GB2025147B - Silicon resistor having a very low temperature coefficient - Google Patents

Silicon resistor having a very low temperature coefficient

Info

Publication number
GB2025147B
GB2025147B GB7923044A GB7923044A GB2025147B GB 2025147 B GB2025147 B GB 2025147B GB 7923044 A GB7923044 A GB 7923044A GB 7923044 A GB7923044 A GB 7923044A GB 2025147 B GB2025147 B GB 2025147B
Authority
GB
United Kingdom
Prior art keywords
low temperature
temperature coefficient
silicon resistor
resistor
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7923044A
Other versions
GB2025147A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of GB2025147A publication Critical patent/GB2025147A/en
Application granted granted Critical
Publication of GB2025147B publication Critical patent/GB2025147B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/06—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material including means to minimise changes in resistance with changes in temperature
GB7923044A 1978-07-04 1979-07-03 Silicon resistor having a very low temperature coefficient Expired GB2025147B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7819932A FR2430653A1 (en) 1978-07-04 1978-07-04 SILICON RESISTANCE AT VERY LOW TEMPERATURE COEFFICIENT

Publications (2)

Publication Number Publication Date
GB2025147A GB2025147A (en) 1980-01-16
GB2025147B true GB2025147B (en) 1982-09-22

Family

ID=9210314

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7923044A Expired GB2025147B (en) 1978-07-04 1979-07-03 Silicon resistor having a very low temperature coefficient

Country Status (4)

Country Link
US (1) US4329774A (en)
DE (1) DE2927003C2 (en)
FR (1) FR2430653A1 (en)
GB (1) GB2025147B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5240511A (en) * 1987-02-20 1993-08-31 National Semiconductor Corporation Lightly doped polycrystalline silicon resistor having a non-negative temperature coefficient
DE3736144A1 (en) * 1987-10-26 1989-05-03 Telefunken Electronic Gmbh Method for fabricating a resistor for use as bias resistor for semiconductor light-emitting diodes
US5538915A (en) * 1992-06-05 1996-07-23 The Regents Of The University Of California Process for forming synapses in neural networks and resistor therefor
US6211769B1 (en) * 1997-12-22 2001-04-03 Texas Instruments Incorporated System to minimize the temperature coefficient of resistance of passive resistors in an integrated circuit process flow
DE10012866A1 (en) * 2000-03-16 2001-09-27 Siemens Ag Resistor made of semiconductor material
JP4213329B2 (en) * 2000-06-15 2009-01-21 三菱電機株式会社 Current limiting device
DE10053957C2 (en) * 2000-10-31 2002-10-31 Infineon Technologies Ag Temperature compensated semiconductor resistance and its use
FR2879841B1 (en) * 2004-12-22 2008-10-24 Thales Sa POWER SEMICONDUCTOR LASER WITH LOW DIVERGENCE AND ASTIGMATISM
RU2445721C1 (en) * 2010-12-10 2012-03-20 Федеральное государственное унитарное предприятие "Всероссийский электротехнический институт им. В.И. Ленина" Method of making semiconductor power resistor
RU2531381C1 (en) * 2013-10-18 2014-10-20 Федеральное государственное унитарное предприятие "Всероссийский электротехнический институт имени В.И. Ленина" High-power semiconductor resistor and method of making said resistor

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2860218A (en) * 1954-02-04 1958-11-11 Gen Electric Germanium current controlling devices
US3248677A (en) * 1961-10-27 1966-04-26 Ibm Temperature compensated semiconductor resistor
US3337793A (en) * 1964-11-02 1967-08-22 James F Gibbons Voltage regulator utilizing gold doped silicon
US3473976A (en) * 1966-03-31 1969-10-21 Ibm Carrier lifetime killer doping process for semiconductor structures and the product formed thereby
US3484658A (en) * 1966-08-25 1969-12-16 Nippon Telegraph & Telephone Temperature compensated semiconductor resistor
US3491325A (en) * 1967-02-15 1970-01-20 Ibm Temperature compensation for semiconductor devices
US3611062A (en) * 1968-04-17 1971-10-05 Ibm Passive elements for solid-state integrated circuits
US3683306A (en) * 1968-11-19 1972-08-08 Philips Corp Temperature compensated semiconductor resistor containing neutral inactive impurities
US3711325A (en) * 1968-12-13 1973-01-16 Texas Instruments Inc Activation process for electroless nickel plating
US3963523A (en) * 1973-04-26 1976-06-15 Matsushita Electronics Corporation Method of manufacturing semiconductor devices

Also Published As

Publication number Publication date
FR2430653B1 (en) 1981-11-27
US4329774A (en) 1982-05-18
DE2927003A1 (en) 1980-01-17
DE2927003C2 (en) 1983-11-10
GB2025147A (en) 1980-01-16
FR2430653A1 (en) 1980-02-01

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19920703