NL170902C - Halfgeleiderinrichting, in het bijzonder monolithische geintegreerde halfgeleiderschakeling. - Google Patents

Halfgeleiderinrichting, in het bijzonder monolithische geintegreerde halfgeleiderschakeling.

Info

Publication number
NL170902C
NL170902C NLAANVRAGE7010204,A NL7010204A NL170902C NL 170902 C NL170902 C NL 170902C NL 7010204 A NL7010204 A NL 7010204A NL 170902 C NL170902 C NL 170902C
Authority
NL
Netherlands
Prior art keywords
monolithically integrated
semiconductor device
particular monolithically
circuit
semiconductor circuit
Prior art date
Application number
NLAANVRAGE7010204,A
Other languages
English (en)
Dutch (nl)
Other versions
NL7010204A (es
NL170902B (nl
Inventor
Else Dr Kooi
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NLAANVRAGE7010204,A priority Critical patent/NL170902C/xx
Application filed by Philips Nv filed Critical Philips Nv
Priority to GB3184571A priority patent/GB1353997A/en
Priority to GB1028374A priority patent/GB1364677A/en
Priority to SE880571A priority patent/SE368480B/xx
Priority to GB3183971A priority patent/GB1364676A/en
Priority to CH1001371A priority patent/CH542517A/de
Priority to GB3184471A priority patent/GB1360243A/en
Priority to CH1000871A priority patent/CH535496A/de
Priority to CA117580A priority patent/CA926029A/en
Priority to CH1000771A priority patent/CH533364A/de
Priority to CA117,581A priority patent/CA1102012A/en
Priority to SE880471A priority patent/SE368479B/xx
Priority to AT594371A priority patent/AT351596B/de
Priority to BE769734A priority patent/BE769734A/xx
Priority to ES393040A priority patent/ES393040A1/es
Priority to BE769729A priority patent/BE769729A/xx
Priority to DE19712133981 priority patent/DE2133981C3/de
Priority to DE2133976A priority patent/DE2133976C3/de
Priority to BE769735A priority patent/BE769735A/xx
Priority to ES393035A priority patent/ES393035A1/es
Priority to DE19712133982 priority patent/DE2133982C2/de
Priority to ES393041A priority patent/ES393041A1/es
Priority to FR7125293A priority patent/FR2098319B1/fr
Priority to FR7125299A priority patent/FR2098325B1/fr
Priority to FR7125298A priority patent/FR2098324B1/fr
Priority to JP5073271A priority patent/JPS5010101B1/ja
Priority to JP46050730A priority patent/JPS4945629B1/ja
Priority to JP5073171A priority patent/JPS517550B1/ja
Priority to BR4395/71A priority patent/BR7104395D0/pt
Publication of NL7010204A publication Critical patent/NL7010204A/xx
Priority to HK594/76*UA priority patent/HK59476A/xx
Priority to HK59076A priority patent/HK59076A/xx
Priority to HK593/72*UA priority patent/HK59376A/xx
Priority to HK58576A priority patent/HK58576A/xx
Publication of NL170902B publication Critical patent/NL170902B/xx
Application granted granted Critical
Publication of NL170902C publication Critical patent/NL170902C/xx
Priority to US07/021,563 priority patent/US4903109A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0635—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors and diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
    • H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0658—Vertical bipolar transistor in combination with resistors or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Element Separation (AREA)
NLAANVRAGE7010204,A 1970-07-10 1970-07-10 Halfgeleiderinrichting, in het bijzonder monolithische geintegreerde halfgeleiderschakeling. NL170902C (nl)

Priority Applications (34)

Application Number Priority Date Filing Date Title
NLAANVRAGE7010204,A NL170902C (nl) 1970-07-10 1970-07-10 Halfgeleiderinrichting, in het bijzonder monolithische geintegreerde halfgeleiderschakeling.
GB1028374A GB1364677A (en) 1970-07-10 1971-07-07 Semiconductor devices and methods of making semiconductor devices
SE880571A SE368480B (es) 1970-07-10 1971-07-07
GB3183971A GB1364676A (en) 1970-07-10 1971-07-07 Semiconductor integrated device
GB3184571A GB1353997A (en) 1970-07-10 1971-07-07 Semiconductor integrated devices
GB3184471A GB1360243A (en) 1970-07-10 1971-07-07 Semiconductor devices
CH1000871A CH535496A (de) 1970-07-10 1971-07-07 Monolithische, integrierte Schaltung
CA117580A CA926029A (en) 1970-07-10 1971-07-07 Semiconductor device having a transistor
CH1000771A CH533364A (de) 1970-07-10 1971-07-07 Monolitische, intergrierte Schaltung
CA117,581A CA1102012A (en) 1970-07-10 1971-07-07 Semiconductor device, in particular integrated monolithic circuit, and method of manufacturing same
SE880471A SE368479B (es) 1970-07-10 1971-07-07
CH1001371A CH542517A (de) 1970-07-10 1971-07-07 Halbleitervorrichtung mit einem Transistor und Verfahren zur Herstellung der Halbleitervorrichtung
DE2133976A DE2133976C3 (de) 1970-07-10 1971-07-08 Monolithisch integrierte Halbleiteranordnung
ES393040A ES393040A1 (es) 1970-07-10 1971-07-08 Un dispositivo semiconductor.
BE769729A BE769729A (fr) 1970-07-10 1971-07-08 Dispositif semiconducteur, en particulier un circuit integre monolithique et procede de fabrication de ce dispositif
DE19712133981 DE2133981C3 (de) 1970-07-10 1971-07-08 Halbleiterbauelement mit einem Halbleiterkörper mit einem Transistor und Verfahren zu seiner Herstellung
AT594371A AT351596B (de) 1970-07-10 1971-07-08 Halbleiteranordnung, insbesondere monolithische integrierte schaltung mit von zum teil durch eine versenkte isolierschicht gebildete isolierzonen umgebenen inseln
BE769735A BE769735A (fr) 1970-07-10 1971-07-08 Dispositif semiconducteur, en particulier circuit monolithique integre,et procede de fabrication de ce dispositif
ES393035A ES393035A1 (es) 1970-07-10 1971-07-08 Un dispositivo semiconductor.
DE19712133982 DE2133982C2 (de) 1970-07-10 1971-07-08 Integriertes Halbleiterbauelement mit einer von einer vergrabenen Schicht gebildeten leitenden Verbindung
ES393041A ES393041A1 (es) 1970-07-10 1971-07-08 Un dispositivo semiconductor.
BE769734A BE769734A (fr) 1970-07-10 1971-07-08 Dispositif semiconducteur comportant un transistor
FR7125298A FR2098324B1 (es) 1970-07-10 1971-07-09
FR7125299A FR2098325B1 (es) 1970-07-10 1971-07-09
FR7125293A FR2098319B1 (es) 1970-07-10 1971-07-09
JP46050730A JPS4945629B1 (es) 1970-07-10 1971-07-10
JP5073171A JPS517550B1 (es) 1970-07-10 1971-07-10
JP5073271A JPS5010101B1 (es) 1970-07-10 1971-07-10
BR4395/71A BR7104395D0 (pt) 1970-07-10 1971-07-12 Dispositivo semicondutor mais especialmente um circuito integrado monolitico
HK594/76*UA HK59476A (en) 1970-07-10 1976-09-23 Semiconductor devices and methods of making semiconductor devices
HK59076A HK59076A (en) 1970-07-10 1976-09-23 Improvements in and relating to semiconductor devices
HK593/72*UA HK59376A (en) 1970-07-10 1976-09-23 Semiconductor integrated device
HK58576A HK58576A (en) 1970-07-10 1976-09-23 Improvements in and relating to semiconductor integrated devices
US07/021,563 US4903109A (en) 1970-07-10 1987-03-02 Semiconductor devices having local oxide isolation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7010204,A NL170902C (nl) 1970-07-10 1970-07-10 Halfgeleiderinrichting, in het bijzonder monolithische geintegreerde halfgeleiderschakeling.

Publications (3)

Publication Number Publication Date
NL7010204A NL7010204A (es) 1972-01-12
NL170902B NL170902B (nl) 1982-08-02
NL170902C true NL170902C (nl) 1983-01-03

Family

ID=19810544

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7010204,A NL170902C (nl) 1970-07-10 1970-07-10 Halfgeleiderinrichting, in het bijzonder monolithische geintegreerde halfgeleiderschakeling.

Country Status (11)

Country Link
US (1) US4903109A (es)
JP (1) JPS4945629B1 (es)
BE (1) BE769729A (es)
BR (1) BR7104395D0 (es)
CH (1) CH535496A (es)
DE (1) DE2133976C3 (es)
ES (1) ES393035A1 (es)
FR (1) FR2098319B1 (es)
GB (1) GB1364676A (es)
HK (2) HK59376A (es)
NL (1) NL170902C (es)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure
IT979178B (it) * 1972-05-11 1974-09-30 Ibm Resistore per dispositivi a circuito integrato
DE2235865A1 (de) * 1972-07-21 1974-01-31 Licentia Gmbh Halbleiteranordnung aus einer vielzahl von in einem gemeinsamen halbleiterkoerper untergebrachten halbleiterbauelementen
JPS598065B2 (ja) * 1976-01-30 1984-02-22 松下電子工業株式会社 Ｍｏｓ集積回路の製造方法
DE2708639A1 (de) * 1977-02-28 1978-08-31 Siemens Ag Transistoranordnung auf einem halbleiterplaettchen
FR2480036A1 (fr) * 1980-04-04 1981-10-09 Thomson Csf Structure de dispositif a semi-conducteur a anneau de garde et a fonctionnement unipolaire
JPS5931052A (ja) * 1982-08-13 1984-02-18 Hitachi Ltd 半導体集積回路装置の製造方法
US5290396A (en) * 1991-06-06 1994-03-01 Lsi Logic Corporation Trench planarization techniques
US5413966A (en) * 1990-12-20 1995-05-09 Lsi Logic Corporation Shallow trench etch
US5252503A (en) * 1991-06-06 1993-10-12 Lsi Logic Corporation Techniques for forming isolation structures
US5225358A (en) * 1991-06-06 1993-07-06 Lsi Logic Corporation Method of forming late isolation with polishing
US5248625A (en) * 1991-06-06 1993-09-28 Lsi Logic Corporation Techniques for forming isolation structures
DE69507924T2 (de) * 1994-04-15 1999-09-16 Koninklijke Philips Electronics N.V., Eindhoven Herstellungsverfahren für eine anordnung, wobei ein längsträger mit leiterbahnen zur elektrischen kontaktierung eines halbleiterelements versehen ist
US5783470A (en) * 1995-12-14 1998-07-21 Lsi Logic Corporation Method of making CMOS dynamic random-access memory structures and the like
KR100456691B1 (ko) * 2002-03-05 2004-11-10 삼성전자주식회사 이중격리구조를 갖는 반도체 소자 및 그 제조방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1077851A (en) * 1962-05-28 1967-08-02 Ultra Electronics Ltd Transistors
US3254277A (en) * 1963-02-27 1966-05-31 United Aircraft Corp Integrated circuit with component defining groove
US3386865A (en) * 1965-05-10 1968-06-04 Ibm Process of making planar semiconductor devices isolated by encapsulating oxide filled channels
US3442011A (en) * 1965-06-30 1969-05-06 Texas Instruments Inc Method for isolating individual devices in an integrated circuit monolithic bar
US3615929A (en) * 1965-07-08 1971-10-26 Texas Instruments Inc Method of forming epitaxial region of predetermined thickness and article of manufacture
NL153374B (nl) * 1966-10-05 1977-05-16 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting voorzien van een oxydelaag en halfgeleiderinrichting vervaardigd volgens de werkwijze.
US3481801A (en) * 1966-10-10 1969-12-02 Frances Hugle Isolation technique for integrated circuits
US3534234A (en) * 1966-12-15 1970-10-13 Texas Instruments Inc Modified planar process for making semiconductor devices having ultrafine mesa type geometry
US3653988A (en) * 1968-02-05 1972-04-04 Bell Telephone Labor Inc Method of forming monolithic semiconductor integrated circuit devices
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure

Also Published As

Publication number Publication date
US4903109A (en) 1990-02-20
HK59476A (en) 1976-10-01
HK59376A (en) 1976-10-01
NL7010204A (es) 1972-01-12
FR2098319B1 (es) 1976-05-28
DE2133976A1 (de) 1972-01-13
CH535496A (de) 1973-03-31
FR2098319A1 (es) 1972-03-10
DE2133976C3 (de) 1981-07-23
NL170902B (nl) 1982-08-02
DE2133976B2 (de) 1979-07-12
BE769729A (fr) 1972-01-10
BR7104395D0 (pt) 1973-04-05
JPS4945629B1 (es) 1974-12-05
GB1364676A (en) 1974-08-29
ES393035A1 (es) 1973-08-16

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