JPS5238398B2 - - Google Patents
Info
- Publication number
- JPS5238398B2 JPS5238398B2 JP50009908A JP990875A JPS5238398B2 JP S5238398 B2 JPS5238398 B2 JP S5238398B2 JP 50009908 A JP50009908 A JP 50009908A JP 990875 A JP990875 A JP 990875A JP S5238398 B2 JPS5238398 B2 JP S5238398B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76808—Input structures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14875—Infrared CCD or CID imagers
- H01L27/14881—Infrared CCD or CID imagers of the hybrid type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US43658774A | 1974-01-25 | 1974-01-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS50105392A JPS50105392A (ja) | 1975-08-20 |
JPS5238398B2 true JPS5238398B2 (ja) | 1977-09-28 |
Family
ID=23733026
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50009908A Expired JPS5238398B2 (ja) | 1974-01-25 | 1975-01-24 |
Country Status (5)
Country | Link |
---|---|
US (1) | US4093872A (ja) |
JP (1) | JPS5238398B2 (ja) |
DE (1) | DE2501934C2 (ja) |
GB (1) | GB1496081A (ja) |
NL (1) | NL172705C (ja) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL180157C (nl) * | 1975-06-09 | 1987-01-02 | Philips Nv | Halfgeleider beeldopneeminrichting. |
JPS528788A (en) * | 1975-07-10 | 1977-01-22 | Nec Corp | Charge transfer exposer |
US4360791A (en) * | 1977-01-10 | 1982-11-23 | Texas Instruments Incorporated | Frequency converting filter |
DE2721039C2 (de) * | 1977-05-10 | 1986-10-23 | Siemens AG, 1000 Berlin und 8000 München | Digitale Ladungsverschiebeanordnung |
US4197469A (en) * | 1978-05-25 | 1980-04-08 | Rockwell International Corporation | Capacitively coupled array of photodetectors |
US4276099A (en) * | 1978-10-11 | 1981-06-30 | The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland | Fabrication of infra-red charge coupled devices |
JPS56103479A (en) * | 1980-01-21 | 1981-08-18 | Fujitsu Ltd | Electric charge transferring device |
JPS56104582A (en) * | 1980-01-25 | 1981-08-20 | Toshiba Corp | Solid image pickup device |
US4321614A (en) * | 1980-03-12 | 1982-03-23 | Westinghouse Electric Corp. | Radiant energy sensor with blooming control |
JPS56164682A (en) * | 1980-05-22 | 1981-12-17 | Matsushita Electronics Corp | Solidstate image pick-up device |
US4409483A (en) * | 1980-10-07 | 1983-10-11 | Westinghouse Electric Corp. | Radiant energy differential sensor system |
IT8149780A0 (it) * | 1980-12-01 | 1981-11-27 | Hughes Aircraft Co | Circuito d'ingresso a modulazionedi porta con resistori al silicio policristallino |
FR2508234A1 (fr) * | 1981-06-23 | 1982-12-24 | Thomson Csf | Ensemble detecteur photonique, lecteur a transfert de charges adapte et cible de prise de vues utilisant un tel ensemble |
JPS58103172A (ja) * | 1981-12-16 | 1983-06-20 | Nec Corp | 電荷転送装置 |
US4488165A (en) * | 1981-12-22 | 1984-12-11 | Levine Michael A | Extrinsic infrared detector with a charge reset function |
DE3200853A1 (de) * | 1982-01-14 | 1983-07-21 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Halbleiteranordnung mit einer bildaufnahmeeinheit und mit einer ausleseeinheit sowie verfahren zu ihrer herstellung |
JPS58221562A (ja) * | 1982-06-18 | 1983-12-23 | Fuji Xerox Co Ltd | 原稿読取装置 |
FR2529388B1 (fr) * | 1982-06-25 | 1985-06-07 | Thomson Csf | Dispositif photosensible assurant un effet anti-eblouissement |
JPS5994871A (ja) * | 1982-11-22 | 1984-05-31 | Nec Corp | 電荷転送装置 |
JPS59132669A (ja) * | 1983-01-20 | 1984-07-30 | Sony Corp | 電荷転送装置 |
FR2551919B1 (fr) * | 1983-09-13 | 1986-10-10 | Thomson Csf | Dispositif photosensible a transfert de ligne |
FR2558670B1 (fr) * | 1984-01-20 | 1986-11-21 | Thomson Csf | Perfectionnement aux dispositifs photosensibles a l'etat solide |
JPS61131854U (ja) * | 1985-02-06 | 1986-08-18 | ||
NL8500863A (nl) * | 1985-03-25 | 1986-10-16 | Philips Nv | Ladingsoverdrachtinrichting. |
US4725748A (en) * | 1985-05-06 | 1988-02-16 | Tektronix, Inc. | High speed data acquisition utilizing multiple charge transfer delay lines |
GB2181011B (en) * | 1985-09-20 | 1989-09-06 | Philips Electronic Associated | Imaging devices comprising photodetector elements |
US4896340A (en) * | 1985-11-01 | 1990-01-23 | Hughes Aircraft Company | Partial direct injection for signal processing system |
FR2591409B1 (fr) * | 1985-12-10 | 1988-08-19 | Telecommunications Sa | Camera thermique a balayage parallele |
US4812668A (en) * | 1986-04-17 | 1989-03-14 | Honeywell Inc. | Multiplexer elements for photovoltaic detectors |
US4951302A (en) * | 1988-06-30 | 1990-08-21 | Tektronix, Inc. | Charge-coupled device shift register |
JP2604905B2 (ja) * | 1990-11-29 | 1997-04-30 | 宇宙開発事業団 | 固体撮像装置 |
US6366322B1 (en) | 1991-04-15 | 2002-04-02 | Lg Semicon Co., Ltd. | Horizontal charge coupled device of CCD image sensor |
US5471515A (en) * | 1994-01-28 | 1995-11-28 | California Institute Of Technology | Active pixel sensor with intra-pixel charge transfer |
US6486503B1 (en) | 1994-01-28 | 2002-11-26 | California Institute Of Technology | Active pixel sensor array with electronic shuttering |
US6021172A (en) | 1994-01-28 | 2000-02-01 | California Institute Of Technology | Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter |
WO1997028558A2 (en) * | 1996-01-22 | 1997-08-07 | California Institute Of Technology | Active pixel sensor array with electronic shuttering |
JP2001521651A (ja) | 1996-05-14 | 2001-11-06 | サヤ、マイケル | 制御信号を発生するための方法及び装置 |
US5801681A (en) * | 1996-06-24 | 1998-09-01 | Sayag; Michel | Method and apparatus for generating a control signal |
US7199409B2 (en) * | 2004-08-26 | 2007-04-03 | Massachusetts Institute Of Technology | Device for subtracting or adding charge in a charge-coupled device |
JP2009038520A (ja) * | 2007-07-31 | 2009-02-19 | Sanyo Electric Co Ltd | 撮像装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU461729B2 (en) * | 1971-01-14 | 1975-06-05 | Rca Corporation | Charge coupled circuits |
US3723642A (en) * | 1971-05-28 | 1973-03-27 | Hughes Aircraft Co | Thermal imaging system |
US3796932A (en) * | 1971-06-28 | 1974-03-12 | Bell Telephone Labor Inc | Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel |
US3789267A (en) * | 1971-06-28 | 1974-01-29 | Bell Telephone Labor Inc | Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel |
US3771149A (en) * | 1971-12-30 | 1973-11-06 | Texas Instruments Inc | Charge coupled optical scanner |
US3801883A (en) * | 1972-06-02 | 1974-04-02 | Gen Electric | Surface charge signal correlator |
-
1975
- 1975-01-18 DE DE2501934A patent/DE2501934C2/de not_active Expired
- 1975-01-24 GB GB3205/75A patent/GB1496081A/en not_active Expired
- 1975-01-24 JP JP50009908A patent/JPS5238398B2/ja not_active Expired
- 1975-01-24 NL NLAANVRAGE7500888,A patent/NL172705C/xx not_active IP Right Cessation
- 1975-09-02 US US05/609,774 patent/US4093872A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
NL7500888A (nl) | 1975-07-29 |
NL172705C (nl) | 1983-10-03 |
JPS50105392A (ja) | 1975-08-20 |
NL172705B (nl) | 1983-05-02 |
DE2501934C2 (de) | 1982-11-11 |
DE2501934A1 (de) | 1975-08-14 |
GB1496081A (en) | 1977-12-21 |
US4093872A (en) | 1978-06-06 |