CH517376A - Halbleitereinrichtung und Verfahren zu deren Herstellung - Google Patents

Halbleitereinrichtung und Verfahren zu deren Herstellung

Info

Publication number
CH517376A
CH517376A CH1731469A CH1731469A CH517376A CH 517376 A CH517376 A CH 517376A CH 1731469 A CH1731469 A CH 1731469A CH 1731469 A CH1731469 A CH 1731469A CH 517376 A CH517376 A CH 517376A
Authority
CH
Switzerland
Prior art keywords
manufacturing
same
semiconductor device
semiconductor
Prior art date
Application number
CH1731469A
Other languages
English (en)
Inventor
Teramoto Iwao
Nakashima Shinichi
Iwasa Hitoo
Miyai Yukio
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of CH517376A publication Critical patent/CH517376A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
    • H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
    • H01L2224/48491—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being an additional member attached to the bonding area through an adhesive or solder, e.g. buffer pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
CH1731469A 1968-11-20 1969-11-20 Halbleitereinrichtung und Verfahren zu deren Herstellung CH517376A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8570368 1968-11-20

Publications (1)

Publication Number Publication Date
CH517376A true CH517376A (de) 1971-12-31

Family

ID=13866166

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1731469A CH517376A (de) 1968-11-20 1969-11-20 Halbleitereinrichtung und Verfahren zu deren Herstellung

Country Status (9)

Country Link
US (1) US3740617A (de)
AT (1) AT320029B (de)
BE (1) BE741936A (de)
BR (1) BR6914217D0 (de)
CH (1) CH517376A (de)
FR (1) FR2023722A1 (de)
GB (1) GB1266398A (de)
NL (1) NL151842B (de)
SE (1) SE349188B (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2204889B1 (de) * 1972-10-27 1975-03-28 Sescosem
US3896473A (en) * 1973-12-04 1975-07-22 Bell Telephone Labor Inc Gallium arsenide schottky barrier avalance diode array
US4160992A (en) * 1977-09-14 1979-07-10 Raytheon Company Plural semiconductor devices mounted between plural heat sinks
DE2926756C2 (de) * 1979-07-03 1984-03-22 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Schottky-Dioden-Anordnung
DE2926757C2 (de) * 1979-07-03 1983-08-04 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung mit negativem differentiellen Widerstand
DE3067381D1 (en) * 1979-11-15 1984-05-10 Secr Defence Brit Series-connected combination of two-terminal semiconductor devices and their fabrication
JP2992873B2 (ja) * 1995-12-26 1999-12-20 サンケン電気株式会社 半導体装置
US5917245A (en) * 1995-12-26 1999-06-29 Mitsubishi Electric Corp. Semiconductor device with brazing mount
AU722964B2 (en) * 1997-05-30 2000-08-17 Mitsubishi Electric Corporation Semiconductor device and method for manufacture thereof
US7023892B2 (en) * 2002-01-03 2006-04-04 Arima Optoelectronics Corp. Semiconductor laser based on matrix, array or single triangle optical cavity with spatially distributed current injection
US7458763B2 (en) 2003-11-10 2008-12-02 Blueshift Technologies, Inc. Mid-entry load lock for semiconductor handling system
US20070269297A1 (en) * 2003-11-10 2007-11-22 Meulen Peter V D Semiconductor wafer handling and transport
US10086511B2 (en) 2003-11-10 2018-10-02 Brooks Automation, Inc. Semiconductor manufacturing systems
KR101570626B1 (ko) * 2006-03-05 2015-11-19 블루쉬프트 테크놀로지스, 인코포레이티드. 웨이퍼 센터 검색 방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1514304A1 (de) * 1964-04-03 1969-05-14 Philco Ford Corp Halbleiteranordnung und Herstellungsverfahren hierfuer
US3375415A (en) * 1964-07-17 1968-03-26 Motorola Inc High current rectifier
US3320497A (en) * 1964-09-11 1967-05-16 Control Data Corp Variable capacitance diode packages
US3457471A (en) * 1966-10-10 1969-07-22 Microwave Ass Semiconductor diodes of the junction type having a heat sink at the surface nearer to the junction
NL6711612A (de) * 1966-12-22 1968-06-24

Also Published As

Publication number Publication date
DE1957390B2 (de) 1972-09-07
SE349188B (de) 1972-09-18
US3740617A (en) 1973-06-19
NL151842B (nl) 1976-12-15
FR2023722A1 (de) 1970-08-21
DE1957390A1 (de) 1970-06-04
BR6914217D0 (pt) 1973-04-19
AT320029B (de) 1975-01-27
BE741936A (de) 1970-05-04
NL6917418A (de) 1970-05-22
GB1266398A (de) 1972-03-08

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Legal Events

Date Code Title Description
PL Patent ceased