01-20 1986-11-21 Thomson Csf Perfectionnement aux dispositifs photosensibles a l'etat solide
JPS61131854U (de) * 1985-02-06 1986-08-18
NL8500863A (nl) * 1985-03-25 1986-10-16 Philips Nv Ladingsoverdrachtinrichting.
US4725748A (en) * 1985-05-06 1988-02-16 Tektronix, Inc. High speed data acquisition utilizing multiple charge transfer delay lines
GB2181011B (en) * 1985-09-20 1989-09-06 Philips Electronic Associated Imaging devices comprising photodetector elements
US4896340A (en) * 1985-11-01 1990-01-23 Hughes Aircraft Company Partial direct injection for signal processing system
FR2591409B1 (fr) * 1985-12-10 1988-08-19 Telecommunications Sa Camera thermique a balayage parallele
US4812668A (en) * 1986-04-17 1989-03-14 Honeywell Inc. Multiplexer elements for photovoltaic detectors
US4951302A (en) * 1988-06-30 1990-08-21 Tektronix, Inc. Charge-coupled device shift register
JP2604905B2 (ja) * 1990-11-29 1997-04-30 宇宙開発事業団 固体撮像装置
US6366322B1 (en) 1991-04-15 2002-04-02 Lg Semicon Co., Ltd. Horizontal charge coupled device of CCD image sensor
US6021172A (en) 1994-01-28 2000-02-01 California Institute Of Technology Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter
US5471515A (en) * 1994-01-28 1995-11-28 California Institute Of Technology Active pixel sensor with intra-pixel charge transfer
US6486503B1 (en) 1994-01-28 2002-11-26 California Institute Of Technology Active pixel sensor array with electronic shuttering
DE69729648T2 (de) * 1996-01-22 2005-06-09 California Institute Of Technology, Pasadena Aktivpixelsensormatrix mit mehrfachauflösungsausgabe
US5801681A (en) * 1996-06-24 1998-09-01 Sayag; Michel Method and apparatus for generating a control signal
WO1997043607A1 (en) * 1996-05-14 1997-11-20 Michel Sayag Method and apparatus for generating a control signal
US7199409B2 (en) 2004-08-26 2007-04-03 Massachusetts Institute Of Technology Device for subtracting or adding charge in a charge-coupled device
JP2009038520A (ja) * 2007-07-31 2009-02-19 Sanyo Electric Co Ltd 撮像装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU461729B2 (en) * 1971-01-14 1975-06-05 Rca Corporation Charge coupled circuits
US3723642A (en) * 1971-05-28 1973-03-27 Hughes Aircraft Co Thermal imaging system
US3789267A (en) * 1971-06-28 1974-01-29 Bell Telephone Labor Inc Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel
US3796932A (en) * 1971-06-28 1974-03-12 Bell Telephone Labor Inc Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel
US3771149A (en) * 1971-12-30 1973-11-06 Texas Instruments Inc Charge coupled optical scanner
US3801883A (en) * 1972-06-02 1974-04-02 Gen Electric Surface charge signal correlator

Also Published As

Publication number Publication date
DE2501934C2 (de) 1982-11-11
US4093872A (en) 1978-06-06
NL7500888A (nl) 1975-07-29
JPS50105392A (de) 1975-08-20
DE2501934A1 (de) 1975-08-14
NL172705B (nl) 1983-05-02
GB1496081A (en) 1977-12-21
JPS5238398B2 (de) 1977-09-28

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee