IT8149780A0 - Circuito d'ingresso a modulazionedi porta con resistori al silicio policristallino - Google Patents
Circuito d'ingresso a modulazionedi porta con resistori al silicio policristallinoInfo
- Publication number
- IT8149780A0 IT8149780A0 IT8149780A IT4978081A IT8149780A0 IT 8149780 A0 IT8149780 A0 IT 8149780A0 IT 8149780 A IT8149780 A IT 8149780A IT 4978081 A IT4978081 A IT 4978081A IT 8149780 A0 IT8149780 A0 IT 8149780A0
- Authority
- IT
- Italy
- Prior art keywords
- polycrystalline silicon
- input circuit
- modulation input
- gate modulation
- silicon resistors
- Prior art date
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14875—Infrared CCD or CID imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14875—Infrared CCD or CID imagers
- H01L27/14881—Infrared CCD or CID imagers of the hybrid type
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US21149380A | 1980-12-01 | 1980-12-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT8149780A0 true IT8149780A0 (it) | 1981-11-27 |
Family
ID=22787141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT8149780A IT8149780A0 (it) | 1980-12-01 | 1981-11-27 | Circuito d'ingresso a modulazionedi porta con resistori al silicio policristallino |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0065571A4 (it) |
| JP (1) | JPS57502029A (it) |
| IT (1) | IT8149780A0 (it) |
| WO (1) | WO1982001962A1 (it) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4689487A (en) * | 1984-09-03 | 1987-08-25 | Kabushiki Kaisha Toshiba | Radiographic image detection apparatus |
| NL8501542A (nl) * | 1985-05-30 | 1986-12-16 | Philips Nv | Ladingsgekoppelde inrichting. |
| US4896340A (en) * | 1985-11-01 | 1990-01-23 | Hughes Aircraft Company | Partial direct injection for signal processing system |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3660697A (en) * | 1970-02-16 | 1972-05-02 | Bell Telephone Labor Inc | Monolithic semiconductor apparatus adapted for sequential charge transfer |
| DE2501934C2 (de) * | 1974-01-25 | 1982-11-11 | Hughes Aircraft Co., Culver City, Calif. | Verfahren zum Betrieb eines ladungsgekoppelten Halbleiter-Bauelementes und ladungsgekoppeltes Halbleiter-Bauelement zur Durchführung dieses Verfahrens |
| JPS5513426B2 (it) * | 1974-06-18 | 1980-04-09 | ||
| US4110776A (en) * | 1976-09-27 | 1978-08-29 | Texas Instruments Incorporated | Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer |
| US4275407A (en) * | 1977-09-01 | 1981-06-23 | Honeywell Inc. | Durable insulating protective layer for hybrid CCD/mosaic IR detector array |
| US4297721A (en) * | 1978-11-03 | 1981-10-27 | Mostek Corporation | Extremely low current load device for integrated circuit |
| US4210465A (en) * | 1978-11-20 | 1980-07-01 | Ncr Corporation | CISFET Processing including simultaneous implantation of spaced polycrystalline silicon regions and non-memory FET channel |
| US4232221A (en) * | 1979-01-22 | 1980-11-04 | The United States Of America As Represented By The Secretary Of The Air Force | Method and apparatus for trimming IR/CCD mosaic sensors |
| US4291328A (en) * | 1979-06-15 | 1981-09-22 | Texas Instruments Incorporated | Interlevel insulator for integrated circuit with implanted resistor element in second-level polycrystalline silicon |
-
1981
- 1981-11-27 IT IT8149780A patent/IT8149780A0/it unknown
- 1981-12-01 JP JP57500225A patent/JPS57502029A/ja active Pending
- 1981-12-01 EP EP19820900203 patent/EP0065571A4/en not_active Withdrawn
- 1981-12-01 WO PCT/US1981/001587 patent/WO1982001962A1/en not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| EP0065571A1 (en) | 1982-12-01 |
| JPS57502029A (it) | 1982-11-11 |
| EP0065571A4 (en) | 1985-03-06 |
| WO1982001962A1 (en) | 1982-06-10 |
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