IT8149780A0 - Circuito d'ingresso a modulazionedi porta con resistori al silicio policristallino - Google Patents

Circuito d'ingresso a modulazionedi porta con resistori al silicio policristallino

Info

Publication number
IT8149780A0
IT8149780A0 IT8149780A IT4978081A IT8149780A0 IT 8149780 A0 IT8149780 A0 IT 8149780A0 IT 8149780 A IT8149780 A IT 8149780A IT 4978081 A IT4978081 A IT 4978081A IT 8149780 A0 IT8149780 A0 IT 8149780A0
Authority
IT
Italy
Prior art keywords
polycrystalline silicon
input circuit
modulation input
gate modulation
silicon resistors
Prior art date
Application number
IT8149780A
Other languages
English (en)
Inventor
William V Backensto
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of IT8149780A0 publication Critical patent/IT8149780A0/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/157—CCD or CID infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/157—CCD or CID infrared image sensors
    • H10F39/1575—CCD or CID infrared image sensors of the hybrid type
IT8149780A 1980-12-01 1981-11-27 Circuito d'ingresso a modulazionedi porta con resistori al silicio policristallino IT8149780A0 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US21149380A 1980-12-01 1980-12-01

Publications (1)

Publication Number Publication Date
IT8149780A0 true IT8149780A0 (it) 1981-11-27

Family

ID=22787141

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8149780A IT8149780A0 (it) 1980-12-01 1981-11-27 Circuito d'ingresso a modulazionedi porta con resistori al silicio policristallino

Country Status (4)

Country Link
EP (1) EP0065571A4 (it)
JP (1) JPS57502029A (it)
IT (1) IT8149780A0 (it)
WO (1) WO1982001962A1 (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4689487A (en) * 1984-09-03 1987-08-25 Kabushiki Kaisha Toshiba Radiographic image detection apparatus
NL8501542A (nl) * 1985-05-30 1986-12-16 Philips Nv Ladingsgekoppelde inrichting.
US4896340A (en) * 1985-11-01 1990-01-23 Hughes Aircraft Company Partial direct injection for signal processing system

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660697A (en) * 1970-02-16 1972-05-02 Bell Telephone Labor Inc Monolithic semiconductor apparatus adapted for sequential charge transfer
DE2501934C2 (de) * 1974-01-25 1982-11-11 Hughes Aircraft Co., Culver City, Calif. Verfahren zum Betrieb eines ladungsgekoppelten Halbleiter-Bauelementes und ladungsgekoppeltes Halbleiter-Bauelement zur Durchführung dieses Verfahrens
JPS5513426B2 (it) * 1974-06-18 1980-04-09
US4110776A (en) * 1976-09-27 1978-08-29 Texas Instruments Incorporated Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer
US4275407A (en) * 1977-09-01 1981-06-23 Honeywell Inc. Durable insulating protective layer for hybrid CCD/mosaic IR detector array
US4297721A (en) * 1978-11-03 1981-10-27 Mostek Corporation Extremely low current load device for integrated circuit
US4210465A (en) * 1978-11-20 1980-07-01 Ncr Corporation CISFET Processing including simultaneous implantation of spaced polycrystalline silicon regions and non-memory FET channel
US4232221A (en) * 1979-01-22 1980-11-04 The United States Of America As Represented By The Secretary Of The Air Force Method and apparatus for trimming IR/CCD mosaic sensors
US4291328A (en) * 1979-06-15 1981-09-22 Texas Instruments Incorporated Interlevel insulator for integrated circuit with implanted resistor element in second-level polycrystalline silicon

Also Published As

Publication number Publication date
JPS57502029A (it) 1982-11-11
EP0065571A4 (en) 1985-03-06
EP0065571A1 (en) 1982-12-01
WO1982001962A1 (en) 1982-06-10

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