CH442535A - Monolithische Halbleitervorrichtung und Verfahren zu deren Herstellung - Google Patents

Monolithische Halbleitervorrichtung und Verfahren zu deren Herstellung

Info

Publication number
CH442535A
CH442535A CH1504766A CH1504766A CH442535A CH 442535 A CH442535 A CH 442535A CH 1504766 A CH1504766 A CH 1504766A CH 1504766 A CH1504766 A CH 1504766A CH 442535 A CH442535 A CH 442535A
Authority
CH
Switzerland
Prior art keywords
manufacturing
same
semiconductor device
monolithic semiconductor
monolithic
Prior art date
Application number
CH1504766A
Other languages
English (en)
Inventor
Young Doo Ven
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of CH442535A publication Critical patent/CH442535A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/148—Silicon carbide
CH1504766A 1965-10-18 1966-10-18 Monolithische Halbleitervorrichtung und Verfahren zu deren Herstellung CH442535A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US497332A US3400309A (en) 1965-10-18 1965-10-18 Monolithic silicon device containing dielectrically isolatng film of silicon carbide

Publications (1)

Publication Number Publication Date
CH442535A true CH442535A (de) 1967-08-31

Family

ID=23976431

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1504766A CH442535A (de) 1965-10-18 1966-10-18 Monolithische Halbleitervorrichtung und Verfahren zu deren Herstellung

Country Status (8)

Country Link
US (1) US3400309A (de)
CA (1) CA926022A (de)
CH (1) CH442535A (de)
DE (1) DE1564191B2 (de)
FR (1) FR1497326A (de)
GB (1) GB1124853A (de)
NL (1) NL6614597A (de)
SE (1) SE339847B (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3905037A (en) * 1966-12-30 1975-09-09 Texas Instruments Inc Integrated circuit components in insulated islands of integrated semiconductor materials in a single substrate
US3497773A (en) * 1967-02-20 1970-02-24 Westinghouse Electric Corp Passive circuit elements
FR1527898A (fr) * 1967-03-16 1968-06-07 Radiotechnique Coprim Rtc Agencement de dispositifs semi-conducteurs portés par un support commun et son procédé de fabrication
US3490140A (en) * 1967-10-05 1970-01-20 Bell Telephone Labor Inc Methods for making semiconductor devices
US3789276A (en) * 1968-07-15 1974-01-29 Texas Instruments Inc Multilayer microelectronic circuitry techniques
JPS557946B2 (de) * 1972-04-19 1980-02-29
JPS5226182A (en) * 1975-08-25 1977-02-26 Hitachi Ltd Manufacturing method of semi-conductor unit
FR2335046A1 (fr) * 1975-12-12 1977-07-08 Thomson Csf Procede collectif de fabrication de dispositifs semi-conducteurs a jonction et dispositifs obtenus par ce procede
JPS5272399A (en) * 1975-12-13 1977-06-16 Fujitsu Ltd Method and apparatus for growth of single crystals of al2o3 from gas p hase
DE2658304C2 (de) * 1975-12-24 1984-12-20 Tokyo Shibaura Electric Co., Ltd., Kawasaki, Kanagawa Halbleitervorrichtung
US4028149A (en) * 1976-06-30 1977-06-07 Ibm Corporation Process for forming monocrystalline silicon carbide on silicon substrates
GB1548520A (en) * 1976-08-27 1979-07-18 Tokyo Shibaura Electric Co Method of manufacturing a semiconductor device
US4161743A (en) * 1977-03-28 1979-07-17 Tokyo Shibaura Electric Co., Ltd. Semiconductor device with silicon carbide-glass-silicon carbide passivating overcoat
US4762806A (en) * 1983-12-23 1988-08-09 Sharp Kabushiki Kaisha Process for producing a SiC semiconductor device
US4524237A (en) * 1984-02-08 1985-06-18 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Increased voltage photovoltaic cell
US5229625A (en) * 1986-08-18 1993-07-20 Sharp Kabushiki Kaisha Schottky barrier gate type field effect transistor
JPH067594B2 (ja) * 1987-11-20 1994-01-26 富士通株式会社 半導体基板の製造方法
US5011706A (en) * 1989-04-12 1991-04-30 Dow Corning Corporation Method of forming coatings containing amorphous silicon carbide
US5468674A (en) * 1994-06-08 1995-11-21 The United States Of America As Represented By The Secretary Of The Navy Method for forming low and high minority carrier lifetime layers in a single semiconductor structure
US5677230A (en) * 1995-12-01 1997-10-14 Motorola Method of making wide bandgap semiconductor devices
US7060516B2 (en) * 2002-09-30 2006-06-13 Bookham Technology, Plc Method for integrating optical devices in a single epitaxial growth step
US10861694B2 (en) * 2017-01-17 2020-12-08 Zf Friedrichshafen Ag Method of manufacturing an insulation layer on silicon carbide

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2840494A (en) * 1952-12-31 1958-06-24 Henry W Parker Manufacture of transistors
NL244520A (de) * 1958-10-23
US3158788A (en) * 1960-08-15 1964-11-24 Fairchild Camera Instr Co Solid-state circuitry having discrete regions of semi-conductor material isolated by an insulating material

Also Published As

Publication number Publication date
US3400309A (en) 1968-09-03
DE1564191B2 (de) 1976-11-11
SE339847B (de) 1971-10-25
NL6614597A (de) 1967-04-19
DE1564191A1 (de) 1970-01-22
FR1497326A (fr) 1967-10-06
GB1124853A (en) 1968-08-21
CA926022A (en) 1973-05-08

Similar Documents

Publication Publication Date Title
AT259014B (de) Halbleitereinrichtung und Verfahren zu deren Herstellung
CH442535A (de) Monolithische Halbleitervorrichtung und Verfahren zu deren Herstellung
CH528152A (de) Halbleiteranordnung und Verfahren zu deren Herstellung
AT315916B (de) Halbleiterbauelement und Verfahren zu seiner Herstellung
CH535493A (de) Scheibenförmiges Halbleiterbauelement und Verfahren zu seiner Herstellung
CH504100A (de) Halbleiterbauelement und Verfahren zu dessen Herstellung
CH517359A (de) Halbleiterelement und Verfahren zu dessen Herstellung
CH498627A (de) Salbengrundlage und Verfahren zu deren Herstellung
AT251650B (de) Zusammengesetzte Halbleiteranordnung und Verfahren zu ihrer Herstellung
CH510330A (de) Halbleiteranordnung und Verfahren zu ihrer Herstellung
CH517376A (de) Halbleitereinrichtung und Verfahren zu deren Herstellung
AT281122B (de) Halbleitervorrichtung und Verfahren zur Herstellung derselben
CH474156A (de) Halbleitervorrichtung und Verfahren zu ihrer Herstellung
CH402189A (de) Halbleitervorrichtung und Verfahren zu ihrer Herstellung
CH499877A (de) Halbleiterbauelement und Verfahren zu dessen Herstellung
CH363416A (de) Halbleitereinrichtung und Verfahren zu deren Herstellung
AT316894B (de) Halbleitervorrichtung und Verfahren zur Herstellung derselben
CH474157A (de) Halbleitervorrichtung und Verfahren zu ihrer Herstellung
CH449782A (de) Halbleiterbauelement hoher Schaltgeschwindigkeit und Verfahren zu dessen Herstellung
CH510331A (de) Halbleitervorrichtung und Verfahren zu deren Herstellung
CH495629A (de) Halbleiteranordnung und Verfahren zu deren Herstellung
CH434486A (de) Halbleiterschaltung und Verfahren zu deren Herstellung
CH509669A (de) Halbleitervorrichtung mit mehreren auf demselben Halbleiterkörper aufgebauten Schaltungselementen und Verfahren zu deren Herstellung
CH444966A (de) Kondensator mit Halbleiterelektrode und Verfahren zu seiner Herstellung
CH426963A (de) Thermoelektrische Halbleiteranordnung und Verfahren zu ihrer Herstellung