CH474860A - Halbleitervorrichtung und Verfahren zu ihrer Herstellung - Google Patents

Halbleitervorrichtung und Verfahren zu ihrer Herstellung

Info

Publication number
CH474860A
CH474860A CH166168A CH166168A CH474860A CH 474860 A CH474860 A CH 474860A CH 166168 A CH166168 A CH 166168A CH 166168 A CH166168 A CH 166168A CH 474860 A CH474860 A CH 474860A
Authority
CH
Switzerland
Prior art keywords
making
same
semiconductor device
semiconductor
Prior art date
Application number
CH166168A
Other languages
English (en)
Inventor
Charles Pritchard John
Cannan Stephen
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH474860A publication Critical patent/CH474860A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
CH166168A 1967-02-07 1968-02-05 Halbleitervorrichtung und Verfahren zu ihrer Herstellung CH474860A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB571767A GB1214151A (en) 1967-02-07 1967-02-07 Improvements in and relating to semiconductor devices

Publications (1)

Publication Number Publication Date
CH474860A true CH474860A (de) 1969-06-30

Family

ID=9801315

Family Applications (1)

Application Number Title Priority Date Filing Date
CH166168A CH474860A (de) 1967-02-07 1968-02-05 Halbleitervorrichtung und Verfahren zu ihrer Herstellung

Country Status (8)

Country Link
AT (1) AT280352B (de)
BE (1) BE710354A (de)
CH (1) CH474860A (de)
DE (1) DE1639352A1 (de)
ES (1) ES350146A1 (de)
FR (1) FR1554230A (de)
GB (1) GB1214151A (de)
NL (1) NL6801503A (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3017313A1 (de) * 1980-05-06 1981-11-12 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hoher blockierspannung und verfahren zu seiner herstellung
DE3030564A1 (de) * 1980-08-13 1982-03-11 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Halbleiterbauelement fuer hohe sperrspannungen
GB8703405D0 (en) * 1987-02-13 1987-03-18 Marconi Electronic Devices Power semi-conductor device
CN113178385B (zh) * 2021-03-31 2022-12-23 青岛惠科微电子有限公司 一种芯片的制造方法、制造设备和芯片

Also Published As

Publication number Publication date
BE710354A (de) 1968-08-05
FR1554230A (de) 1969-01-17
DE1639352A1 (de) 1971-02-04
GB1214151A (en) 1970-12-02
ES350146A1 (es) 1969-04-16
AT280352B (de) 1970-04-10
NL6801503A (de) 1968-08-02

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Legal Events

Date Code Title Description
PL Patent ceased