BE753246A - Dispositif semi-conducteur a heterojonction - Google Patents
Dispositif semi-conducteur a heterojonctionInfo
- Publication number
- BE753246A BE753246A BE753246DA BE753246A BE 753246 A BE753246 A BE 753246A BE 753246D A BE753246D A BE 753246DA BE 753246 A BE753246 A BE 753246A
- Authority
- BE
- Belgium
- Prior art keywords
- semiconductor device
- heterojunction semiconductor
- heterojunction
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
- H01L21/108—Provision of discrete insulating layers, i.e. non-genetic barrier layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/0256—Selenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
- H01L21/101—Application of the selenium or tellurium to the foundation plate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biotechnology (AREA)
- Electrodes Of Semiconductors (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US85416369A | 1969-08-29 | 1969-08-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
BE753246A true BE753246A (fr) | 1970-12-16 |
Family
ID=25317906
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE753246D BE753246A (fr) | 1969-08-29 | 1970-07-09 | Dispositif semi-conducteur a heterojonction |
Country Status (7)
Country | Link |
---|---|
US (1) | US3622712A (de) |
BE (1) | BE753246A (de) |
CH (1) | CH528149A (de) |
DE (1) | DE2042883A1 (de) |
FR (1) | FR2059740B1 (de) |
GB (1) | GB1315316A (de) |
NL (1) | NL7012787A (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115101610A (zh) * | 2022-07-22 | 2022-09-23 | 中国科学院化学研究所 | 一种硒薄膜/碲薄膜室内光伏器件及其制备方法 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3911162A (en) * | 1972-04-17 | 1975-10-07 | Xerox Corp | System for vapor deposition of thin films |
US3990095A (en) * | 1975-09-15 | 1976-11-02 | Rca Corporation | Selenium rectifier having hexagonal polycrystalline selenium layer |
US4064522A (en) * | 1976-02-04 | 1977-12-20 | Exxon Research & Engineering Co. | High efficiency selenium heterojunction solar cells |
US4213798A (en) * | 1979-04-27 | 1980-07-22 | Rca Corporation | Tellurium schottky barrier contact for amorphous silicon solar cells |
JPS56108286A (en) * | 1979-11-01 | 1981-08-27 | Xerox Corp | Method of manufacturing photoreceptor |
US4440803A (en) * | 1979-11-01 | 1984-04-03 | Xerox Corporation | Process for preparing arsenic-selenium photoreceptors |
US5179035A (en) * | 1989-09-15 | 1993-01-12 | U.S. Philips Corporation | Method of fabricating two-terminal non-linear devices |
US6275137B1 (en) * | 2000-02-08 | 2001-08-14 | Boston Microsystems, Inc. | Semiconductor piezoresistor |
DE112010004279T5 (de) * | 2009-11-05 | 2013-02-07 | Kake Educational Institution | Gasempfindliches Material mit mikrokristallinem Selen und dieses verwendenden Gassensor |
US9264833B2 (en) | 2013-03-14 | 2016-02-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for integrated microphone |
US10651408B2 (en) * | 2017-02-14 | 2020-05-12 | International Business Machines Corporation | Selenium-fullerene heterojunction solar cell |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL204119A (de) * | 1939-01-22 | |||
US3409464A (en) * | 1964-04-29 | 1968-11-05 | Clevite Corp | Piezoelectric materials |
US3427410A (en) * | 1964-10-08 | 1969-02-11 | Electro Voice | Electromechanical transducer |
GB1115933A (en) * | 1965-08-27 | 1968-06-06 | Noranda Mines Ltd | Single crystal selenium rectifier |
FR1490483A (fr) * | 1965-12-17 | 1967-08-04 | Thomson Houston Comp Francaise | Système de filtre électrique à bande passante étroite utilisant un cristal |
US3624465A (en) * | 1968-06-26 | 1971-11-30 | Rca Corp | Heterojunction semiconductor transducer having a region which is piezoelectric |
-
1969
- 1969-08-29 US US854163A patent/US3622712A/en not_active Expired - Lifetime
-
1970
- 1970-07-09 BE BE753246D patent/BE753246A/xx unknown
- 1970-08-21 GB GB4037970A patent/GB1315316A/en not_active Expired
- 1970-08-27 FR FR7031293A patent/FR2059740B1/fr not_active Expired
- 1970-08-28 DE DE19702042883 patent/DE2042883A1/de active Pending
- 1970-08-28 CH CH1295670A patent/CH528149A/de not_active IP Right Cessation
- 1970-08-28 NL NL7012787A patent/NL7012787A/xx unknown
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115101610A (zh) * | 2022-07-22 | 2022-09-23 | 中国科学院化学研究所 | 一种硒薄膜/碲薄膜室内光伏器件及其制备方法 |
CN115101610B (zh) * | 2022-07-22 | 2024-05-28 | 中国科学院化学研究所 | 一种硒薄膜/碲薄膜室内光伏器件及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
DE2042883A1 (de) | 1971-03-11 |
CH528149A (de) | 1972-09-15 |
FR2059740B1 (de) | 1974-09-06 |
FR2059740A1 (de) | 1971-06-04 |
GB1315316A (en) | 1973-05-02 |
US3622712A (en) | 1971-11-23 |
NL7012787A (de) | 1971-03-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
NL159822B (nl) | Halfgeleiderinrichting. | |
FR1516424A (fr) | Dispositif semi-conducteur | |
ES196297Y (es) | Un dispositivo semiconductor. | |
CH507591A (de) | Halbleitervorrichtung | |
BE736743A (fr) | Dispositif semiconducteur | |
BE749078A (fr) | Dispositif semiconducteur | |
BE746705A (fr) | Dispositif semi-conducteur | |
BE751471A (fr) | Dispositif a laser a semi-conducteur | |
BE747894A (fr) | Dispositif semiconducteur | |
BE745906A (fr) | Dispositif semi-conducteur | |
BE782635A (fr) | Dispositif semi-conducteur | |
BE750189A (fr) | Dispositif semi-conducteur integre | |
BE791487A (fr) | Dispositif semiconducteur | |
BE753246A (fr) | Dispositif semi-conducteur a heterojonction | |
BE809216A (fr) | Dispositif semi-conducteur | |
CH511512A (de) | Halbleitervorrichtung | |
BE745393A (fr) | Dispositif semi-conducteur ameliore | |
BE773725A (fr) | Dispositif semiconducteur | |
BE785747A (fr) | Dispositif semiconducteur | |
BE809217A (fr) | Dispositif semi-conducteur | |
BE756061A (fr) | Dispositif semi-conducteur | |
FR2073134A5 (fr) | Dispositif semiconducteur electroluminescent | |
BE768255A (fr) | Dispositif semiconducteur | |
CH499204A (de) | Halbleitervorrichtung | |
CH513515A (de) | Halbleiteranordnung |