CH528149A - Halbleiterbauelement mit heterogenem Übergang und Verfahren zu seiner Herstellung - Google Patents

Halbleiterbauelement mit heterogenem Übergang und Verfahren zu seiner Herstellung

Info

Publication number
CH528149A
CH528149A CH1295670A CH1295670A CH528149A CH 528149 A CH528149 A CH 528149A CH 1295670 A CH1295670 A CH 1295670A CH 1295670 A CH1295670 A CH 1295670A CH 528149 A CH528149 A CH 528149A
Authority
CH
Switzerland
Prior art keywords
manufacture
semiconductor device
heterogeneous transition
heterogeneous
transition
Prior art date
Application number
CH1295670A
Other languages
English (en)
Inventor
Milton Moore Robert
John Busanovich Charles
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of CH528149A publication Critical patent/CH528149A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/108—Provision of discrete insulating layers, i.e. non-genetic barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/0256—Selenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/101—Application of the selenium or tellurium to the foundation plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
CH1295670A 1969-08-29 1970-08-28 Halbleiterbauelement mit heterogenem Übergang und Verfahren zu seiner Herstellung CH528149A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US85416369A 1969-08-29 1969-08-29

Publications (1)

Publication Number Publication Date
CH528149A true CH528149A (de) 1972-09-15

Family

ID=25317906

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1295670A CH528149A (de) 1969-08-29 1970-08-28 Halbleiterbauelement mit heterogenem Übergang und Verfahren zu seiner Herstellung

Country Status (7)

Country Link
US (1) US3622712A (de)
BE (1) BE753246A (de)
CH (1) CH528149A (de)
DE (1) DE2042883A1 (de)
FR (1) FR2059740B1 (de)
GB (1) GB1315316A (de)
NL (1) NL7012787A (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3911162A (en) * 1972-04-17 1975-10-07 Xerox Corp System for vapor deposition of thin films
US3990095A (en) * 1975-09-15 1976-11-02 Rca Corporation Selenium rectifier having hexagonal polycrystalline selenium layer
US4064522A (en) * 1976-02-04 1977-12-20 Exxon Research & Engineering Co. High efficiency selenium heterojunction solar cells
US4213798A (en) * 1979-04-27 1980-07-22 Rca Corporation Tellurium schottky barrier contact for amorphous silicon solar cells
US4440803A (en) * 1979-11-01 1984-04-03 Xerox Corporation Process for preparing arsenic-selenium photoreceptors
JPS56108286A (en) * 1979-11-01 1981-08-27 Xerox Corp Method of manufacturing photoreceptor
US5179035A (en) * 1989-09-15 1993-01-12 U.S. Philips Corporation Method of fabricating two-terminal non-linear devices
US6275137B1 (en) 2000-02-08 2001-08-14 Boston Microsystems, Inc. Semiconductor piezoresistor
US9134265B2 (en) * 2009-11-05 2015-09-15 Kake Educational Institution Gas sensitive material comprising microcrystalline selenium and gas sensor using same
US9264833B2 (en) * 2013-03-14 2016-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for integrated microphone
US10651408B2 (en) * 2017-02-14 2020-05-12 International Business Machines Corporation Selenium-fullerene heterojunction solar cell
CN115101610A (zh) * 2022-07-22 2022-09-23 中国科学院化学研究所 一种硒薄膜/碲薄膜室内光伏器件及其制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL204119A (de) * 1939-01-22
US3409464A (en) * 1964-04-29 1968-11-05 Clevite Corp Piezoelectric materials
US3427410A (en) * 1964-10-08 1969-02-11 Electro Voice Electromechanical transducer
GB1115933A (en) * 1965-08-27 1968-06-06 Noranda Mines Ltd Single crystal selenium rectifier
FR1490483A (fr) * 1965-12-17 1967-08-04 Thomson Houston Comp Francaise Système de filtre électrique à bande passante étroite utilisant un cristal
US3624465A (en) * 1968-06-26 1971-11-30 Rca Corp Heterojunction semiconductor transducer having a region which is piezoelectric

Also Published As

Publication number Publication date
FR2059740A1 (de) 1971-06-04
DE2042883A1 (de) 1971-03-11
US3622712A (en) 1971-11-23
BE753246A (fr) 1970-12-16
FR2059740B1 (de) 1974-09-06
NL7012787A (de) 1971-03-02
GB1315316A (en) 1973-05-02

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Legal Events

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