CH495629A - Halbleiteranordnung und Verfahren zu deren Herstellung - Google Patents

Halbleiteranordnung und Verfahren zu deren Herstellung

Info

Publication number
CH495629A
CH495629A CH1514268A CH1514268A CH495629A CH 495629 A CH495629 A CH 495629A CH 1514268 A CH1514268 A CH 1514268A CH 1514268 A CH1514268 A CH 1514268A CH 495629 A CH495629 A CH 495629A
Authority
CH
Switzerland
Prior art keywords
production
semiconductor device
semiconductor
Prior art date
Application number
CH1514268A
Other languages
English (en)
Inventor
Marius Brown Dale
Ernest Engeler William
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of CH495629A publication Critical patent/CH495629A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
CH1514268A 1967-10-13 1968-10-10 Halbleiteranordnung und Verfahren zu deren Herstellung CH495629A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US67522667A 1967-10-13 1967-10-13

Publications (1)

Publication Number Publication Date
CH495629A true CH495629A (de) 1970-08-31

Family

ID=24709564

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1514268A CH495629A (de) 1967-10-13 1968-10-10 Halbleiteranordnung und Verfahren zu deren Herstellung

Country Status (8)

Country Link
JP (1) JPS4841391B1 (de)
BR (1) BR6802913D0 (de)
CH (1) CH495629A (de)
DE (2) DE1803026C3 (de)
FR (1) FR1587469A (de)
GB (1) GB1245765A (de)
NL (1) NL6814111A (de)
SE (1) SE352775B (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4036958A1 (de) * 1989-11-22 1991-05-23 Mitsubishi Electric Corp Struktur zur vermeidung von feldkonzentrationen in einem halbleiterbauelement und herstellungsverfahren dafuer
US5204545A (en) * 1989-11-22 1993-04-20 Mitsubishi Denki Kabushiki Kaisha Structure for preventing field concentration in semiconductor device and method of forming the same

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1944280B2 (de) * 1969-09-01 1971-06-09 Monolitisch integrierte festkoerperschaltung aus feldeffekttransistoren
FR2420209A1 (fr) * 1978-03-14 1979-10-12 Thomson Csf Structure de circuit integre fonctionnant a haute tension
DE3333242C2 (de) * 1982-09-13 1995-08-17 Nat Semiconductor Corp Monolithisch integrierter Halbleiterschaltkreis
US5606195A (en) * 1995-12-26 1997-02-25 Hughes Electronics High-voltage bipolar transistor utilizing field-terminated bond-pad electrodes

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL293292A (de) * 1962-06-11
US3446995A (en) * 1964-05-27 1969-05-27 Ibm Semiconductor circuits,devices and methods of improving electrical characteristics of latter
CA956038A (en) * 1964-08-20 1974-10-08 Roy W. Stiegler (Jr.) Semiconductor devices with field electrodes

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4036958A1 (de) * 1989-11-22 1991-05-23 Mitsubishi Electric Corp Struktur zur vermeidung von feldkonzentrationen in einem halbleiterbauelement und herstellungsverfahren dafuer
US5204545A (en) * 1989-11-22 1993-04-20 Mitsubishi Denki Kabushiki Kaisha Structure for preventing field concentration in semiconductor device and method of forming the same

Also Published As

Publication number Publication date
DE1803026C3 (de) 1981-09-10
GB1245765A (en) 1971-09-08
BR6802913D0 (pt) 1973-01-04
NL6814111A (de) 1969-04-15
DE6802215U (de) 1972-04-06
DE1803026B2 (de) 1973-09-20
FR1587469A (de) 1970-03-20
DE1803026A1 (de) 1971-02-11
JPS4841391B1 (de) 1973-12-06
SE352775B (de) 1973-01-08

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Legal Events

Date Code Title Description
PL Patent ceased