CH495629A - Semiconductor device and method for the production thereof - Google Patents
Semiconductor device and method for the production thereofInfo
- Publication number
- CH495629A CH495629A CH1514268A CH1514268A CH495629A CH 495629 A CH495629 A CH 495629A CH 1514268 A CH1514268 A CH 1514268A CH 1514268 A CH1514268 A CH 1514268A CH 495629 A CH495629 A CH 495629A
- Authority
- CH
- Switzerland
- Prior art keywords
- production
- semiconductor device
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US67522667A | 1967-10-13 | 1967-10-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH495629A true CH495629A (en) | 1970-08-31 |
Family
ID=24709564
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH1514268A CH495629A (en) | 1967-10-13 | 1968-10-10 | Semiconductor device and method for the production thereof |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS4841391B1 (en) |
BR (1) | BR6802913D0 (en) |
CH (1) | CH495629A (en) |
DE (2) | DE1803026C3 (en) |
FR (1) | FR1587469A (en) |
GB (1) | GB1245765A (en) |
NL (1) | NL6814111A (en) |
SE (1) | SE352775B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4036958A1 (en) * | 1989-11-22 | 1991-05-23 | Mitsubishi Electric Corp | Field concentration suppressing semiconductor structure - has insulating film on first semiconductor zone end section between it and conductive layer |
US5204545A (en) * | 1989-11-22 | 1993-04-20 | Mitsubishi Denki Kabushiki Kaisha | Structure for preventing field concentration in semiconductor device and method of forming the same |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1944280B2 (en) * | 1969-09-01 | 1971-06-09 | MONOLITICALLY INTEGRATED SOLID-STATE CIRCUIT FROM FIELD EFFECT TRANSISTORS | |
FR2420209A1 (en) * | 1978-03-14 | 1979-10-12 | Thomson Csf | HIGH VOLTAGE INTEGRATED CIRCUIT STRUCTURE |
DE3333242C2 (en) * | 1982-09-13 | 1995-08-17 | Nat Semiconductor Corp | Monolithically integrated semiconductor circuit |
US5606195A (en) * | 1995-12-26 | 1997-02-25 | Hughes Electronics | High-voltage bipolar transistor utilizing field-terminated bond-pad electrodes |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL293292A (en) * | 1962-06-11 | |||
US3446995A (en) * | 1964-05-27 | 1969-05-27 | Ibm | Semiconductor circuits,devices and methods of improving electrical characteristics of latter |
CA956038A (en) * | 1964-08-20 | 1974-10-08 | Roy W. Stiegler (Jr.) | Semiconductor devices with field electrodes |
-
1968
- 1968-09-27 GB GB4611568A patent/GB1245765A/en not_active Expired
- 1968-10-02 NL NL6814111A patent/NL6814111A/xx unknown
- 1968-10-07 BR BR20291368A patent/BR6802913D0/en unknown
- 1968-10-10 CH CH1514268A patent/CH495629A/en not_active IP Right Cessation
- 1968-10-11 FR FR1587469D patent/FR1587469A/fr not_active Expired
- 1968-10-12 JP JP7456468A patent/JPS4841391B1/ja active Pending
- 1968-10-14 DE DE19681803026 patent/DE1803026C3/en not_active Expired
- 1968-10-14 SE SE1383868A patent/SE352775B/xx unknown
- 1968-10-14 DE DE19686802215 patent/DE6802215U/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4036958A1 (en) * | 1989-11-22 | 1991-05-23 | Mitsubishi Electric Corp | Field concentration suppressing semiconductor structure - has insulating film on first semiconductor zone end section between it and conductive layer |
US5204545A (en) * | 1989-11-22 | 1993-04-20 | Mitsubishi Denki Kabushiki Kaisha | Structure for preventing field concentration in semiconductor device and method of forming the same |
Also Published As
Publication number | Publication date |
---|---|
DE1803026C3 (en) | 1981-09-10 |
DE6802215U (en) | 1972-04-06 |
JPS4841391B1 (en) | 1973-12-06 |
FR1587469A (en) | 1970-03-20 |
BR6802913D0 (en) | 1973-01-04 |
NL6814111A (en) | 1969-04-15 |
SE352775B (en) | 1973-01-08 |
DE1803026B2 (en) | 1973-09-20 |
DE1803026A1 (en) | 1971-02-11 |
GB1245765A (en) | 1971-09-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PL | Patent ceased |