CH434486A - Halbleiterschaltung und Verfahren zu deren Herstellung - Google Patents

Halbleiterschaltung und Verfahren zu deren Herstellung

Info

Publication number
CH434486A
CH434486A CH1004165A CH1004165A CH434486A CH 434486 A CH434486 A CH 434486A CH 1004165 A CH1004165 A CH 1004165A CH 1004165 A CH1004165 A CH 1004165A CH 434486 A CH434486 A CH 434486A
Authority
CH
Switzerland
Prior art keywords
manufacture
processes
semiconductor circuits
circuits
semiconductor
Prior art date
Application number
CH1004165A
Other languages
English (en)
Inventor
Griggs Currin Cedric
Struthers Jr Hood John
Original Assignee
Dow Corning
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning filed Critical Dow Corning
Publication of CH434486A publication Critical patent/CH434486A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/148—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
CH1004165A 1964-10-22 1965-07-16 Halbleiterschaltung und Verfahren zu deren Herstellung CH434486A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US405746A US3397447A (en) 1964-10-22 1964-10-22 Method of making semiconductor circuits

Publications (1)

Publication Number Publication Date
CH434486A true CH434486A (de) 1967-04-30

Family

ID=23605048

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1004165A CH434486A (de) 1964-10-22 1965-07-16 Halbleiterschaltung und Verfahren zu deren Herstellung

Country Status (5)

Country Link
US (1) US3397447A (de)
BE (1) BE671199A (de)
CH (1) CH434486A (de)
FR (1) FR1454075A (de)
NL (1) NL6513684A (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3729814A (en) * 1967-04-04 1973-05-01 Gen Electric Method for making a composite
US4445274A (en) * 1977-12-23 1984-05-01 Ngk Insulators, Ltd. Method of manufacturing a ceramic structural body
US4418470A (en) * 1981-10-21 1983-12-06 General Electric Company Method for fabricating silicon-on-sapphire monolithic microwave integrated circuits
US4525766A (en) * 1984-01-25 1985-06-25 Transensory Devices, Inc. Method and apparatus for forming hermetically sealed electrical feedthrough conductors
US4998147A (en) * 1989-07-31 1991-03-05 Motorola, Inc. Field effect attenuator devices having controlled electrical lengths
US11127652B2 (en) * 2019-10-23 2021-09-21 Raytheon Company Semiconductor structures having reduced thermally induced bow

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2978804A (en) * 1958-08-13 1961-04-11 Sylvania Electric Prod Method of classifying non-magnetic elements
NL251302A (de) * 1959-05-06
US3152939A (en) * 1960-08-12 1964-10-13 Westinghouse Electric Corp Process for preparing semiconductor members
US3158788A (en) * 1960-08-15 1964-11-24 Fairchild Camera Instr Co Solid-state circuitry having discrete regions of semi-conductor material isolated by an insulating material
US3264712A (en) * 1962-06-04 1966-08-09 Nippon Electric Co Semiconductor devices
GB1047390A (de) * 1963-05-20 1900-01-01
US3290753A (en) * 1963-08-19 1966-12-13 Bell Telephone Labor Inc Method of making semiconductor integrated circuit elements

Also Published As

Publication number Publication date
NL6513684A (de) 1966-04-25
BE671199A (de) 1966-04-21
US3397447A (en) 1968-08-20
FR1454075A (fr) 1966-07-22

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